Abstract: Radar vehicle tracking is described. One or more embodiments include a device to receive a first determined distance between a first radar transceiver and a vehicle, the first distance determined by the first radar transceiver operating in a first mode, receive a second determined distance between a second radar transceiver and the vehicle, the second distance determined by the second radar transceiver operating in the first mode, receive a first determined distance ellipse between the first radar transceiver and the vehicle, the first distance ellipse determined by the first radar transceiver operating in a second mode, receive a second determined distance ellipse between the second radar transceiver and the vehicle, the second distance ellipse determined by the second radar transceiver operating in the second mode, and determine at least one location estimate of the vehicle based on the first and second determined distances and first and second determined distance ellipses.

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

Abstract: Provided are a method for screening for nanobodies and a corresponding system. The method uses polymerase chain reactions and cDNA 5? end rapid amplification technology to screen for and obtain nanobodies. The experiment cycle requires only approximately 21 days.

Abstract: The present application discloses a method and apparatus for obtaining a semantic label of a digital image. An implementation of the method includes: obtaining the digital image; looking up a semantic label model corresponding to the digital image, the semantic label model being used for representing correlation between digital images and semantic labels, and a semantic label being used for literally describing a digital image; and introducing the digital image into the semantic label model to obtain full-image recognition information and local recognition information corresponding to the digital image, and combining the full-image recognition information and the local recognition information to form a semantic label, the full-image recognition information being a summarized description of the digital image, and the local recognition information being a detailed description of the digital image.

Abstract: The present invention provides a device and method for degating of an aluminum wheel blank by laser cutting, and the device comprises members including a lower lifting frame movable long beam, a middle lifting frame inner side oblique beam, a middle lifting frame pin shaft, a rubber supporting cushion, an upper lifting frame long fixed beam, a middle lifting frame outer side oblique beam, a first stroke limiting frame, a first stroke limiting wheel, a second stroke limiting frame, a second stroke limiting wheel, piston firm retaining rings, frame-shaped guide plates, directional sliding blocks, grating positioning devices, a wheel blank member, a roller way, a lower rack fixed frame, a lower gate taking device fixed frame, a laser cutting head, an eccentric turning wheel, high-temperature-resistant resin clamping gaskets, clamping blocks, rack vertical corner frames, clamping hydraulic cylinder pistons, horizontal clamping hydraulic cylinders, a movable plate and the like.

Abstract: Methods, systems, and computer program products for detection of an arbitrarily-shaped source of an abnormal event via use of a hierarchical reconstruction method are provided herein. A computer-implemented method includes detecting an abnormal event based on analysis of sensor data, wherein said analysis of the sensor data comprises comparing the sensor data to a user-defined threshold; generating a query based on the detected abnormal event; processing the query against one or more given data repositories; executing an inverse model using an output generated in relation to said processing to identify a source of the detected abnormal event, wherein the source to comprises an arbitrary shape; and outputting the identified source of the detected abnormal event.

Abstract: The present disclosure relates to a method and terminal device for processing an image. The method includes: acquiring face information from a template image, if receiving a request for processing an image containing a face; and applying a photo makeover on the face according to the face information acquired from the template image. By acquiring face information from a template image and automatically applying a photo makeover on the face according to the face information acquired from the template image, manual setting for makeover parameters will be avoided and the efficiency will be improved.

Abstract: The present invention provides a device and method for laser cutting of aluminum alloy wheel blank burrs. The device includes a wheel hub lifting and locking mechanism and one or more groups of lasers mounted to a moving mechanism, and the moving mechanism comprises vertical guide columns (8) and horizontal guide columns (10) mounted to the vertical guide columns (8). During use, the device of the present invention can realize the function of online cutting of wheel burrs, thereby improving work efficiency and reducing manual labor, and the device has the characteristics of high cutting precision, rounded and burr-free cutting parts, stable performances, high degree of automation and the like.

Abstract: A blower, including a scroll casing, a fan impeller, a motor, and a pressure measuring connector. The scroll casing includes a chamber, an air inlet, and an air outlet. The air inlet and the air outlet communicate with the chamber. The motor is disposed on the scroll casing. A drive end of the motor is inserted into the chamber and is connected to the fan impeller. The pressure measuring connector is disposed on the scroll casing. A channel is disposed in the pressure measuring connection, and the channel communicates with the chamber. The channel includes a first subchannel and a second subchannel. The first subchannel communicates with the second subchannel, and an inner diameter of the first subchannel is larger than an inner diameter of the second subchannel.

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

Abstract: In certain embodiments, a Service Deployment Infrastructure (SDI) request engine is disclosed. The SDI request engine performs the tracking, management and provisioning of services subscribed to by customers of the cloud infrastructure system. The SDI request engine is deployed to process large volumes of provisioning requests and deliver time critical applications for customers. The SDI request engine translates each request into a list of tasks of various sizes based on the requirement and configuration of the request. In some embodiments, the SDI request engine imposes control and management on both request and task levels in order to execute, rollback, retry or fail a task automatically and accurately.

Abstract: The disclosure provides a method and a terminal device for shooting control. The method includes: obtaining a moving speed of an object on a shooting screen of the terminal device; determining whether the moving speed is within a preset speed range; and focusing on the object if the moving speed is within the preset speed range.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states is provided. The film is prepared by e-beam deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a low deposition rate. In an exemplary embodiment, the film is amorphous silicon having a density greater than about 2.18 g/cm3 and a hydrogen content of less than about 0.1%, prepared by e-beam deposition at a rate of about 0.1 nm/sec on a substrate having Tsub=400° C. under a vacuum pressure of 1×10?8 Torr.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: A folding stool includes a pair of table surface sections, a pair of leg sections, and a pivot member. The pair of table surface sections is connected to each other by the pivot member, and the pair of leg sections supports the pair of table surface sections. Each leg section includes a bottom and a top, and the top resists against the table surface section. The folding stool is made of aluminum and magnesium alloy, further includes a plurality of first connecting members and a plurality of second connecting members. Each table surface section includes a first connecting hole and a second connecting hole, and each leg section includes a third connecting hole and a fourth connecting hole. The first connecting member is connected between first connecting hole and the third connecting hole, and the second connecting member is connected between second connecting hole and the fourth connecting hole.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

Abstract: This invention relates to a method for preparing a polycarboxylate superplasticizer by graft copolymerization of fatty acid vinyl ester onto acrylate polymer. In this invention, a type of polycarboxylate superplasticizer by graft copolymerization of fatty acid vinyl ester onto acrylate polymer was synthesized by the processes of polymerization-grafting-alcoholysis-hydrolysis with acrylate and fatty acid vinyl ester as main reactants. In the first polymerization step, the polyacrylate was synthesized by using acrylate as monomer and a certain amount of initiator and molecular weight regulator. In the second graft copolymerization step, the graft polymer with polyacrylate as main chain and poly(fatty acid vinyl ester) as side chain was synthesized by graft copolymerization between polyacrylate and fatty acid vinyl ester. The final polycarboxylate superplasticizer product with polyacrylic acid as main chain and polyvinyl alcohol as side chain was obtained by subsequent alcoholysis and hydrolysis steps.

Abstract: A system and method are presented for providing generic single sign-on in an electronic device. Information is received that identifies one or more applications and associated identity authenticators and a whitelist of the identified applications and authenticators is created. A request for an access token is received from a requesting application. If the requesting application is listed in the whitelist, an authenticator associated with the requesting application is determined and a request for an access token is sent to the associated authenticator. In response to the request, an access token is received from the authenticator and the access token is sent to the requesting application.

Abstract: A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H2:SiH4 ratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.