Patents by Inventor Xiaoqing He

Xiaoqing He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12210937
    Abstract: A method of improving usability and transparency of machine-learning aspects of applications providing various types of services is disclosed. Based on a request submitted through an administrative user interface, a data readiness check is performed on underlying data associated with the application. Based on a successful completion of the data readiness check, a configuration file is retrieved from an application server. The configuration file specifies a plurality of keys for generating a machine-learned model for the application. The machine-learned model is trained based on the plurality of keys specified in the configuration file. The machine-learned model is selected from a plurality of machine-learned models based on dry runs of the each of the plurality of models. The machine-learned model is activated with respect to the application. Scores are identified from the underlying data items based on the selected machine-learned model.
    Type: Grant
    Filed: November 16, 2018
    Date of Patent: January 28, 2025
    Assignee: SAP SE
    Inventors: Karthik S J, Amy He, Prajesh K, Georg Glantschnig, Riya Thosar, Arjun Karat, Yann Le Biannic, Jing Ye, Subhobrata Dey, Prerna Makanawala, Xiaoqing He
  • Publication number: 20200159690
    Abstract: A method of improving usability and transparency of machine-learning aspects of applications providing various types of services is disclosed. Based on a request submitted through an administrative user interface, a data readiness check is performed on underlying data associated with the application. Based on a successful completion of the data readiness check, a configuration file is retrieved from an application server. The configuration file specifies a plurality of keys for generating a machine-learned model for the application. The machine-learned model is trained based on the plurality of keys specified in the configuration file. The machine-learned model is selected from a plurality of machine-learned models based on dry runs of the each of the plurality of models. The machine-learned model is activated with respect to the application. Scores are identified from the underlying data items based on the selected machine-learned model.
    Type: Application
    Filed: November 16, 2018
    Publication date: May 21, 2020
    Inventors: Karthik S. J, Amy He, Prajesh K, Georg Glantschnig, Riya Thosar, Arjun Karat, Yann Le Biannic, Jing Ye, Subhobrata Dey, Prerna Makanawala, Xiaoqing He
  • Patent number: 10446706
    Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
    Type: Grant
    Filed: May 12, 2016
    Date of Patent: October 15, 2019
    Assignees: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY CO., LTD., LAWRENCE LIVERMORE NATIONAL SECURITY, LLC, THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS
    Inventors: Neil Mackie, Geordie Zapalac, Weijie Zhang, John F. Corson, Xiaoqing He, Angus Rockett, Joel Varley, Vincenzo Lordi
  • Publication number: 20190259898
    Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
    Type: Application
    Filed: April 30, 2019
    Publication date: August 22, 2019
    Inventors: Neil Mackie, Geordie Zapalac, Weijie Zhang, John F. Corson, Xiaoqing He, Angus Rockett, Joel Varley, Vincenzo Lordi
  • Publication number: 20160336475
    Abstract: A method of manufacturing a photovoltaic structure includes forming a p-type semiconductor absorber layer containing a copper indium gallium selenide based material over a first electrode, forming a n-type cadmium sulfide layer over the p-type semiconductor absorber layer by sputtering in an ambient including hydrogen gas and oxygen gas, and forming a second electrode over the cadmium sulfide layer.
    Type: Application
    Filed: May 12, 2016
    Publication date: November 17, 2016
    Inventors: Neil Mackie, Geordie Zapalac, Weijie Zhang, John F. Corson, Xiaoqing He, Angus Rockett, Joel Varley, Vincenzo Lordi