Patents by Inventor XiaoQuan Wang

XiaoQuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11972629
    Abstract: A texture recognition apparatus and an electronic apparatus are provided. The texture recognition apparatus has a touch side surface, and includes a light source array, an image sensor array and a light shielding matrix, the light source array includes a plurality of light sources; the image sensor array includes a plurality of image sensors, the plurality of image sensors are configured to receive light emitted from the plurality of light sources and reflected by a texture to the plurality of image sensors; the light shielding matrix includes a plurality of light shielding patterns arranged in an array, each of the plurality of image sensors includes a photosensitive element; the plurality of light sources do not overlap with the plurality of light shielding patterns, a photosensitive element of each of the plurality of image sensors at least partially overlaps with at least one or the plurality of light shielding patterns.
    Type: Grant
    Filed: May 25, 2021
    Date of Patent: April 30, 2024
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Xiaoquan Hai, Xue Dong, Lei Wang, Yingzi Wang, Xuan Liang
  • Patent number: 10838160
    Abstract: An optical fiber cable with optical fiber sensing and communication functions includes an outer sheath layer, an inner sheath layer, communicating optical fibers, and sensing optical fibers. The communicating optical fibers are laid inside the inner sheath layer, the sensing optical fibers are laid between the inner sheath layer and the outer sheath layer, and an inner reinforcing member is filled in the inner sheath layer. An outer reinforcing member-is filled between the inner sheath layer and the outer sheath layer, and a plurality of cutting kerfs for slotting are provided on an outer side wall of the outer sheath layer along a length direction of the outer sheath layer. A manufacturing method includes processes of cable paying-off, molding, extruding to form sheath layers, making cutting kerfs, cooling and cable taking-up, etc., which has simple operation and low production costs.
    Type: Grant
    Filed: July 21, 2017
    Date of Patent: November 17, 2020
    Assignee: NANJING WASIN FUJIKURA OPTICAL COMMUNICATION LTD.
    Inventors: Xiaoquan Wang, Haibo Wu, Chenglong Zhang, Guo Zhao
  • Publication number: 20200096718
    Abstract: An optical fiber cable with optical fiber sensing and communication functions includes an outer sheath layer, an inner sheath layer, communicating optical fibers, and sensing optical fibers. The communicating optical fibers are laid inside the inner sheath layer, the sensing optical fibers are laid between the inner sheath layer and the outer sheath layer, and an inner reinforcing member is filled in the inner sheath layer. An outer reinforcing member is filled between the inner sheath layer and the outer sheath layer, and a plurality of cutting kerfs for slotting are provided on an outer side wall of the outer sheath layer along a length direction of the outer sheath layer. A manufacturing method includes processes of cable paying-off, molding, extruding to form sheath layers, making cutting kerfs, cooling and cable taking-up, etc., which has simple operation and low production costs.
    Type: Application
    Filed: July 21, 2017
    Publication date: March 26, 2020
    Applicant: NANJING WASIN FUJIKURA OPTICAL COMMUNICATION LTD.
    Inventors: Xiaoquan WANG, Haibo WU, Chenglong ZHANG, Guo ZHAO
  • Patent number: 7566937
    Abstract: Disclosed is a MOS transistor including a multi-work function metal nitride gate electrode. The MOS transistor comprises a semiconductor substrate and a central gate electrode formed on the semiconductor substrate. The central gate electrode is formed of a metal nitride layer. A source side gate electrode and a drain side gate electrode are formed on respective opposite sidewalls of the central gate electrode. The source and drain side gate electrodes are composed of doped metal nitride containing first impurities having an electronegativity less than that of nitrogen or second impurities having an electronegativity greater than that of nitrogen.
    Type: Grant
    Filed: March 29, 2006
    Date of Patent: July 28, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: XiaoQuan Wang, Shigenobu Maeda, Min-Joo Kim
  • Publication number: 20060244079
    Abstract: Disclosed is a MOS transistor including a multi-work function metal nitride gate electrode. The MOS transistor comprises a semiconductor substrate and a central gate electrode formed on the semiconductor substrate. The central gate electrode is formed of a metal nitride layer. A source side gate electrode and a drain side gate electrode are formed on respective opposite sidewalls of the central gate electrode. The source and drain side gate electrodes are composed of doped metal nitride containing first impurities having an electronegativity less than that of nitrogen or second impurities having an electronegativity greater than that of nitrogen.
    Type: Application
    Filed: March 29, 2006
    Publication date: November 2, 2006
    Inventors: XiaoQuan Wang, Shigenobu Maeda, Min-Joo Kim