Patents by Inventor Xiao Ying Hong

Xiao Ying Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Double-sided image sensor formed on a single semiconductor wafer die
    Patent number: 8686342
    Abstract: An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: April 1, 2014
    Assignee: OmniVision Technologies, Inc.
    Inventors: Xiao Ying Hong, Dominic Massetti
  • DOUBLE-SIDED IMAGE SENSOR
    Publication number: 20130264467
    Abstract: An example double-sided image sensor includes a semiconductor die, a photodetector, a charge-to-voltage converter, and support circuitry. The semiconductor die has a first side and a second side that is opposite the first side. The photodetector is disposed within the semiconductor die on the first side for accumulating an image charge in response to light incident on the first side. The charge-to-voltage converter is disposed within the semiconductor die on the first side. The transfer gate is also disposed on the first side of the semiconductor die between the photodetector and the charge-to-voltage converter to transfer the image charge from the photodetector to the charge-to-voltage converter. Support circuitry of the image sensor is disposed within the semiconductor die on the second side and is electrically coupled to the charge-to-voltage converter.
    Type: Application
    Filed: April 9, 2012
    Publication date: October 10, 2013
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Xiao Ying Hong, Dominic Massetti