Patents by Inventor Xiaobin Xin
Xiaobin Xin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12153233Abstract: Optical components such as components that emit light and components that detect light may be provided. Optical components that emit light may include displays having arrays of display pixels with respective light-emitting devices such as crystalline semiconductor light-emitting diodes. Optical components that detect light may include image sensors or other components with arrays of photodetectors. The light-emitting devices and photodetectors in the optical components may be overlapped by metalenses such as multielement metalenses. A multielement metalens may have a first metalens element formed from a first layer of nanostructures arranged and an overlapping second metalens element formed from a second layer of nanostructures. Light sources may be provided on a semiconductor and metalens nanostructures may be formed on an opposing surface of the semiconductor.Type: GrantFiled: September 2, 2021Date of Patent: November 26, 2024Inventors: Xiaobin Xin, Dmitry S. Sizov, Fang Ou, Lei Zhang, Lina He, Nathaniel T. Lawrence, Paul S. Drzaic, Ranojoy Bose, Yuewei Zhang
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Publication number: 20240347516Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: ApplicationFiled: March 20, 2024Publication date: October 17, 2024Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Publication number: 20240250217Abstract: Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer and a pillar structure protruding from the base layer. The pillar structure includes a mesa structure and a second cladding layer that includes a plug portion that is laterally adjacent to a plurality of quantum well layers of the mesa structure.Type: ApplicationFiled: January 9, 2024Publication date: July 25, 2024Inventors: Xiaobin Xin, Dmitry S Sizov, Chi-Kang Li, Steve M Ting, Fang Ou, David P Bour
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Patent number: 11967586Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: GrantFiled: June 29, 2022Date of Patent: April 23, 2024Assignee: Apple Inc.Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Publication number: 20230324689Abstract: An electronic device may provide image light to an eye box. The display may include a light source panel that emits the image light. A waveguide may direct the image light towards the eye box. An input coupler may couple the image light into the waveguide and an output coupler may couple the image light out of the waveguide. A color filter may be optically interposed between the light source panel and the output coupler. The color filter may filter the image light using a steep cutoff characteristic. The color filter may allow the image light to exhibit a desired color point while also allowing the light source panel to use light emitters having peak emission wavelengths that maximize the efficiency of the light emitters and thus the power efficiency of the device.Type: ApplicationFiled: February 23, 2023Publication date: October 12, 2023Inventors: Dmitry S. Sizov, Xiaobin Xin, Hyungryul Choi, Vikrant Bhakta, Fang Ou, Lina He, Sergei Y. Yakovenko, Ranojoy Bose, Paul S. Drzaic
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Publication number: 20230018406Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: ApplicationFiled: June 29, 2022Publication date: January 19, 2023Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Publication number: 20220285577Abstract: Methods and structures are described to facilitate the transfer of device layer coupons with controlled vertical position. In an embodiment, a plurality of device layer coupons is bonded to a receiving substrate with an adhesive layer, where distance between front surfaces of the plurality of device layer coupons and a bulk layer of the receiving substrate is controlled by a plurality of rigid mechanical spacers.Type: ApplicationFiled: January 26, 2022Publication date: September 8, 2022Inventors: Lei Zhang, Fang Ou, Lina He, Paul S. Drzaic, Dmitry S. Sizov, Ranojoy Bose, Yuewei Zhang, Xiaobin Xin, Nathaniel T. Lawrence, Wei H. Yao
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Publication number: 20220278255Abstract: Display structures and methods of operation with micro light emitting diode (LED) sidewall gating are described. In an embodiment, a display structure includes a vertically oriented micro LED mounted on a display substrate, in which the micro LED includes a p-n diode with top and bottom electrode sides, and a sidewall gate electrode spanning a sidewall of the p-n diode where the active layer is included. In various embodiments, a bias may be applied to the sidewall gate electrode while driving the micro LED to deplete a minority carrier concentration from the sidewall of the p-n diode.Type: ApplicationFiled: January 14, 2022Publication date: September 1, 2022Inventors: Yuewei Zhang, Fang Ou, Lei Zhang, Lina He, Paul S. Drzaic, Xiaobin Xin
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Patent number: 11404400Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: GrantFiled: January 22, 2019Date of Patent: August 2, 2022Assignee: Apple Inc.Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Patent number: 10923626Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.Type: GrantFiled: August 21, 2019Date of Patent: February 16, 2021Inventors: David P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
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Publication number: 20200343230Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.Type: ApplicationFiled: January 22, 2019Publication date: October 29, 2020Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
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Patent number: 10591774Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.Type: GrantFiled: August 31, 2017Date of Patent: March 17, 2020Assignee: Apple Inc.Inventors: Jean-Jacques P. Drolet, Yuan Chen, Jonathan S. Steckel, Ion Bita, Dmitry S. Sizov, Chia Hsuan Tai, John T. Leonard, Lai Wang, Ove Lyngnes, Xiaobin Xin, Zhibing Ge
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Publication number: 20200052158Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.Type: ApplicationFiled: August 21, 2019Publication date: February 13, 2020Inventors: David P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
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Patent number: 10516081Abstract: Light emitting structures are described in which vertical inorganic semiconductor-based light emitting diodes (LEDs) with hexagon shaped sidewalls are mounted within corresponding circular reflective well structures. Diffuser layers may additionally laterally surround the hexagon shaped sidewalls within the circular reflective well structures.Type: GrantFiled: February 28, 2018Date of Patent: December 24, 2019Assignee: Apple Inc.Inventors: Xiaobin Xin, Dmitry S. Sizov, Andreas Bibl, Ion Bita, Yuan Chen, Lai Wang, Zhibing Ge
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Patent number: 10418519Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.Type: GrantFiled: December 14, 2016Date of Patent: September 17, 2019Assignee: Apple Inc.Inventors: David P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
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Publication number: 20180374991Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.Type: ApplicationFiled: December 14, 2016Publication date: December 27, 2018Inventors: David P. BOUR, Dmitry S. SIZOV, Daniel A. HAEGER, Xiaobin XIN
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Publication number: 20180292713Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.Type: ApplicationFiled: August 31, 2017Publication date: October 11, 2018Inventors: Jean-Jacques P. Drolet, Yuan Chen, Jonathan S. Steckel, Ion Bita, Dmitry S. Sizov, Chia Hsuan Tai, John T. Leonard, Lai Wang, Ove Lyngnes, Xiaobin Xin, Zhibing Ge
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Patent number: 8963209Abstract: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.Type: GrantFiled: February 4, 2013Date of Patent: February 24, 2015Assignee: Power Integrations, Inc.Inventors: Xiaobin Xin, Milan Pophristic, Michael Shur
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Patent number: 8368121Abstract: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.Type: GrantFiled: June 21, 2010Date of Patent: February 5, 2013Assignee: Power Integrations, Inc.Inventors: Xiaobin Xin, Milan Pophristic, Michael Shur
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Publication number: 20110309372Abstract: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.Type: ApplicationFiled: June 21, 2010Publication date: December 22, 2011Applicant: VELOX SEMICONDUCTOR CORPORATIONInventors: Xiaobin XIN, Milan POPHRISTIC, Michael SHUR