Patents by Inventor Xiaobin Xin

Xiaobin Xin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12153233
    Abstract: Optical components such as components that emit light and components that detect light may be provided. Optical components that emit light may include displays having arrays of display pixels with respective light-emitting devices such as crystalline semiconductor light-emitting diodes. Optical components that detect light may include image sensors or other components with arrays of photodetectors. The light-emitting devices and photodetectors in the optical components may be overlapped by metalenses such as multielement metalenses. A multielement metalens may have a first metalens element formed from a first layer of nanostructures arranged and an overlapping second metalens element formed from a second layer of nanostructures. Light sources may be provided on a semiconductor and metalens nanostructures may be formed on an opposing surface of the semiconductor.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: November 26, 2024
    Inventors: Xiaobin Xin, Dmitry S. Sizov, Fang Ou, Lei Zhang, Lina He, Nathaniel T. Lawrence, Paul S. Drzaic, Ranojoy Bose, Yuewei Zhang
  • Publication number: 20240347516
    Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
    Type: Application
    Filed: March 20, 2024
    Publication date: October 17, 2024
    Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
  • Publication number: 20240250217
    Abstract: Light emitting diodes with regrown semiconductor layers and methods of manufacture are described. In an embodiment, a light emitting diode includes a base structure including a first cladding layer and a pillar structure protruding from the base layer. The pillar structure includes a mesa structure and a second cladding layer that includes a plug portion that is laterally adjacent to a plurality of quantum well layers of the mesa structure.
    Type: Application
    Filed: January 9, 2024
    Publication date: July 25, 2024
    Inventors: Xiaobin Xin, Dmitry S Sizov, Chi-Kang Li, Steve M Ting, Fang Ou, David P Bour
  • Patent number: 11967586
    Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: April 23, 2024
    Assignee: Apple Inc.
    Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
  • Publication number: 20230324689
    Abstract: An electronic device may provide image light to an eye box. The display may include a light source panel that emits the image light. A waveguide may direct the image light towards the eye box. An input coupler may couple the image light into the waveguide and an output coupler may couple the image light out of the waveguide. A color filter may be optically interposed between the light source panel and the output coupler. The color filter may filter the image light using a steep cutoff characteristic. The color filter may allow the image light to exhibit a desired color point while also allowing the light source panel to use light emitters having peak emission wavelengths that maximize the efficiency of the light emitters and thus the power efficiency of the device.
    Type: Application
    Filed: February 23, 2023
    Publication date: October 12, 2023
    Inventors: Dmitry S. Sizov, Xiaobin Xin, Hyungryul Choi, Vikrant Bhakta, Fang Ou, Lina He, Sergei Y. Yakovenko, Ranojoy Bose, Paul S. Drzaic
  • Publication number: 20230018406
    Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
    Type: Application
    Filed: June 29, 2022
    Publication date: January 19, 2023
    Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
  • Publication number: 20220285577
    Abstract: Methods and structures are described to facilitate the transfer of device layer coupons with controlled vertical position. In an embodiment, a plurality of device layer coupons is bonded to a receiving substrate with an adhesive layer, where distance between front surfaces of the plurality of device layer coupons and a bulk layer of the receiving substrate is controlled by a plurality of rigid mechanical spacers.
    Type: Application
    Filed: January 26, 2022
    Publication date: September 8, 2022
    Inventors: Lei Zhang, Fang Ou, Lina He, Paul S. Drzaic, Dmitry S. Sizov, Ranojoy Bose, Yuewei Zhang, Xiaobin Xin, Nathaniel T. Lawrence, Wei H. Yao
  • Publication number: 20220278255
    Abstract: Display structures and methods of operation with micro light emitting diode (LED) sidewall gating are described. In an embodiment, a display structure includes a vertically oriented micro LED mounted on a display substrate, in which the micro LED includes a p-n diode with top and bottom electrode sides, and a sidewall gate electrode spanning a sidewall of the p-n diode where the active layer is included. In various embodiments, a bias may be applied to the sidewall gate electrode while driving the micro LED to deplete a minority carrier concentration from the sidewall of the p-n diode.
    Type: Application
    Filed: January 14, 2022
    Publication date: September 1, 2022
    Inventors: Yuewei Zhang, Fang Ou, Lei Zhang, Lina He, Paul S. Drzaic, Xiaobin Xin
  • Patent number: 11404400
    Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: August 2, 2022
    Assignee: Apple Inc.
    Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
  • Patent number: 10923626
    Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: February 16, 2021
    Inventors: David P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
  • Publication number: 20200343230
    Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
    Type: Application
    Filed: January 22, 2019
    Publication date: October 29, 2020
    Inventors: Dmitry S. Sizov, Ion Bita, Jean-Jacques P. Drolet, John T. Leonard, Jonathan S. Steckel, Nathaniel T. Lawrence, Xiaobin Xin, Ranojoy Bose
  • Patent number: 10591774
    Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: March 17, 2020
    Assignee: Apple Inc.
    Inventors: Jean-Jacques P. Drolet, Yuan Chen, Jonathan S. Steckel, Ion Bita, Dmitry S. Sizov, Chia Hsuan Tai, John T. Leonard, Lai Wang, Ove Lyngnes, Xiaobin Xin, Zhibing Ge
  • Publication number: 20200052158
    Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
    Type: Application
    Filed: August 21, 2019
    Publication date: February 13, 2020
    Inventors: David P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
  • Patent number: 10516081
    Abstract: Light emitting structures are described in which vertical inorganic semiconductor-based light emitting diodes (LEDs) with hexagon shaped sidewalls are mounted within corresponding circular reflective well structures. Diffuser layers may additionally laterally surround the hexagon shaped sidewalls within the circular reflective well structures.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: December 24, 2019
    Assignee: Apple Inc.
    Inventors: Xiaobin Xin, Dmitry S. Sizov, Andreas Bibl, Ion Bita, Yuan Chen, Lai Wang, Zhibing Ge
  • Patent number: 10418519
    Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: September 17, 2019
    Assignee: Apple Inc.
    Inventors: David P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
  • Publication number: 20180374991
    Abstract: LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
    Type: Application
    Filed: December 14, 2016
    Publication date: December 27, 2018
    Inventors: David P. BOUR, Dmitry S. SIZOV, Daniel A. HAEGER, Xiaobin XIN
  • Publication number: 20180292713
    Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.
    Type: Application
    Filed: August 31, 2017
    Publication date: October 11, 2018
    Inventors: Jean-Jacques P. Drolet, Yuan Chen, Jonathan S. Steckel, Ion Bita, Dmitry S. Sizov, Chia Hsuan Tai, John T. Leonard, Lai Wang, Ove Lyngnes, Xiaobin Xin, Zhibing Ge
  • Patent number: 8963209
    Abstract: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.
    Type: Grant
    Filed: February 4, 2013
    Date of Patent: February 24, 2015
    Assignee: Power Integrations, Inc.
    Inventors: Xiaobin Xin, Milan Pophristic, Michael Shur
  • Patent number: 8368121
    Abstract: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: February 5, 2013
    Assignee: Power Integrations, Inc.
    Inventors: Xiaobin Xin, Milan Pophristic, Michael Shur
  • Publication number: 20110309372
    Abstract: A circuit includes input drain, source and gate nodes. The circuit also includes a group III nitride enhancement-mode HFET having a source, drain and gate and a voltage shifter having a first terminal connected to the gate of the enhancement mode HFET at a common junction. The circuit also includes a load resistive element connected to the common junction. The drain of the enhancement-mode HFET serves as the input drain node, the source of the enhancement-mode HFET serves as the input source node and a second terminal of the voltage shifter serves as the input gate node.
    Type: Application
    Filed: June 21, 2010
    Publication date: December 22, 2011
    Applicant: VELOX SEMICONDUCTOR CORPORATION
    Inventors: Xiaobin XIN, Milan POPHRISTIC, Michael SHUR