Patents by Inventor Xiaobing Diana Ma

Xiaobing Diana Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for anisotropically etching tungsten using SF.sub.6, CHF.sub.3, and N.sub.2
    Patent number: 5866483
    Abstract: A method for etching a tungsten containing layer 25 on a substrate 10 substantially anisotropically, with good etching selectivity, and without forming excessive passivating deposits on the etched features. In the method, the substrate 10 is placed in a plasma zone 55, and process gas comprising SF.sub.6, CHF.sub.3, and N.sub.2, is introduced into the plasma zone. A plasma is formed from the process gas to anisotropically etch the tungsten containing layer 22. Preferably, the plasma is formed using combined inductive and capacitive plasma operated at a predefined inductive:capacitive power ratio.
    Type: Grant
    Filed: April 4, 1997
    Date of Patent: February 2, 1999
    Assignee: Applied Materials, Inc.
    Inventors: Guang-Jye Shiau, Paul Herz, Xian-Can Deng, Xiaobing Diana Ma