Abstract: The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d33 and different Curie temperatures TC in the process.

Abstract: A structure for testing a semiconductor device.

Abstract: A structure for testing a semiconductor device.

Abstract: Problem to be Solved An object of the present invention is to provide a lead-free piezoelectric material capable of showing a high piezoelectric coefficient (d33>500 pC/N) exceeding that of soft PZT. Solution The present invention 1 is a lead-free piezoelectric material containing no toxic element such as Pb, comprising a pseudo-binary solid solution of {[(Ba1-x1M1x1)((Ti1-xZrx)1-y1N1y1)O3]-? % [(Ba1-yCay)1-x2M2x2)(Ti1-y2N2y2)O3]} (wherein M1, N1, M2 and N2 represent an additive element)(abbreviated as BZT-? % BCT).

Abstract: A piezoelectric material is provided that has mobile point defects which are arranged so that the short-range order symmetry is matched with the crystal symmetry of the ferroelectric phase. A large non-linear electrostrain effect is obtained by the reversible domain switching under electric field in the ferroelectric material. Thus, it is possible to provide a piezoelectric material and its element having a large and steep deformation even at low voltage. Its manufacturing method is also disclosed.