Abstract: Disclosed is a compound of formula (I): (R1 R2N)SinH2n(NR3R4) (I) wherein subscript n, R1, R2, R3 and R4 are as defined herein. Also disclosed are a method of making, intermediates useful therein, method of using, and composition comprising the compound of formula (I).

Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

Abstract: Disclosed is a Silicon Precursor Compound for deposition, the Silicon Precursor Compound comprising pentachlorodisilane; a composition for film forming, the composition comprising the Silicon Precursor Compound and at least one of an inert gas, molecular hydrogen, a carbon precursor, nitrogen precursor, and oxygen precursor; a method of forming a silicon-containing film on a substrate using the Silicon Precursor Compound, and the silicon-containing film formed thereby.

Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract: Chemical processes comprise selectively synthesizing diisopropylamino-disilanes and reduction of chloride in aminosilanes, and the compositions comprise the diisopropylamino-disilanes and at least one reaction by-product prepared thereby. The diisopropylamino-disilanes are diisopropylamino-pentachlorodisilane and diisopropylamino-disilane.

Abstract: Disclosed is a compound of formula (I): (R1 R2N)SinH2n(NR3R4) (I) wherein subscript n, R1, R2, R3 and R4 are as defined herein. Also disclosed are a method of making, intermediates useful therein, method of using, and composition comprising the compound of formula (I).

Abstract: Disclosed is a compound of formula (I): (R1R2N)SinH2n+1 (I), wherein subscript n is an integer from 3 to 9; and each R1 and R2 independently is (C1-C6)alkyl, (C3-C6)cycloalkyl, (C2-C6)alkenyl, (C2-C6)alkynyl, or phenyl; or R1 is H and R2 is (C1-C6)alkyl, (C3-C6)cycloalkyl, (C2-C6)alkenyl, (C2-C6)alkynyl, or phenyl; or R1 and R2 are bonded together to be —R1a-R2a— wherein —R1a-R2a— is (C2-C6)alkylene. Also disclosed are a method of making, intermediates useful therein, method of using, and composition comprising the compound of formula (I).

Abstract: Chemical processes comprise selectively synthesizing diisopropylamino-disilanes and reduction of chloride in amin-osilanes, and the compositions comprise the diisopropylamino-disilanes and at least one reaction by-product prepared thereby. The diisopropylamino-disilanes are diisopropylamino-pentachlorodisilane and diisopropylamino-disilane.

Abstract: A method for producing a reaction product comprising an ester-functional silane, the method comprising: i) reacting a composition comprising: a) a haloorganosilane, b) a metal salt of a carboxy-functional compound, c) a phase transfer catalyst comprising a bicyclic amidine, an iminium compound, or a mixture thereof, provided that the iminium compound is not an acyclic guanidinium compound or pyridinium compound, and d) a co-catalyst, provided that the co-catalyst is optional when the phase transfer catalyst comprises the iminium compound.

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract: A compound that is 2,2,4,4-tetrasilylpentasilane, chemical compositions comprising same, methods of making and purifying 2,2,4,4-tetrasilylpentasilane, the purified 2,2,4,4-tetrasilylpentasilane prepared thereby, and methods of forming silicon-containing materials using 2,2,4,4-tetrasilylpentasilane as a precursor.

Abstract: A process for preparing an acryloyloxysilane, the process comprising reacting a metal salt of a carboxylic acid having the formula [CR22?CR1COO?]aMa+ (I), with a haloorganoalkoxysilane having the formula XR3Si(OR4)nR53—n (II) in the presence of mineral spirits and a phase transfer catalyst at a temperature of from 50 to 160° C. to form a mixture comprising an acryloyloxysilane and a metal halide having the formula Ma+X?a (III), wherein R1 is H or C1-C6 hydrocarbyl, each R2 is independently R1 or [COO?]aMa+, Ma+ is an alkali metal cation or alkaline earth metal cation, a is 1 or 2, X is halo, R3 is C1-C6 hydrocarbylene, each R4 is independently C1-C10 Q hydrocarbyl, each R5 is independently R1 and n is an integer from 1 to 3.

Abstract: The inventive concepts provide silicon precursors, methods of forming a layer using the same, and methods of fabricating a semiconductor device using the same. The silicon precursor includes a silane group including two or more silicon atoms. The silicon precursor has a high and uniform adsorption property on surfaces of layers (e.g., a silicon layer, an oxide layer, and a nitride layer) that are mainly used when semiconductor devices are fabricated.

Abstract: A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.

Abstract: A method for producing a reaction product comprising an ester-functional silane, the method comprising: i) reacting a composition comprising: a) a haloorganosilane, b) a metal salt of a carboxy-functional compound, c) a phase transfer catalyst comprising a bicyclic amidine, an iminium compound, or a mixture thereof, provided that the iminium compound is not an acyclic guanidinium compound or pyridinium compound, and d) a co-catalyst, provided that the co-catalyst is optional when the phase transfer catalyst comprises the iminium compound.

Abstract: A method of preparing a polymeric methylene diphenyl diisocyanate-polydialkylsiloxane resin by mixing at a temperature between 25° C. and 100° C.: (i) a polymeric methylene diphenyl diisocyanate with (ii) a polydialkylsiloxane selected from hydroxyalkyl dialkyl terminated polydialkylsiloxane having a viscosity of from 5 to 500 000 cSt at 25° C. or (hydroxyalkoxy)alkyl dialkyl terminated polydialkylsiloxane having a viscosity of from 5 to 500 000 cSt at 25° C. in an amount such that from 1 to 99% by weight of the total weight of (i) and (ii) is component (ii), optionally in the presence of a solvent; and subsequently extracting the solvent, if present.

Abstract: An antireflective coating (ARC) formulation for use in photolithography is provided that comprises silicon-rich polysilanesiloxane resins dispersed in a solvent, as well as a substrate having a surface coated with the ARC formulation and a method of applying the ARC formulation to said surface to form an ARC layer. The polysilanesiloxane resins comprise a first component defined by structural units of (R?)2SiO2; a second component defined by structural units of (R?)SiO3 and a third component defined by structural units of (R??)q+2Si2O4?q. In these polysilanesiloxane resins, the R?, R?, and R?? are independently selected to be hydrocarbon or hydrogen (H) groups; and the subscript q is 1 or 2. Alternatively, the R?, R?, and R?? are independently selected as methyl (Me) or hydrogen (H) groups. Typically, the first component is present in a molar ratio x, the second component is present in molar ratio y, and the third component is present in a molar ratio z, such that (x+y+z)=1, x<y, and x<z.

Abstract: A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.

Abstract: A method of producing silicon containing thin films by the thermal polymerization of a reactive gas mixture bisaminosilacyclobutane and source gas selected from a nitrogen providing gas, an oxygen providing gas and mixtures thereof. The films deposited may be silicon nitride, silicon carbonitride, silicon dioxide or carbon doped silicon dioxide. These films are useful as dielectrics, passivation coatings, barrier coatings, spacers, liners and/or stressors in semiconductor devices.