Abstract: The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.

Abstract: The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.

Abstract: Certain embodiments described herein are generally directed to improving performance of one or more machines within a system by clustering multidimensional datasets relating to the performance of the machines using inter-group dissimilarities between groups of the dataset. The method for improving performance of one or more machines within a system, includes forming a multidimensional dataset having a plurality of groups using performance related data associated with one or more machines in the system, clustering the plurality of groups into one or more clusters based on intergroup dissimilarities between the plurality of groups, identifying one or more anomalous clusters from among the one or more clusters, identifying the one or more anomalous groups in the one or more anomalous clusters, and adjusting a configuration of the system to improve the performance of the one or more machines corresponding to the one or more anomalous groups.

Abstract: A sterilization method that generates a sterilization gas by vaporizing a sterilizing agent supplied to a chamber having reduced pressure, and sterilizes an object to be sterilized using the sterilization gas, said method comprising (a) a first step for reducing the pressure of the chamber to a prescribed pressure, and (b) a second step for generating the sterilization gas by injecting the sterilizing agent into the chamber after the first step. The second step comprises (b1) a first sub-step for generating the sterilization gas by injecting a prescribed amount of the sterilizing agent into the chamber, (b2) a second sub-step for standing by after the first sub-step until a predetermined criterion is satisfied, and (b3) a third sub-step for repeating the first sub-step and the second sub-step a prescribed number of times.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

Abstract: A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.

Abstract: A modular power supply system is configured to include: a main controller, configured to output a mam control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; N auxiliary power supplies, in one-to-one correspondence with the N local controllers, wherein each of the auxiliary power supplies is configured to provide power to the corresponding local controller; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units is configured to include M power converters, each of the power converters is configured to operate according to the local control signal.

Abstract: Exemplary methods, apparatuses, and systems include receiving time series data for each of a plurality of performance metrics. The time series data is sorted into buckets based upon an amount of variation of time series data values for each performance metric. The time series data in each bucket is divided into first and second clusters of time series data points. The bucket having the greatest distance between clusters is used to determine a performance metric having a greatest distance between clusters. The performance metric having the greatest distance between clusters is reported as a potential root cause of a performance issue.

Abstract: The present disclosure provides a gate circuit and a gate drive circuit for a power semiconductor switch, including: a zener diode and a charge dissipation circuit. A first end of the zener diode is connected to a first end of the charge dissipation circuit and a gate of the power semiconductor switch, a second end of the zener diode is connected to a second end of the charge dissipation circuit and a second end of the power semiconductor switch. A first parasitic capacitor is formed between a first end and the gate of the power semiconductor switch, and a second parasitic capacitor is formed between the gate and the second end of the power semiconductor switch.

Abstract: A modular power supply system includes: a main controller, configured to output a main control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, and the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units is configured to include M power converters, wherein each of the power converters includes a third end and a fourth end, the fourth end of each of the power converters is connected to the third end of an adjacent one of the power converters.

Abstract: A drive circuit of a power semiconductor switch includes: a pulse modulation circuit having a first terminal configured to receive a fault signal, an isolation transformer, and a pulse demodulation circuit; when there is no fault signal being received, the pulse modulation circuit outputs a first turn on pulse signal and a first turn off pulse signal via the isolation transformer and the pulse demodulation circuit to charge/discharge a gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned on and turned off at a first speed; when the fault signal is received, the pulse modulation circuit outputs a second turn off pulse signal via the isolation transformer and the pulse demodulation circuit to discharge the gate capacitor of the power semiconductor switch, so as to drive the power semiconductor switch to be turned off at a second speed.

Abstract: The present disclosure provides a temperature protection circuit for a power converter, including a plurality of temperature protection branches, each of the temperature protection branches comprises a resistor, a voltage source, a temperature switch, and an isolation transformer, and each of the temperature protection branches corresponds to one of the power semiconductor switch blocks, and a first end of the resistor of each of the temperature protection branches is coupled to an output electrode of the power semiconductor switch block, and a second end of the resistor is coupled to a first end of the voltage source and coupled to a first end of the contact of the temperature switch via a primary winding of the isolation transformer, a second end of the voltage source and a second end of the contact of the temperature switch are respectively coupled to the potential midpoint of the power converter.

Abstract: The disclosure relates to a method, an apparatus and a computer-readable medium for device control. The method includes obtaining remaining battery energy, an operating power and a timing period for the device and determining a power change curve of the device when the remaining battery energy is insufficient to enable the device to operate with the operating power for the timing period. The method also includes adjusting the operating power of the device according to the power change curve of the device to enable the device to operate for the timing period.

Abstract: A modular power supply system, includes: a main controller, configured to output a main control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units includes M power converters, and each of the power converters is configured to operate according to the local control signal output by a corresponding local controller, wherein each of the power units further includes: M sampling circuits, configured to sample positive DC bus voltages and negative DC bus voltages of the M power converters respectively.

Abstract: A modular power supply system includes: a main controller, configured to output a main control signal; N local controllers, wherein each of the local controllers is configured to receive the main control signal to output at least one local control signal; and N power units, in one-to-one correspondence with the N local controllers, wherein each of the power units includes a first end and a second end, and the second end of each of the power units is connected to the first end of an adjacent one of the power units, each of the power units is configured to include M power converters, each of the power converters is configured to operate according to the local control signal, wherein the same local control signal controls the power semiconductor switches at an identical position in at least two of the M power converters to be simultaneously turned on and off.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

Abstract: A power unit includes: a plurality of power converters, a first output terminal of one of two adjacent power converters among the plurality of power converters is connected successively to a second output terminal of the other one of the two adjacent power converters; a local controller configured to output a plurality of control signals; and a plurality of driving circuits configured to output driving signals according to the plurality of control signals, to drive the plurality of power semiconductor switches to be turned on and off, wherein the control signals corresponding to the power semiconductor switches in the same position of the plurality of power converters are the same, the power semiconductor switches in the same position of the plurality of power converters are simultaneously turned on and off.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

Abstract: Certain embodiments described herein are generally directed to improving performance of one or more machines within a system by clustering multidimensional datasets relating to the performance of the machines using inter-group dissimilarities between groups of the dataset. The method for improving performance of one or more machines within a system, includes forming a multidimensional dataset having a plurality of groups using performance related data associated with one or more machines in the system, clustering the plurality of groups into one or more clusters based on intergroup dissimilarities between the plurality of groups, identifying one or more anomalous clusters from among the one or more clusters, identifying the one or more anomalous groups in the one or more anomalous clusters, and adjusting a configuration of the system to improve the performance of the one or more machines corresponding to the one or more anomalous groups.

Abstract: The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.