Abstract: Provided is a superconducting transition-edge thermal sensor, comprising a superconducting film defining an active area for incidence of quanta thereon, wherein the superconducting film is made of a superconductor exhibiting a charge carrier density below 1013 cm?2 and an electronic heat capacity below 103 kb at the critical temperature Tc of said superconductor, wherein the superconductor is formed by two or more layers of two-dimensional crystals stacked on top of another.

Abstract: Provided is a superconducting transition-edge thermal sensor, comprising a superconducting film defining an active area for incidence of quanta thereon, wherein the superconducting film is made of a superconductor exhibiting a charge carrier density below 1013 cm?2 and an electronic heat capacity below 103 kb at the critical temperature Tc of said superconductor, wherein the superconductor is formed by two or more layers of two-dimensional crystals stacked on top of another.

Abstract: The present invention relates to a superconducting nanowire single-photon detector, which can include a superconducting nanowire configured and arranged for the incidence of a photon on a region thereof and the formation, on that region, of a localized non-superconducting region or hotspot. The superconducting nanowire is made of a high-Tc cuprate superconductor material having a superconducting critical temperature above 77 K. The present invention also relates to a method for obtaining the superconducting nanowire single-photon detector of the present invention.