Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.

Abstract: A single platen Chemical Mechanical Planarization (CMP) process using a novel pad-in-a-bottle (PIB) technology and PIB type CMP slurries for back-end CMP application is described to replace multiple (such as three) platens Chemical Mechanical Planarization (CMP) process for back-end CMP applications. The single platen with a single polishing pad is used for the whole back-end CMP process comprising metal bulk, metal soft landing, and metal barrier CMP.

Abstract: A novel pad-in-a-bottle (PIB) technology and PIB-type advanced chemical-mechanical planarization (CMP) Copper or THROUGH-SILICON VIA (TSV) CMP compositions, systems and processes have been disclosed. The role of conventional polishing pad asperities is played by high-quality micron-size polyurethane (PU) beads that are comparable to the sizes of pores and asperities in polishing pads. The less expensive non-porous, and solid polishing pads were less expensive, have been employed for reducing electronic device fabrication cost. There are benefits for using PIB-type Cu CMP slurries vs Non-PIB type Cu CMP slurries. Increased Cu removal rates at different applied down forces and sliding velocities, reduced Cu line dishing across different sized Cu line features and slightly reduced averaged COF have been observed using PIB-type Cu CMP slurries.

Abstract: Synthesis of triazole- and/or triazolium-based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising triazole- and/or triazolium-based polymers; and water. The use of the synthesized triazole- and/or triazolium-based polymers in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

Abstract: The present invention discloses Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems that offer high and tunable Oxide: SiN and Oxide: Poly-Si removal selectivity, and low oxide trench dishing at different pH conditions in addition to suppressed Poly-Si removal rates. The polishing compositions comprise abrasive particles such as calcined ceria, and at least two preferably at least three chemical additives. The additives are (1) chemicals such as D-mannose, L-mannose, ribitol (D-ribitol), xylitol, meso-erythritol, D-sorbitol, mannitol, dulcitol, iditol, maltitol, fructose, sorbitan, sucrose, D-ribose, inositol, and glucose; (2) polyacrylic acid or polyacrylate and its ammonium, potassium or sodium salt, and (3) polyethylene glycol (PEG) with different molecular weight distributions as film selectivity tuning and oxide trench dishing reducing additives.

Abstract: A novel pad-in-a-bottle (PIB) technology for advanced chemical-mechanical planarization (CMP) copper barrier CMP compositions, systems and processes has been disclosed for use with polyurethane-based polishing pads having a plurality of asperities. The CMP composition comprises abrasives, polyurethane beads, and surfactant. The polishing pad lifetime increasing is achieved using PIB-type Cu barrier CMP polishing composition.

Abstract: High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

Abstract: Present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions 5 contain ceria coated inorganic oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the group consisting of nitrogen containing organic aromatic or pyridine ring molecule with one carboxylic acid group, one carboxy late salt group, or one carboxy late ester group at position ?2, ?3, or ?4 respectively; non-ionic organic molecule with multi hydroxyl functional groups; and 10 combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.

Abstract: Synthesis of phosphonium based polymers is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising phosphonium based polymers; and water. The use of the synthesized phosphonium based polymers in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

Abstract: Synthesis of imidazolium-based poly(ionic liquid)s is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising imidazolium-based poly(ionic liquid); and water. The use of the synthesized imidazolium-based poly(ionic liquid)s in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

Abstract: Provided are Chemical Mechanical Planarization (CMP) compositions that offer high and tunable Cu removal rates and low Cu static etching rates for polishing the broad bulk or advanced node copper or Through Silica Via (TSV). The CMP compositions also provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, TiN, and SiN; and dielectric films, such as TEOS, low-k, and ultra-low-k films. The CMP polishing compositions comprise abrasive, oxidizer, at least two chelators selected from the group consisting of amino acids, amino acid derivatives, and combinations therefore; the Cu static etching reducing agents include, but not limited to, organic alkyl sulfonic acids with straight or branched alkyl chains, and salts of organic alkyl sulfonic acids.

Abstract: A novel pad-in-a-bottle (PIB) technology for advanced chemical-mechanical planarization (CMP) Copper or THROUGH-SILICON VIA (TSV) CMP compositions, systems and processes has been disclosed. The role of conventional polishing pad asperities is played by high-quality micron-size polyurethane (PU) beads that are comparable to the sizes of pores and asperities in polishing pads.

Abstract: Polishing compositions comprising ceria coated silica particles and organic acids having one selected from the group consisting of sulfonic acid group, phosphonic acid group, pyridine compound, and combinations thereof, with pH between 5 and 10 and electrical conductivity between 0.2 and 10 millisiemens per centimeter provide very high silicon oxide removal rates for advanced semiconductor device manufacturing.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use a unique combination of abrasives such as ceria coated silica particles and chemical additives such as maltitol, lactitol, maltotritol or combinations as oxide trench dishing reducing additives.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates; low oxide trench dishing, and high oxide: SiN selectivity. Dual chemical additives comprise at least one silicone-containing compound comprising at least one of (1) ethylene oxide and propylene oxide (EO-PO) group, and at least one of substituted ethylene diamine group on the same molecule; and (2) at least one non-ionic organic molecule having at least two, preferably at least four hydroxyl functional groups.

Abstract: Chemical mechanical planarization (CMP) polishing compositions, methods and systems are provided to reduce oxide trench dishing and improve over-polishing window stability. High and tunable silicon oxide removal rates, low silicon nitride removal rates, and tunable SiO2:SiN selectivity are also provided. The compositions use unique chemical additives, such as maltitol, lactitol, maltotritol, ribitol, D-sorbitol, mannitol, dulcitol, iditol, D-(?)-Fructose, sorbitan, sucrose, ribose, Inositol, glucose, D-arabinose, L-arabinose, D-mannose, L-mannose, meso-erythritol, beta-lactose, arabinose, or combinations thereof as oxide trench dishing reducing additives.

Abstract: This invention pertains to slurries, methods and systems that can be used in chemical mechanical planarization (CMP) of tungsten containing semiconductor device. Using the CMP slurries with additives to counter lowering of pH by tungsten polishing byproducts and maintain pH 4 or higher, the erosion of dense metal (such as tungsten) structures can be greatly diminished.

Abstract: Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic metal oxide particles, such as ceria-coated silica; and dual chemical additives for providing the tunable oxide film removal rates and tunable SiN film removal rates. Chemical additives comprise at least one nitrogen-containing aromatic heterocyclic compound and at least one non-ionic organic molecule having more than one hydroxyl functional group organic.

Abstract: High oxide film removal rate Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods, and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and a chemical additive for providing a high oxide film removal rate. The chemical additive is a gelatin molecule possessing negative and positive charges on the same molecule.

Abstract: The present invention provides Chemical Mechanical Planarization Polishing (CMP) compositions for Shallow Trench Isolation (STI) applications. The CMP compositions contain ceria coated inorganic metal oxide particles as abrasives, such as ceria-coated silica particles; chemical additive selected from the first group of non-ionic organic molecules multi hydroxyl functional groups in the same molecule; chemical additives selected from the second group of aromatic organic molecules with sulfonic acid group or sulfonate salt functional groups and combinations thereof; water soluble solvent; and optionally biocide and pH adjuster; wherein the composition has a pH of 2 to 12, preferably 3 to 10, and more preferably 4 to 9.