Patents by Inventor Xiaochen MA

Xiaochen MA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11092866
    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.
    Type: Grant
    Filed: July 18, 2019
    Date of Patent: August 17, 2021
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Hehe Hu, Xiaochen Ma, Guangcai Yuan, Ce Ning, Xin Gu
  • Publication number: 20210229088
    Abstract: A microfluidic channel and a preparation method and an operation method thereof. The microfluidic channel includes: a channel structure, including a channel for a liquid sample to flow through and a channel wall surrounding the channel. The channel wall includes an electrolyte layer made of an electrolyte material; and a control electrode layer, at a side of the electrolyte layer away from the channel. The control electrode layer overlaps with the electrolyte layer with respect to the channel.
    Type: Application
    Filed: March 11, 2019
    Publication date: July 29, 2021
    Inventors: Xiaochen MA, Guangcai YUAN, Ce NING, Zhengliang LI
  • Publication number: 20210229977
    Abstract: A micro-nano channel structure, a method for manufacturing the micro-nano channel structure, a sensor, a method for manufacturing the sensor, and a microfluidic device are provided by the embodiments of the present disclosure. The micro-nano channel structure includes: a base substrate; a base layer, on the base substrate and including a plurality of protrusions; and a channel wall layer, on a side of the plurality of the protrusions away from the base substrate, and the channel wall layer has a micro-nano channel; a recessed portion is provided between adjacent protrusions of the plurality of the protrusions, and an orthographic projection of the micro-nano channel on the base substrate is located within an orthographic projection of the recessed portion on the base substrate.
    Type: Application
    Filed: April 3, 2019
    Publication date: July 29, 2021
    Inventors: Xiaochen MA, Guangcai YUAN, Ce NING, Xin GU, Xiao ZHANG Xiao ZHANG, Chao LI
  • Publication number: 20210220824
    Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.
    Type: Application
    Filed: April 16, 2019
    Publication date: July 22, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Ce Ning, Xiaochen Ma, Hehe Hu, Guangcai Yuan, Xin Gu
  • Publication number: 20210226064
    Abstract: Provided are a thin film transistor including: a base cushion layer having a recessed portion, base insulating layer, source-drain layer and active layer. The base insulating layer is located on a side of the base cushion layer where the recessed portion is located, and has a first and second partition walls that are spaced apart, and an orthographic projection region of a gap region between the first and second partition walls onto the base cushion layer is located at a region where the recessed portion is located; and both orthographic projection regions of the first and second partition walls onto the base cushion layer partially overlap with the recessed portion region; and both the source-drain layer and the active layer are located on the side of the base insulating layer away from the base cushion layer.
    Type: Application
    Filed: November 19, 2019
    Publication date: July 22, 2021
    Inventors: Xiaochen Ma, Guangcai Yuan, Ce Ning, Xin Gu, Hehe Hu
  • Publication number: 20210217784
    Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.
    Type: Application
    Filed: November 21, 2019
    Publication date: July 15, 2021
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Zhengliang Li, Jiayu He, Hehe Hu, Wenlin Zhang, Song Liu, Xiaochen Ma, Nianqi Yao, Jie Huang
  • Publication number: 20210129140
    Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebtween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.
    Type: Application
    Filed: September 24, 2019
    Publication date: May 6, 2021
    Inventors: Xiaochen MA, Guangcai YUAN, Ce NING, Xin GU, Hehe HU
  • Publication number: 20210063793
    Abstract: The present disclosure provides a display panel and a manufacturing method thereof, a driving method and a display device. The display panel includes: a base substrate and a thin film transistor on a surface of the base substrate. The thin film transistor includes: a gate, and a source and a drain arranged along a first direction, and a first passivation layer covering the gate, the source and the drain. a space region in which liquid crystal molecules are filled is formed in the first passivation layer. The space region is between the source and the drain. The source and the drain are configured to control rotation of the liquid crystal molecules.
    Type: Application
    Filed: July 18, 2019
    Publication date: March 4, 2021
    Inventors: Hehe HU, Xiaochen MA, Guangcai YUAN, Ce NING, Xin GU
  • Publication number: 20200355645
    Abstract: Embodiments of the present disclosure provide a transistor, a manufacturing method thereof, a display device and a method for detecting an ion concentration. The transistor includes a gate insulating layer including a solid porous electrolyte.
    Type: Application
    Filed: December 27, 2018
    Publication date: November 12, 2020
    Inventor: Xiaochen MA
  • Patent number: 10823697
    Abstract: The present disclosure provides a thin film transistor, a sensor, a biological detection device and a method. The thin film transistor includes a substrate, a first gate, a first dielectric layer, a source, a drain, a semiconductor layer, a second dielectric layer, and a second gate. The first gate is on the substrate. The first dielectric layer is on the substrate and the first gate. The source, the drain, and the semiconductor layer are on a side of the first dielectric layer facing away from the first gate. The second dielectric layer is on the first dielectric layer and the semiconductor layer. A material of the second dielectric layer is a solid state electrolyte material. The second gate is on a side of the second dielectric layer facing away from the semiconductor layer.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: November 3, 2020
    Assignee: BOE Technology Group Co., Ltd.
    Inventor: Xiaochen Ma
  • Publication number: 20200340097
    Abstract: Embodiments of the present invention provide a sputtered silicon oxide electrolyte and a method for producing the same, wherein one or more of the predetermined pressure of the working gas and the power density per target unit area are controlled such that the sputtered silicon oxide electrolyte has an amorphous structure, a density of between 0.5 to 2.0 g/cm3 and a unit area capacitance of between 0.05 to 15.0 ?F/cm2 at 10-200 Hz.
    Type: Application
    Filed: February 5, 2018
    Publication date: October 29, 2020
    Inventors: Aimin Song, Xiaochen Ma
  • Publication number: 20200194553
    Abstract: The present application provides a TFT, a manufacturing method thereof, and a sensor. The TFT includes a substrate, and a source, a drain and an active layer on the substrate. The active layer includes a microchannel, and the thin film transistor is configured to detect a sample in the microchannel. When a sample to be detected enters the microchannel, the electron distribution in the active layer would be affected, which causes fluctuations in the TFT characteristics. By detecting such fluctuations, detecting the composition and property of the liquid to be detected may be achieved. Moreover, by virtue of the microchannel, the sample may be precisely controlled. The impact of the external environment may be reduced and the detection accuracy can be enhanced. Continuous monitoring instead of one-time detection of the sample may be achieved and the sample detection efficiency may be improved.
    Type: Application
    Filed: July 24, 2019
    Publication date: June 18, 2020
    Inventors: Xiaochen MA, Guangcai YUAN, Ce NING, Hehe HU, Xin GU
  • Patent number: 10629834
    Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: April 21, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Song Liu, Yu Wen, Jianming Sun, Zhengliang Li, Xiaochen Ma, Hehe Hu, Wenlin Zhang, Jianhua Du, Ce Ning
  • Publication number: 20190323987
    Abstract: The present disclosure provides a thin film transistor, a sensor, a biological detection device and a method. The thin film transistor includes a substrate, a first gate, a first dielectric layer, a source, a drain, a semiconductor layer, a second dielectric layer, and a second gate. The first gate is on the substrate. The first dielectric layer is on the substrate and the first gate. The source, the drain, and the semiconductor layer are on a side of the first dielectric layer facing away from the first gate. The second dielectric layer is on the first dielectric layer and the semiconductor layer. A material of the second dielectric layer is a solid state electrolyte material. The second gate is on a side of the second dielectric layer facing away from the semiconductor layer.
    Type: Application
    Filed: January 3, 2019
    Publication date: October 24, 2019
    Inventor: Xiaochen MA
  • Publication number: 20190267559
    Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.
    Type: Application
    Filed: August 28, 2018
    Publication date: August 29, 2019
    Inventors: Song Liu, Yu Wen, Jianming Sun, Zhengliang Li, Xiaochen Ma, Hehe Hu, Wenlin Zhang, Jianhua Du, Ce Ning
  • Patent number: 9957671
    Abstract: An anti-rutting pavement structure is arranged consecutively from bottom to top, a semi-rigid base layer, a SBS emulsified asphalt adhesive layer, a Type II latex cement mortar poured asphalt concrete lower layer, a Type I latex cement mortar poured asphalt concrete middle layer and a high viscosity modified asphalt SMA-13 concrete surface layer.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: May 1, 2018
    Assignees: RESEACH INSTITUTE OF HIGHWAY MINISTRY OF TRANSPORT, CHONGQING CONSTRUCTION ENGINEERING GROUP CORPORATION LIMITED
    Inventors: Ke Zhong, Yifei Wu, Sang Luo, Bo Chen, Guoqiang Liu, Xiaochen Ma, Jing Ding, Chengyong Hu, Guanghua Yue, Ronghua Chang
  • Publication number: 20180044862
    Abstract: An anti-rutting pavement structure, which is characterized in that it comprises, arranged consecutively from bottom to top, a semi-rigid base layer, a SBS emulsified asphalt adhesive layer, a Type II latex cement mortar poured asphalt concrete lower layer, a Type I latex cement mortar poured asphalt concrete middle layer and a high viscosity modified asphalt SMA-13 concrete surface layer. Compared with prior art, the present invention has improved great contributions of the middle and lower layer of the semi-rigid base layer pavement for rutting under high temperatures and heavy loads, while the pavement having a good crack-resistance, improvement for coordination of the overall deformation of the surface layer and the base layer, and a short construction conservation period, short time before traffic opening, excellent economic performance.
    Type: Application
    Filed: January 19, 2017
    Publication date: February 15, 2018
    Inventors: Ke ZHONG, Yifei WU, Sang LUO, Bo CHEN, Guoqiang LIU, Xiaochen MA, Jing DING, Chengyong HU, Guanghua YUE, Ronghua CHANG