Abstract: A semiconductor device and a method for making it are disclosed. The semiconductor device includes a first substrate having a front side and a backside opposite thereto, wherein a device structure is formed at the front side of the first substrate, and a DTC is formed at the backside of the first substrate; a first insulating layer and a second insulating layer, which are formed on the front side and the backside of the first substrate, respectively; a first interconnect structure and a second interconnect structure, the first interconnect structure formed in the first insulating layer, the second interconnect structure formed in the second insulating layer; and a plug structure formed in the first insulating layer, one end of the plug structure electrically connected to the device structure through the first interconnect structure, the other end of the plug structure electrically connected to the DTC through the second interconnect structure.

Abstract: A semiconductor device and a method for making it are disclosed. The semiconductor device includes a first substrate having a front side and a backside opposite thereto, wherein a device structure is formed at the front side of the first substrate, and a DTC is formed at the backside of the first substrate; a first insulating layer and a second insulating layer, which are formed on the front side and the backside of the first substrate, respectively; a first interconnect structure and a second interconnect structure, the first interconnect structure formed in the first insulating layer, the second interconnect structure formed in the second insulating layer; and a plug structure formed in the first insulating layer, one end of the plug structure electrically connected to the device structure through the first interconnect structure, the other end of the plug structure electrically connected to the DTC through the second interconnect structure.