Patents by Inventor Xiaochuan Bi

Xiaochuan Bi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon IMPATT diode
    Patent number: 10103278
    Abstract: A method to integrate a vertical IMPATT diode in a planar process.
    Type: Grant
    Filed: July 7, 2016
    Date of Patent: October 16, 2018
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Xiaochuan Bi, Tracey L. Krakowski, Doug Weiser
  • Integration of a baritt diode
    Patent number: 9525077
    Abstract: A vertically oriented BARITT diode is formed in an integrated circuit. The BARITT diode has a source proximate to the top surface of the substrate of the integrated circuit, a drift region immediately below the source in the semiconductor material of the substrate, and a collector in the semiconductor material of the substrate immediately below the drift region. A dielectric isolation structure laterally surrounds the drift region, extending from the source to the collector. The source may optionally include a silicon germanium layer or may optionally include a schottky barrier contact.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: December 20, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Xiaochuan Bi, Tracey L Krakowski, Suman Banerjee
  • INTEGRATION OF THE SILICON IMPATT DIODE IN AN ANALOG TECHNOLOGY
    Publication number: 20160322511
    Abstract: A method to integrate a vertical IMPATT diode in a planar process.
    Type: Application
    Filed: July 7, 2016
    Publication date: November 3, 2016
    Inventors: Xiaochuan Bi, Tracey L. Krakowski, Doug Weiser
  • Integration of the silicon IMPATT diode in an analog technology
    Patent number: 9412879
    Abstract: A method to integrate a vertical IMPATT diode in a planar process.
    Type: Grant
    Filed: July 9, 2014
    Date of Patent: August 9, 2016
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Xiaochuan Bi, Tracey L. Krakowski, Doug Weiser
  • INTEGRATION OF THE SILICON IMPATT DIODE IN AN ANALOG TECHNOLOGY
    Publication number: 20150021740
    Abstract: A method to integrate a vertical IMPATT diode in a planar process.
    Type: Application
    Filed: July 9, 2014
    Publication date: January 22, 2015
    Inventors: Xiaochuan Bi, Tracey Krakowski, Doug Weiser