Patents by Inventor Xiaochuan Xia

Xiaochuan Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200312659
    Abstract: The present invention belongs to the field of semiconductor materials preparation technology, and relates to a preparation method of gallium oxide/copper gallium oxide heterojunction. In this method, the gallium oxide is pre-treated before the copper source is deposited on the pre-treated gallium oxide, or directly cover the copper source layer on the pretreated gallium oxide. Then, the gallium oxide with copper source is placed in a high temperature furnace in proper form and then heat treated for a certain time under certain conditions, so that the copper atomics can be controlled to diffuse into gallium oxide to form corresponding copper-gallium-oxygen alloys. Further the copper-gallium-oxygen alloys forms gallium oxide/copper gallium oxide heterojunction having good interfacial properties with gallium oxide which does not undergo copper diffusion. The advantage is that the high quality copper gallium oxide material can be prepared. The required equipment and process are simple and controllable.
    Type: Application
    Filed: December 19, 2018
    Publication date: October 1, 2020
    Inventors: Hongwei LIANG, Xiaochuan XIA, Heqiu ZHANG
  • Patent number: 10768316
    Abstract: An X-ray detector based on silicon carbide single crystal as well as its preparation method. The detector mainly includes: high resistivity silicon carbide single crystal, high electron concentration n-type silicon carbide layer, low electron concentration n-type silicon carbide layer, high hole concentration p-type silicon carbide layer, low hole concentration p-type silicon carbide layer, silicon dioxide protection layer, p-type silicon carbide ohmic contact electrode, n-type silicon carbide ohmic contact electrode, and gold lead electrode. The invention provides an effective and simple process manufacturing technology, solves the preparation problem of silicon carbide-based high-energy X-ray detector, and realizes the development of a new silicon carbide radiation detector.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: September 8, 2020
    Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
    Inventors: Hongwei Liang, Xiaochuan Xia, Heqiu Zhang
  • Publication number: 20200233103
    Abstract: An X-ray detector based on silicon carbide single crystal as well as its preparation method. The detector mainly includes: high resistivity silicon carbide single crystal, high electron concentration n-type silicon carbide layer, low electron concentration n-type silicon carbide layer, high hole concentration p-type silicon carbide layer, low hole concentration p-type silicon carbide layer, silicon dioxide protection layer, p-type silicon carbide ohmic contact electrode, n-type silicon carbide ohmic contact electrode, and gold lead electrode. The invention provides an effective and simple process manufacturing technology, solves the preparation problem of silicon carbide-based high-energy X-ray detector, and realizes the development of a new silicon carbide radiation detector.
    Type: Application
    Filed: April 12, 2018
    Publication date: July 23, 2020
    Inventors: Hongwei LIANG, Xiaochuan XIA, Heqiu ZHANG
  • Patent number: 10615038
    Abstract: The invention belongs to the technical field of semiconductor material preparation, and in particular provides a preparation method of tin doped n-type gallium oxide. To pre-deposit the appropriate tin doping source on gallium oxide materials in proper ways. The gallium oxide material is then placed in a high temperature tube in an appropriate manner. Then the tin atoms can be controlled to diffuse into the gallium oxide material by heat treatment at a certain temperature for a period of time. Then the tin atoms can be activated as an effective donor to realize the n-type doping of the gallium oxide material. In this invention, the doping can be realized after the preparation of the gallium oxide material is completed, and the necessary equipment and process are simple, and the doping controllability is high.
    Type: Grant
    Filed: March 26, 2017
    Date of Patent: April 7, 2020
    Assignee: DALIAN UNIVERSITY OF TECHNOLOGY
    Inventors: Hongwei Liang, Xiaochuan Xia, Heqiu Zhang
  • Publication number: 20190252191
    Abstract: The invention belongs to the technical field of semiconductor material preparation, and in particular provides a preparation method of tin doped n-type gallium oxide. To pre-deposit the appropriate tin doping source on gallium oxide materials in proper ways. The gallium oxide material is then placed in a high temperature tube in an appropriate manner. Then the tin atoms can be controlled to diffuse into the gallium oxide material by heat treatment at a certain temperature for a period of time. Then the tin atoms can be activated as an effective donor to realize the n-type doping of the gallium oxide material. In this invention, the doping can be realized after the preparation of the gallium oxide material is completed, and the necessary equipment and process are simple, and the doping controllability is high.
    Type: Application
    Filed: March 26, 2017
    Publication date: August 15, 2019
    Inventors: Hongwei LIANG, Xiaochuan XIA, Heqiu ZHANG