Abstract: Corner rounding and image shortening is substantially reduced in an image printed on a substrate by illuminating a photolithographic mask and projecting light transmitted through the photolithographic mask onto the substrate using an optical projection system. The photolithographic mask has a mask pattern that includes at least one printable feature having at least one corner. Incorporated, in the mask pattern, is at least one line feature corresponding to the corner of the printable feature. The line feature is in at least close proximity to the corresponding corner of the printable feature and has a line width that is smaller than a minimum resolution of the optical projection system.

Abstract: A process of eliminating resist footing on a hardmask when preparing a semiconductor wafer stack, comprising: a) depositing a layer of hardmask material on a substrate; b) subjecting the hardmask to oxygen under conditions sufficient to produce an oxide cap layer and provide a hardmask/oxide cap layer with a substrate reflectivity below 0.8%; c) forming a layer of SiO2 on the hardmask/oxide cap layer; d) forming a layer of photoresist on the layer of SiO2; e) patterning and developing the layer of photoresist by exposing photoresist; and f) etching exposed portions of the layer of hardmask/oxide cap layer/SiO2 layer to obtain a semiconductor wafer stack with no standing waves and free from resist footing.

Abstract: Corner rounding and image shortening is substantially reduced in an image printed on a substrate by illuminating a photolithographic mask and projecting light transmitted through the photolithographic mask onto the substrate using an optical projection system. The photolithographic mask has a mask pattern that includes at least one printable feature having at least one corner. Incorporated, in the mask pattern, is at least one line feature corresponding to the corner of the printable feature. The line feature is in at least close proximity to the corresponding corner of the printable feature and has a line width that is smaller than a minimum resolution of the optical projection system.

Abstract: A lithography method for use in the manufacture of semiconductor devices, which prevents lithographic exposure of a periphery region or edge region of a semiconductor wafer and which prevents the formation of black silicon related particle contamination in a patterned region on the periphery region as a result of, e.g., a deep trench manufacturing process. A quencher solution is applied at peripheral areas of the wafer on which a photoresist layer is formed. The quencher solution neutralizes acid generated in the photoresist when the photoresist is exposed to radiation, thereby preventing the photoresist on the peripheral region of the wafer to dissolve during a subsequent developing process.

Abstract: A lithography method for use in the manufacture of semiconductor devices, which prevents lithographic exposure of a periphery region or edge region of a semiconductor wafer and which prevents the formation of black silicon related particle contamination in a patterned region on the periphery region as a result of, e.g., a deep trench manufacturing process. A quencher solution is applied at peripheral areas of the wafer on which a photoresist layer is formed. The quencher solution neutralizes acid generated in the photoresist when the photoresist is exposed to radiation, thereby preventing the photoresist on the peripheral region of the wafer to dissolve during a subsequent developing process.

Abstract: A process of eliminating resist footing on a hardmask when preparing a semiconductor wafer stack, comprising:

Abstract: A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.

Abstract: A resist layer is deposited atop a substrate and is patterned to expose portions of a substrate. A hardmask layer is deposited atop the patterned resist layer and atop the exposed portions of the substrate. The patterned resist layer is removed so that only a portion of the hardmask layer that is atop the substrate remains.

Abstract: A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.

Abstract: A polarized organic photonics device, including an LED or photovoltaic device, is comprised of a first conductive layer or electrode coated with a friction transferred alignment material, a photoactive material, and a second electrically conductive layer or electrode. The alignment material provides for the orientation of the subsequently deposited photoactive material such that the photoactive material interacts with or emits light preferentially along a selected polarization axis. Additional layers and sublayers optimize and tune the optical and electronic responses of the device.