Abstract: An embedded storage chip data storage method, an embedded storage chip, and a data storage system are provided. The embedded storage chip data storage method preferentially connects a first data storage channel and a host terminal, if the first data storage channel is connected to the host terminal, the first data storage channel specifies a first target storage area according to data information sent by the host terminal to store the data information sent by the host terminal; otherwise, a second data storage channel is connected to the host terminal, and the second data storage channel specifies a second target storage area according to the data information sent by host terminal to store the data information sent by the host terminal.

Abstract: A display panel includes: a substrate; a light emitting unit located on the substrate; and one or more combinational structure layers located on a side of the light emitting unit away from the substrate, each of the combinational structure layers includes a first structure layer, a second structure layer and a third structure layer, a refractive index of the first structure layer is greater than a refractive index of the second structure layer, and the refractive index of the second structure layer is greater than a refractive index of the third structure layer.

Abstract: A display panel and a display apparatus. The display panel includes: a substrate; a light-emitting element disposed on the substrate; an encapsulation layer on a side of the light-emitting element away from the substrate, where the encapsulation layer includes a first inorganic film layer, a first auxiliary film layer and an organic film layer stacked on the light-emitting element, an absolute value of a difference between a refractive index of the first inorganic film layer and a refractive index of the first auxiliary film layer is less than or equal to 0.05, and an extinction coefficient of the first auxiliary film layer for visible light is less than an extinction coefficient of the first inorganic film layer for visible light.

Abstract: A charge pump circuit and phase-locked loop include start, bias, current mirror, charging and discharging feedback control, and charging and discharging matching modules, which are electrically connected in sequence. The start module starts the bias module. The bias module generates constant bias current and outputs same to the current mirror module, which receives and amplifies the bias current for output in two paths. The charging and discharging feedback control module detects the output voltage of a charge pump and controls, according to feedback of the output voltage, the current in the charging and discharging matching module, to suppress the mismatch between charging and discharging currents. The charging and discharging matching module receives an external charging or discharging control signal, to charge or discharge the output load of the charge pump. Charging and discharging currents can be matched within a wide output voltage range, without an operational amplifier.

Abstract: A charge pump circuit and phase-locked loop include start, bias, current mirror, charging and discharging feedback control, and charging and discharging matching modules, which are electrically connected in sequence. The start module starts the bias module. The bias module generates constant bias current and outputs same to the current mirror module, which receives and amplifies the bias current for output in two paths. The charging and discharging feedback control module detects the output voltage of a charge pump and controls, according to feedback of the output voltage, the current in the charging and discharging matching module, to suppress the mismatch between charging and discharging currents. The charging and discharging matching module receives an external charging or discharging control signal, to charge or discharge the output load of the charge pump. Charging and discharging currents can be matched within a wide output voltage range, without an operational amplifier.

Abstract: The invention relates to an AlGaN/GaN HEMT small-signal model and a method for extracting parameters thereof. According to the AlGaN/GaN HEMT small-signal model of the invention, based on a conventional AlGaN/GaN HEMT small-signal model, a first coplanar waveguide capacitor (I) between a gate and a source and a second coplanar waveguide capacitor (II) between the gate and a drain are added in a parasitic unit. Since an AlGaN/GaN HEMT device and a coplanar waveguide device have similar structures, by introducing the first coplanar waveguide capacitor (I) and the second coplanar waveguide capacitor (II) under a high-frequency condition, that is, considering the fact that the coplanar waveguide effect of the AlGaN/GaN HEMT device will introduce additional parasitic capacitances, the working state and device characteristics of the AlGaN/GaN HEMT device can be reflected more accurately, and the accuracy of the device model is improved.