Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Abstract: Some embodiments of the invention include a pagophobic coating assembly including a wick layer coupled an outer layer. The wick layer includes a fluid reservoir with an antifreeze material. The wick can be a hydrophilic or superhydrophilic material, and the outer layer can include a superhydrophobic or omniphobic material. In some embodiments, the wick includes a nylon-based polymer, and the outer layer includes a silicone or siloxane based polymer. In some embodiments of the invention, the antifreeze material includes an alkylene glycol. In some embodiments, the wick layer can enable the antifreeze material to migrate from the wick layer into the outer layer, and the outer layer is configured to enable the antifreeze to migrate to the upper surface of the outer layer. Some embodiments include an article of manufacture including the pagophobic coating assembly. Some further embodiments of the invention include a method of forming the pagophobic coating assembly.