Abstract: In the field of biomedical technology, a PIWI-interacting RNA piR-hsa-211106 is used to prepare a targeted therapeutic drug for inhibiting proliferation of lung adenocarcinoma cells. A mechanism is as follows: after the PIWI-interacting RNA piR-hsa-211106 is constructed into an agonist or a transformant, the agonist or the transformant inhibits a tricarboxylic acid cycle process by down-regulating an expression of a pyruvate carboxylase, inhibits an energy metabolism, promotes apoptosis of the lung adenocarcinoma cells, thus inhibits growth of the lung adenocarcinoma. The PIWI-interacting RNA piR-hsa-211106 directly acts on a target site and does not produce toxic and side effects and an off-target phenomenon. Large amounts of analysis and in-vivo and in-vitro experiments show that the PIWI-interacting RNA piR-hsa-211106 has high credibility and a remarkable treatment effect, and provides a new research direction for anti-tumor therapy of lung adenocarcinoma.

Abstract: The present disclosure proposes a method of manufacturing a low temperature poly-silicon array substrate, an array substrate and a display panel. The method includes: disposing a substrate, and forming a buffer layer on the substrate; depositing first gas mixture and doped ionized gas by using vapor deposition to form a doped amorphous silicon thin film on the buffer layer; depositing second gas mixture by using vapor deposition to dehydrogenate the amorphous silicon thin film; performing an annealing treatment to the amorphous silicon thin film being dehydrogenated to diffuse dopant ions so as to form a polysilicon layer; and patterning the polysilicon layer.

Abstract: The present disclosure proposes a method of manufacturing a low temperature poly-silicon array substrate, an array substrate and a display panel. The method includes: disposing a substrate, and forming a buffer layer on the substrate; depositing first gas mixture and doped ionized gas by using vapor deposition to form a doped amorphous silicon thin film on the buffer layer; depositing second gas mixture by using vapor deposition to dehydrogenate the amorphous silicon thin film; performing an annealing treatment to the amorphous silicon thin film being dehydrogenated to diffuse dopant ions so as to form a polysilicon layer; and patterning the polysilicon layer.