Abstract: The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may further include a first type shallow trench formed on a passivation layer overlying a semiconductor substrate. The conductive redistribution layer is formed in the first type shallow trench. A polyimide layer may be formed between neighboring conductive redistribution layers should a plurality of the conductive redistribution layers are formed with or without the first type shallow trench formed for each of the plurality of conductive redistribution layers.

Abstract: The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may further include a first type shallow trench formed on a passivation layer overlying a semiconductor substrate. The conductive redistribution layer is formed in the first type shallow trench. A polyimide layer may be formed between neighboring conductive redistribution layers should a plurality of the conductive redistribution layers are formed with or without the first type shallow trench formed for each of the plurality of conductive redistribution layers.