Patents by Inventor Xiaodong Pi

Xiaodong Pi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stripping method and stripping device for silicon carbide single crystal wafers
    Patent number: 11827997
    Abstract: The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.
    Type: Grant
    Filed: November 15, 2022
    Date of Patent: November 28, 2023
    Assignee: ZJU-Hangzhou Global Scientific and Technological Innovation Center
    Inventors: Rong Wang, Wenhao Geng, Xiaodong Pi, Deren Yang
  • Method and device for preferential etching of dislocation of silicon carbide wafer
    Patent number: 11784038
    Abstract: The present disclosure relates to the technical field of silicon carbide processing, and discloses a method and device for preferential etching of dislocation of a silicon carbide wafer. According to the method and device of the present disclosure, a concentration of the etchant is effectively reduced while the high-temperature etching activity is guaranteed, the dislocations on the carbon surface and the silicon surface of the silicon carbide wafer are exposed, and dislocation etching pits with high distinguishing degree are obtained on the carbon surface and the silicon surface of the silicon carbide wafer and thus identified clearly.
    Type: Grant
    Filed: December 21, 2022
    Date of Patent: October 10, 2023
    Assignee: ZJU-Hangzhou Global Scientific and Technological Innovation Center
    Inventors: Jiajun Li, Rong Wang, Xiaodong Pi, Deren Yang
  • Method and Device for Preferential Etching of Dislocation of Silicon Carbide Wafer
    Publication number: 20230123599
    Abstract: The present disclosure relates to the technical field of silicon carbide processing, and discloses a method and device for preferential etching of dislocation of a silicon carbide wafer. According to the method and device of the present disclosure, a concentration of the etchant is effectively reduced while the high-temperature etching activity is guaranteed, the dislocations on the carbon surface and the silicon surface of the silicon carbide wafer are exposed, and dislocation etching pits with high distinguishing degree are obtained on the carbon surface and the silicon surface of the silicon carbide wafer and thus identified clearly.
    Type: Application
    Filed: December 21, 2022
    Publication date: April 20, 2023
    Applicant: ZJU-Hangzhou Global Scientific and Technological Innovation Center
    Inventors: Jiajun Li, Rong Wang, Xiaodong Pi, Deren Yang
  • Stripping Method and Stripping Device for Silicon Carbide Single Crystal Wafers
    Publication number: 20230076324
    Abstract: The present disclosure relates to the field of manufacturing of silicon carbide (SiC) single crystal wafers, and discloses a stripping method and a stripping device for SiC single crystal wafers. The single crystal wafers obtained by the present disclosure have no damage layer or stress residue on surfaces or sub-surfaces, and are simple in operation and low in cost.
    Type: Application
    Filed: November 15, 2022
    Publication date: March 9, 2023
    Applicant: ZJU-Hangzhou Global Scientific and Technological Innovation Center
    Inventors: Rong Wang, Wenhao Geng, Xiaodong Pi, Deren Yang