Abstract: Described herein are compositions comprising RNA origami (RNAOG) which include 5-fluorouracil (5FU) or analogues thereof are described which can be used to both directly treat a cancer by inhibiting a biochemical pathway overexpressed in a cancer cell and indirectly treat a cancer by inducing an anti-cancer immune response. Also described herein are methods of using said compositions for treating cancer, inducing an anti-cancer immune response, and/or killing a cancer cell.

Abstract: A display panel and display apparatus, display panel includes an array substrate. Array substrate includes substrate and has display region. Display region includes color filter, pixel electrode, and first transistor that are located on same side of substrate. First transistor includes first semiconductor layer. Along direction perpendicular to plane of substrate, color filter is located between first semiconductor layer and pixel electrode, and first semiconductor layer is electrically connected to pixel electrode through first connecting portion. First connecting portion includes first connecting sub-portion in first connecting hole. Orthographic projection of first connecting sub-portion on plane of substrate does not overlap with orthographic projection of color filter on plane of substrate. Along direction parallel to plane of substrate, first connecting sub-portion at least partially overlaps with color filter.

Abstract: A heating module, a heat dissipation apparatus, and a communication device. The heating module includes an enclosure, a first heating component, and a floating cover. The first heating component is disposed in the enclosure, the enclosure has an opening, and the floating cover has a first boss. The first boss extends into the opening. The floating cover is mounted on the enclosure via a first elastic member, and the first elastic member drives the first boss to apply first pressure to the first heating component.

Abstract: A cover plate structure for a glass fiber tank furnace forehearth includes chest wall bricks at two sides of the forehearth, cover plate bricks each spanning between a top end of at least one of the chest wall bricks at one of the two sides of the forehearth and a top end of at least one of the chest wall bricks at another one of the two sides of the forehearth, a thermal insulation layer covering outer surfaces of the cover plate bricks and the chest wall bricks, and a gap-covering brick fixed between the cover plate bricks and the thermal insulation layer and covering a gap between adjacent ones of the cover plate bricks.

Abstract: This invention in one aspect relates to a mixed-kernel heterojunction transistor, comprising a monolayer film formed of an atomically thin material, and a network of carbon nanotubes (CNTs) vertically stacked over the monolayer film to define an overlap region of the CNT network with the monolayer film, and non-overlap regions of the monolayer film and the CNT network, wherein the overlap region is a mixed-kernel van der Waals heterojunction.

Abstract: A cell handover method, a terminal device, and a network device are provided. The method includes: sending Secondary Cell Group (SCG) suspend status information to a target node. The SCG suspend status information is used for indicating that a User Equipment (UE) is in an SCG suspended state.

Abstract: A method for audio signal noise cancellation is provided. In response to current noise cancellation coefficients being required to be updated to new noise cancellation coefficients, the digital signal processor calculates the new noise cancellation coefficients and writes the new noise cancellation coefficients into an idle storage module in the at least two storage modules, and the digital signal processor sends an update request for updating the noise cancellation coefficients to the active noise cancellation module. The update request carries position information configured to indicate a position of the storage module to which the new noise cancellation coefficients is written.

Abstract: A method for audio signal noise cancellation is provided. In response to current noise cancellation coefficients being required to be updated to new noise cancellation coefficients, the digital signal processor calculates the new noise cancellation coefficients and writes the new noise cancellation coefficients into an idle storage module in the at least two storage modules, and the digital signal processor sends an update request for updating the noise cancellation coefficients to the active noise cancellation module. The update request carries position information configured to indicate a position of the storage module to which the new noise cancellation coefficients is written.

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.