Abstract: In a control method for overlay accuracy, whether a similar layer of a present layer exists is determined first, where both the present layer and the similar layer are aligned relative to a same reference layer, and overlay accuracy requirements of both the present layer and the similar layer are relative to the reference layer; if so, an overlay error compensation value of a present batch of wafers at the present layer is determined according to an overlay error value of the present batch of wafers at the similar layer and/or an overlay error value of a previous batch of wafers at the similar layer; and a photoetching process is performed on the present layer of the present batch of wafers by means of the overlay error compensation value of the present batch of wafers at the present layer.

Abstract: Provided are an exposure method and an exposure device. The method includes: extracting an exposure rule of a first layer pattern or a previous layer pattern of each wafer in the current wafer group; acquiring the serial number of at least one absent wafer in the current wafer group according to actual exposure information of the current layer pattern of each wafer in the current wafer group; removing the serial number of at least one absent wafer in the exposure rule of the current layer pattern, sequentially advancing the serial number of a wafer having the serial number posterior to the serial number of each of the at least one absent wafer in a sequence corresponding to the same bearing platform, and filling serial number vacancies to obtain the exposure rule of the current layer pattern; and exposing the current layer pattern of each wafer in the current wafer group.

Abstract: In a control method for overlay accuracy, whether a similar layer of a present layer exists is determined first, where both the present layer and the similar layer are aligned relative to a same reference layer, and overlay accuracy requirements of both the present layer and the similar layer are relative to the reference layer; if so, an overlay error compensation value of a present batch of wafers at the present layer is determined according to an overlay error value of the present batch of wafers at the similar layer and/or an overlay error value of a previous batch of wafers at the similar layer; and a photoetching process is performed on the present layer of the present batch of wafers by means of the overlay error compensation value of the present batch of wafers at the present layer.

Abstract: The present disclosure relates to a fluorescent powder and a light-emitting device including the same. The fluorescent powder includes an inorganic compound. The inorganic compound contains components including an element M, an element A, an element D, an element E, and an element R. The element M is selected from Eu, Ce, Mn, Tb, Dy, and Tm, the element A is selected from Mg, Ca, Sr, and Ba, the element D is selected from B, Al, Ga, In, La, Gd, Sc, Lu, and Y, the element E is selected from Si, Ge, Zr, and Hf, and the element R is at least two elements selected from N, O, F, and Cl. In a powder X-Ray Diffraction (XRD) spectrum with CoK? radiation, the inorganic compound at least has diffraction peaks within ranges of an Bragg angle (2?) from 27.3° to 28.3°, 29.7° to 30.7°, 41.9° to 42.9°, and 43.5° to 44.5°.

Abstract: The present disclosure relates to a fluorescent powder and a light-emitting device including the same. The fluorescent powder includes an inorganic compound. The inorganic compound contains components including an element M, an element A, an element D, an element E, and an element R. The element M is selected from Eu, Ce, Mn, Tb, Dy, and Tm, the element A is selected from Mg, Ca, Sr, and Ba, the element D is selected from B, Al, Ga, In, La, Gd, Sc, Lu, and Y, the element E is selected from Si, Ge, Zr, and Hf, and the element R is at least two elements selected from N, O, F, and Cl. In a powder X-Ray Diffraction (XRD) spectrum with CoK? radiation, the inorganic compound at least has diffraction peaks within ranges of an Bragg angle (2?) from 27.3° to 28.3°, 29.7° to 30.7°, 41.9° to 42.9°, and 43.5° to 44.5°.

Abstract: There is provided a near duplicate video detection system. The system includes (a) a video clip acquisition module arranged to produce a video clip in machine readable data format defining a plurality of frames, (b) an image feature extractor in communication with the video clip acquisition module arranged to perform image feature extraction in respect of the frames and produce corresponding image feature extraction data in electronic format, (c) a feature vector generator in communication with the image feature extractor arranged to process the image feature extraction data to produce feature vector data in an electronic format corresponding to each of the frames, and (d) a summarization module responsive to the feature vector generator and arranged to convert the feature vector data into a summarization of the video clip in machine readable format.