Abstract: Disclosed herein are electronic devices that include arrays of dual function light transmit and receive pixels. The pixels of such arrays include a photodetector (PD) structure and a vertical-cavity, surface-emitting laser (VCSEL) diode, both formed in a common stack of epitaxial semiconductor layers. The pixels of the array may be configured by a controller or processor to function either as a light emitter by biasing the VCSEL diode, or as a light detector or receiver by a different bias applied to the PD structure, and this functionality may be altered in time. The array of dual function pixels may be positioned interior to an optical display of an electronic device, in some cases to provide depth sensing or autofocus. The array of pixels may be registered with a camera of an electronic device, such as to provide depth sensing or autofocus.

Abstract: The present invention discloses a fabrication method and use of a ?40 mm large-size and high-contrast fiber optic image inverter, belonging to the field of manufacturing of fiber optic imaging elements. The light-absorbing glass for preparing the ?40 mm large-size and high-contrast fiber optic image inverter consists of the following components in molar percentage: SiO2 60-69.9, Al2O3 1.0-10.0, B2O3 10.1-15.0, Na2O 1.0-8.0, K2O 3.0-10.0, MgO 0.1-1.0, CaO 0.5-5.0, ZnO 0-0.1, TiO2 0-0.1, ZrO2 0.1-1.0, Fe2O3 3.0-6.5, Co2O3 0.1-0.5, V2O5 0.51-1.5 and MoO3 0.1-1.0. The fiber optic image inverter has the advantages of low crosstalk of stray light, high resolution and high contrast.

Abstract: A multispectral sensing device includes a first die, including silicon, which is patterned to define a first array of sensor elements, which output first electrical signals in response to optical radiation that is incident on the device in a band of wavelengths less than 1000 nm that is incident on the front side of the first die. A second die has its first side bonded to the back side of the first die and includes a photosensitive material and is patterned to define a second array of sensor elements, which output second electrical signals in response to the optical radiation that is incident on the device in a second band of wavelengths greater than 1000 nm that passes through the first die and is incident on the first side of the second die. Readout circuitry reads the first electrical signals and the second electrical signals serially out of the device.

Abstract: This disclosure provides multispecific and multivalent antigen binding proteins. In one aspect, the disclosure provides a multispecific antigen binding protein, comprising a first antigen binding site comprising a first VHH that specifically binds to a first epitope; and a second antigen binding site that specifically binds to a second epitope.

Abstract: Disclosed herein are global shutter image sensors and methods of operating such image sensors. An image sensor includes a semiconductor wafer having a light receiving surface opposite an electrical connection surface; an oxide extending from the light receiving surface toward the electrical connection surface and at least partially surrounding a pixel region; a photodiode disposed within the pixel region; and a set of storage nodes disposed under the photodiode, between the photodiode and the electrical connection surface. The set of storage nodes comprises a first storage node and a second storage node. The storage nodes may be disposed vertically beneath the photodiode, or side by side.

Abstract: Disclosed herein are photodetectors using arrays of pixels with single-photon avalanche diodes (SPADs). The pixel arrays may have configurations that include one or more control transistors for each SPAD collocated on the same chip or wafer as the pixels and located on a surface of the wafer opposite to the light gathering surface of the pixel arrays. The control transistors may be positioned or configured for interconnection with a logic chip that is bonded to the wafer of the pixel array. The pixels may be formed in a substrate having doping gradient. The control transistors may be positioned on or within the SPADs, or adjacent to, but isolated from, the SPADs. Isolation between the individual SPADs and the respective control transistors may make use of shallow trench isolation regions or deep trench isolation regions.

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

Abstract: Techniques for determining character string differences between a target character string and one or more candidate character strings are provided. In some implementations, a target bitmap is produced for the target character string and a target bitmap weight is calculated. A candidate bitmap and a candidate bitmap weight associated with a candidate character string is obtained. In response to determining that the candidate bitmap weight differs from the target bitmap weight by less than a first threshold value, an exclusive OR operation is performed between the target bitmap and the candidate bitmap. In response to determining that number of ones in the result of the exclusive OR is less than a second threshold value, the candidate character string is included in a character set that includes one or more character strings that are close to the target character string.

Abstract: One or more cross-wafer capacitors are formed in an electronic component, circuit, or device that includes stacked wafers. One example of such a device is a stacked image sensor. The image sensor can include two or more wafers, with two wafers that are bonded to each other each including a conductive segment adjacent to, proximate, or abutting a bonding surface of the respective wafer. The conductive segments are positioned relative to each other such that each conductive element forms a plate of a capacitor. A cross-wafer capacitor is formed when the two wafers are attached to each other.

Abstract: Provided herein are methods of preparing a template nucleic acid for next-generation sequencing. The methods comprise performing primer extension using c7dGTP instead of dGTP, which then allows for the input nucleic acids to be selectively digested by c7dGTP-resistant restriction enzymes, thereby enriching the template nucleic acid prior to next-generation sequencing library preparation.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node.

Abstract: A sensor stack is described. The sensor stack includes first and second electromagnetic radiation sensors. The first electromagnetic radiation sensor has a high quantum efficiency for converting a first range of electromagnetic radiation wavelengths into a first set of electrical signals. The second electromagnetic radiation sensor is positioned in a field of view of the first electromagnetic radiation sensor and has a high quantum efficiency for converting a second range of electromagnetic radiation wavelengths into a second set of electrical signals and a low quantum efficiency for converting the first range of electromagnetic radiation wavelengths into the second set of electrical signals. The first range of wavelengths does not overlap the second range of wavelengths, and the second electromagnetic radiation sensor is at least partially transmissive to the first range of electromagnetic radiation wavelengths.

Abstract: The present application provides example website login methods and apparatuses. One example method includes identifying a website jump trigger indication to jump from a first website to a second website. A first token is then obtained from a cookie store of the web browser, the first token associated with a website identifier of the second website and a device fingerprint indicating a running environment at a time when the password-free proxy login was previously set. In response to determining that a current running environment corresponds to the device fingerprint, a second token corresponding to the first token is obtained, wherein the second token comprises an access token indicating that the second website grants password-free login permissions. A password-free login request is sent to the second website including the second token. In response to the second website verifying the second token, the second website is logged into without a password.

Abstract: The present application provides example website login methods and apparatuses. One example method includes identifying a website jump trigger indication to jump from a first website to a second website. A first token is then obtained from a cookie store of the web browser, the first token associated with a website identifier of the second website and a device fingerprint indicating a running environment at a time when the password-free proxy login was previously set. In response to determining that a current running environment corresponds to the device fingerprint, a second token corresponding to the first token is obtained, wherein the second token comprises an access token indicating that the second website grants password-free login permissions. A password-free login request is sent to the second website including the second token. In response to the second website verifying the second token, the second website is logged into without a password.

Abstract: A back-illuminated single-photon avalanche diode (SPAD) image sensor includes a sensor wafer stacked vertically over a circuit wafer. The sensor wafer includes one or more SPAD regions, with each SPAD region including an anode gradient layer, a cathode region positioned adjacent to a front surface of the SPAD region, and an anode avalanche layer positioned over the cathode region. Each SPAD region is connected to a voltage supply and an output circuit in the circuit wafer through inter-wafer connectors. Deep trench isolation elements are used to provide electrical and optical isolation between SPAD regions.

Abstract: Systems and methodologies for accessing resources associated with a Web-based application in accordance with one or more embodiments disclosed herein may include a browser that obtains at least first resources from a first domain and second resources from a second domain and a resource management component that facilitates controlled communication between the first resources and the second resources and prevents the first resources and the second resources from accessing other resources that the first resources and the second resources are not permitted to access. The resource management component may be further operable to contain restricted services in a sandbox containment structure and/or to isolate access-controlled resources in a service instance. In addition, the resource management component may be operable to facilitate the flexible display of resources from disparate domains and/or controlled communication therebetween.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.

Abstract: The present application provides example website login methods and apparatuses. One example method includes identifying a website jump trigger indication to jump from a first website to a second website. A first token is then obtained from a cookie store of the web browser, the first token associated with a website identifier of the second website and a device fingerprint indicating a running environment at a time when the password-free proxy login was previously set. In response to determining that a current running environment corresponds to the device fingerprint, a second token corresponding to the first token is obtained, wherein the second token comprises an access token indicating that the second website grants password-free login permissions. A password-free login request is sent to the second website including the second token. In response to the second website verifying the second token, the second website is logged into without a password.

Abstract: An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.