Patents by Inventor Xiaofeng Qiu
Xiaofeng Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240080100Abstract: A broadband radio frequency signal optical fiber phase-stable transmission system includes a local end and a remote end connected by a dispersion compensation module and an optical fiber. The local end modulates a first auxiliary signal whose frequency is half of the frequency of the to-be-transmitted signal and a second auxiliary signal whose frequency is 1.5 times the frequency of the to-be-transmitted signal through the optical carrier and filters out a lower sideband to obtain an optical signal containing only the optical carrier, a first signal, and a second signal corresponds to the optical signal of the first-order upper sideband. The optical signal is transmitted to the remote end through the dispersion compensation module and the optical fiber.Type: ApplicationFiled: September 2, 2022Publication date: March 7, 2024Inventors: Xiaofeng Jin, Yaoqi Xu, Jichen Qiu, Xiaohuan Sun, Xianbin Yu, Xiangdong Jin, Yinfang Xie
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Patent number: 10453751Abstract: A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.Type: GrantFiled: February 14, 2017Date of Patent: October 22, 2019Assignee: GLOBALFOUNDRIES INC.Inventors: Xiaofeng Qiu, Michael V. Aquilino, Patrick D. Carpenter, Jessica Dechene, Ming Hao Tang, Haigou Huang, Huy Cao
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Publication number: 20180261510Abstract: A tone inversion method for integrated circuit (IC) fabrication includes providing a substrate with a layer of amorphous carbon over the substrate and a patterning layer over the amorphous carbon layer. The patterning layer is etched to define a first pattern of raised structures and a complementary recessed pattern that is filled with a layer of image reverse material. The first pattern of raised structures is then removed to define a second pattern of structures comprising the image reverse material. A selective etching step is used to transfer the second pattern into a dielectric layer disposed between the layer of amorphous carbon and the substrate.Type: ApplicationFiled: February 14, 2017Publication date: September 13, 2018Applicant: GLOBALFOUNDRIES INC.Inventors: Xiaofeng QIU, Michael V. AQUILINO, Patrick D. CARPENTER, Jessica DECHENE, Ming Hao TANG, Haigou HUANG, Huy CAO
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Patent number: 10014298Abstract: In a method for forming an integrated circuit (IC) structure, which incorporates multiple field effect transistors (FETs) with discrete replacement metal gates (RMGs) and replacement metal contacts (RMCs), gate cut trench(es) and contact cut trench(es) are formed at the same process level. These trench(es) are then filled at the same time with the same isolation material to form gate cut isolation region(s) for electrically isolating adjacent RMGs and contact cut isolation region(s) for electrically isolating adjacent RMCs, respectively. The selected isolation material can be a low-K isolation material for optimal performance. Furthermore, since the same process step is used to fill both types of trenches, only a single chemical mechanical polishing (CMP) process is needed to remove the isolation material from above the gate level, thereby minimizing gate height loss and process variation. Also disclosed herein is an IC structure formed according to the method.Type: GrantFiled: December 18, 2017Date of Patent: July 3, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Hui Zang, Haigou Huang, Xiaofeng Qiu
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Patent number: 9922972Abstract: A lithography method and accompanying structure for decreasing the critical dimension (CD) and improving the CD uniformity within semiconductor devices uses a layer of silicon carbide as an embedded blocking mask for defining semiconductor architectures, including contact trench openings to form trench silicide contacts.Type: GrantFiled: April 19, 2017Date of Patent: March 20, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Xiaofeng Qiu, Haigou Huang, Chang Ho Maeng
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Patent number: 9911736Abstract: In a method for forming an integrated circuit (IC) structure, which incorporates multiple field effect transistors (FETs) with discrete replacement metal gates (RMGs) and replacement metal contacts (RMCs), gate cut trench(es) and contact cut trench(es) are formed at the same process level. These trench(es) are then filled at the same time with the same isolation material to form gate cut isolation region(s) for electrically isolating adjacent RMGs and contact cut isolation region(s) for electrically isolating adjacent RMCs, respectively. The selected isolation material can be a low-K isolation material for optimal performance. Furthermore, since the same process step is used to fill both types of trenches, only a single chemical mechanical polishing (CMP) process is needed to remove the isolation material from above the gate level, thereby minimizing gate height loss and process variation. Also disclosed herein is an IC structure formed according to the method.Type: GrantFiled: June 14, 2017Date of Patent: March 6, 2018Assignee: GLOBALFOUNDRIES INC.Inventors: Hui Zang, Haigou Huang, Xiaofeng Qiu
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Patent number: 8920767Abstract: An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.Type: GrantFiled: August 19, 2011Date of Patent: December 30, 2014Assignee: UT-Battelle, LLCInventors: Xiaofeng Qiu, Mariappan Parans Paranthaman, Miaofang Chi, Ilia N. Ivanov, Zhenyu Zhang
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Patent number: 8856581Abstract: The present invention provides a method for resource information backup operation based on peer to peer network, comprising: an initiating node sending an out-of-domain backup node determining request to a connecting node in backup domain, and said out-of-domain backup node determining request including the resource global identifier of said resource information to be backed up, and the connecting node in said backup domain and said host node in which the resource information is saved have different domain identifiers; the connecting node in said backup domain determining an out-of-domain backup node according to information of said resource global identifier and out-of-domain backup rules, and sending routing information of said out-of-domain backup node to said initiating node; and said initiating node sending an out-of-domain backup operation request to said out-of-domain backup node according to said routing information, and said out-of-domain backup node implementing corresponding processing according toType: GrantFiled: April 7, 2010Date of Patent: October 7, 2014Assignee: ZTE CorporationInventors: Yonglin Peng, Quanjun Tao, Yonghui Zhang, Xiaofeng Qiu, Zhenyu Lei, Chunhong Zhang, Lichun Li, Yan Wang, Wei Mi
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Publication number: 20130312831Abstract: Techniques for enhancing energy conversion efficiency in chalcogenide-based photovoltaic devices by improved grain structure and film morphology through addition of urea into a liquid-based precursor are provided. In one aspect, a method of forming a chalcogenide film includes the following steps. Metal chalcogenides are contacted in a liquid medium to form a solution or a dispersion, wherein the metal chalcogenides include a Cu chalcogenide, an M1 and an M2 chalcogenide, and wherein M1 and M2 each include an element selected from the group consisting of: Ag, Mn, Mg, Fe, Co, Cd, Ni, Cr, Zn, Sn, In, Ga, Al, and Ge. At least one organic additive is contacted with the metal chalcogenides in the liquid medium. The solution or the dispersion is deposited onto a substrate to form a layer. The layer is annealed at a temperature, pressure and for a duration sufficient to form the chalcogenide film.Type: ApplicationFiled: June 1, 2012Publication date: November 28, 2013Applicant: International Business Machines CorporationInventors: David Brian Mitzi, Xiaofeng Qiu
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Publication number: 20130316519Abstract: Techniques for enhancing energy conversion efficiency in chalcogenide-based photovoltaic devices by improved grain structure and film morphology through addition of urea into a liquid-based precursor are provided. In one aspect, a method of forming a chalcogenide film includes the following steps. Metal chalcogenides are contacted in a liquid medium to form a solution or a dispersion, wherein the metal chalcogenides include a Cu chalcogenide, an M1 and an M2 chalcogenide, and wherein M1 and M2 each include an element selected from the group consisting of: Ag, Mn, Mg, Fe, Co, Cd, Ni, Cr, Zn, Sn, In, Ga, Al, and Ge. At least one organic additive is contacted with the metal chalcogenides in the liquid medium. The solution or the dispersion is deposited onto a substrate to form a layer. The layer is annealed at a temperature, pressure and for a duration sufficient to form the chalcogenide film.Type: ApplicationFiled: May 24, 2012Publication date: November 28, 2013Applicant: International Business Machines CorporationInventors: David Brian Mitzi, Xiaofeng Qiu
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Publication number: 20130045383Abstract: An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.Type: ApplicationFiled: August 19, 2011Publication date: February 21, 2013Inventors: Xiaofeng Qiu, Mariappan Parans Paranthaman, Miaofang Chi, Ilia N. Ivanov, Zhenyu Zhang
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Publication number: 20130037111Abstract: Techniques for preparing chalcogen-containing solutions using an environmentally benign borane-based reducing agent and solvents under ambient conditions, as well as application of these solutions in a liquid-based method for deposition of inorganic films having copper (Cu), zinc (Zn), tin (Sn), and at least one of sulfur (S) and selenium (Se) are provided. In one aspect, a method for preparing a chalcogen-containing solution is provided. The method includes the following steps. At least one chalcogen element, a reducing agent and a liquid medium are contacted under conditions sufficient to produce a homogenous solution. The reducing agent (i) contains both boron and hydrogen, (ii) is substantially carbon free and (iii) is substantially metal free.Type: ApplicationFiled: August 10, 2011Publication date: February 14, 2013Applicant: International Business Machines CorporationInventors: David Brian Mitzi, Xiaofeng Qiu
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Publication number: 20120042197Abstract: The present invention provides a method for resource information backup operation based on peer to peer network, comprising: an initiating node sending an out-of-domain backup node determining request to a connecting node in backup domain, and said out-of-domain backup node determining request including the resource global identifier of said resource information to be backed up, and the connecting node in said backup domain and said host node in which the resource information is saved have different domain identifiers; the connecting node in said backup domain determining an out-of-domain backup node according to information of said resource global identifier and out-of-domain backup rules, and sending routing information of said out-of-domain backup node to said initiating node; and said initiating node sending an out-of-domain backup operation request to said out-of-domain backup node according to said routing information, and said out-of-domain backup node implementing corresponding processing according toType: ApplicationFiled: April 7, 2010Publication date: February 16, 2012Inventors: Yonglin Peng, Quanjun Tao, Yonghui Zhang, Xiaofeng Qiu, Zhenyu Lei, Chunhong Zhang, Lichun Li, Yan Wang, Wei Mi