Patents by Inventor Xiaogang Bai

Xiaogang Bai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11788182
    Abstract: A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.
    Type: Grant
    Filed: January 21, 2022
    Date of Patent: October 17, 2023
    Assignee: Lanzhou Institute of Chemical Physics Chinese Academy of Sciences
    Inventors: Peng Wang, Liqiang Chai, Li Qiao, Xiaogang Bai, Xiaoyu Zhao
  • Publication number: 20230326642
    Abstract: A magnet includes a magnet matrix and a bond coating arranged at a surface of the magnet matrix. The bond coating includes a thermosetting adhesive layer and a thermoplastic adhesive layer. The thermosetting adhesive layer includes a foaming agent. The thermosetting adhesive layer and the thermoplastic adhesive layer are arranged in sequence from the surface of the magnet matrix to outside.
    Type: Application
    Filed: June 15, 2023
    Publication date: October 12, 2023
    Inventors: Xiaogang BAI, Haihua YU, Guanghui PAN, Xue HAN
  • Publication number: 20230178274
    Abstract: An anti-corrosion treatment method for preparing sintered NdFeB magnet includes preparing a sintered NdFeB matrix, and applying a heat treatment to the sintered NdFeB matrix in an oxidizing atmosphere containing at least one of alcohol or organic acid. A ratio of oxygen partial pressure to water vapor partial pressure in the oxidizing atmosphere is in a range from 1:1 to 300:1. A temperature for the heat treatment is equal to or lower than 300° C. A time for the heat treatment is in a range from 10 minutes to 200 minutes.
    Type: Application
    Filed: February 1, 2023
    Publication date: June 8, 2023
    Inventors: Xiaogang BAI, Haihua YU, Guanghui PAN, Xue HAN
  • Publication number: 20230052627
    Abstract: A hydrogen-free carbon film polymer lubricating material and a preparation method and use thereof are disclosed. In the method, a graphite target is used as the target material, and a magnetron sputtering deposition is performed on a surface of the polymer substrate, thereby physically depositing and forming a hydrogen-free carbon film on the surface of the polymer substrate, thereby obtaining a hydrogen-free carbon film polymer lubricating material.
    Type: Application
    Filed: January 21, 2022
    Publication date: February 16, 2023
    Inventors: Peng WANG, Liqiang CHAI, Li QIAO, Xiaogang BAI, Xiaoyu ZHAO
  • Publication number: 20220403500
    Abstract: The present disclosure relates to a structural coating and preparation method and use thereof. The structural coating provided in the present disclosure includes a titanium transition layer and platinum-hafnium composite structure layers laminated in sequence on a surface of a substrate; the number of the platinum-hafnium composite structure layer is ?3; the platinum-hafnium composite structure layer includes a hafnium layer and a platinum layer laminated in sequence.
    Type: Application
    Filed: November 17, 2021
    Publication date: December 22, 2022
    Inventors: Peng Wang, Li Qiao, Hong Zhang, Xiaogang Bai
  • Patent number: 10790407
    Abstract: A method and apparatus for fabricating sensor chip assemblies. A photodetector wafer and an optics wafer are bonded to each other. Photodetectors are formed on the photodetector wafer. A circuit wafer is bonded to the photodetector wafer that is bonded to the optics wafer after forming the photodetectors on the photodetector wafer.
    Type: Grant
    Filed: August 6, 2014
    Date of Patent: September 29, 2020
    Assignee: The Boeing Company
    Inventors: Xiaogang Bai, Rengarajan Sudharsanan
  • Patent number: 10128397
    Abstract: A system, method, and apparatus for an avalanche photodiode with an enhanced multiplier layer are disclosed herein. In particular, the present disclosure teaches an avalanche photodiode having a multiplier with alternating layers of one or more quantum wells and one or more spacers. A method of making the avalanche photodiode includes growing the multiplier on a substrate.
    Type: Grant
    Filed: May 21, 2012
    Date of Patent: November 13, 2018
    Assignee: THE BOEING COMPANY
    Inventors: Xiaogang Bai, Ping Yuan, Rengarajan Sudharsanan
  • Publication number: 20160043268
    Abstract: A method and apparatus for fabricating sensor chip assemblies. A photodetector wafer and an optics wafer are bonded to each other. Photodetectors are formed on the photodetector wafer. A circuit wafer is bonded to the photodetector wafer that is bonded to the optics wafer after forming the photodetectors on the photodetector wafer.
    Type: Application
    Filed: August 6, 2014
    Publication date: February 11, 2016
    Inventors: Xiaogang Bai, Rengarajan Sudharsanan
  • Patent number: 8816461
    Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.
    Type: Grant
    Filed: September 13, 2011
    Date of Patent: August 26, 2014
    Assignee: The Boeing Company
    Inventors: Ping Yuan, Xiaogang Bai, Rengarajan Sudharsanan
  • Publication number: 20130062663
    Abstract: A dichromatic photodiode and method for dichromatic photodetection are disclosed. A wide bandgap junction comprises a lattice matched junction operable to detect a first light spectrum. A narrow bandgap junction is coupled to the wide bandgap junction, and comprises a photodiode structure. The narrow bandgap junction is operable to detect a second light spectrum.
    Type: Application
    Filed: September 13, 2011
    Publication date: March 14, 2013
    Inventors: Ping Yuan, Xiaogang Bai, Rengarajan Sudharsanan