Abstract: The present disclosure provides a weakly-confined semiconductor nanocrystal, a preparation method therefor and use thereof. A size of the nanocrystals is larger than an exciton diameter thereof; excitons in the nanocrystal are dynamic excitons, electron-hole Coulomb interaction of the dynamic excitons is insufficient to bind electrons and holes into stable bound excitons at operating temperatures, and the electrons and the holes of the dynamic excitons are constrained by boundaries of the nanocrystal. Since the excitons in the weakly-confined nanocrystals herein possess the characteristics of dynamic excitons, the nanocrystals herein possess unique optical and photoelectric properties distinct from conventional semiconductor nanomaterials. It holds unique value for applications requiring broad-spectrum emission (such as lighting) and significant importance for photovoltaic solar devices, photoelectric detectors, and photocatalysis.

Abstract: Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.

Abstract: This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

Abstract: Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.

Abstract: The present application provides a single photon source device, a preparation method thereof, and applications of the same. The single photon source device includes a first electrode layer, a first carrier transport layer, a quantum dot light-emitting layer, a second carrier transport layer and a second electrode layer which are stacked in sequence, and the quantum dot light-emitting layer comprises an insulating material and quantum dots dispersed in the insulating material, neighbor distance of at least a part of the quantum dots is greater than or equal to the central wavelength of the luminescent spectrum of quantum dots.

Abstract: This present disclosure provides group III-V quantum dots, method for preparing the same. The preparation method comprises: S1, mixing precursor(s) of group III element, a solvent, a surface activation agent, and seeds of group III-V quantum dots to obtain a mixed system; S2, heating the mixed system to a first temperature; and S3, adding precursor(s) of group V element to the mixed system of the first temperature to obtain group III-V quantum dots, wherein, the seed surface of the group III-V quantum dots has a carboxylate ligand, the surface activation agent is acetylacetone or a derivative of acetylacetone or a compound RCOOH with a carboxyl group, and the first temperature is between 120° C. and 200° C.

Abstract: The present application provides a single photon source device, a preparation method thereof, and applications of the same. The single photon source device includes a first electrode layer, a first carrier transport layer, a quantum dot light-emitting layer, a second carrier transport layer and a second electrode layer which are stacked in sequence, and the quantum dot light-emitting layer comprises an insulating material and quantum dots dispersed in the insulating material, neighbor distance of at least a part of the quantum dots is greater than or equal to the central wavelength of the luminescent spectrum of quantum dots.

Abstract: Embodiments disclosed herein relate to group III-V QDs and manufacturing methods thereof. More specifically, the embodiments disclosed herein relate to group III-V QDs that have at least one shell of a group II-VI compound surrounding the group III-V QD core. Thus, the QDs disclosed herein are core/shell QDs and in some embodiments may be a core/shell/shell QD. For example, the group III-V QD core material may be surrounded by a shell of a group II-VI compound, which itself may be surrounded by a shell of a group II-VI compound.

Abstract: Embodiments disclosed herein relate to group III-V QDs and manufacturing methods thereof. More specifically, the embodiments disclosed herein relate to group III-V QDs that have at least one shell of a group II-VI compound surrounding the group III-V QD core. Thus, the QDs disclosed herein are core/shell QDs and in some embodiments may be a core/shell/shell QD. For example, the group III-V QD core material may be surrounded by a shell of a group II-VI compound, which itself may be surrounded by a shell of a group II-VI compound.

Abstract: The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

Abstract: The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

Abstract: Doped semiconductor nanocrystals and methods of making the same are provided.

Abstract: The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

Abstract: The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.

Abstract: A nanocrystal described herein comprises a semiconductor material MX, wherein M is a group II or a group III element and X is a group V or a group VI element to provide a II/VI compound or a III/V compound, the nanocrystal having lateral dimensions and a vertical dimension having the shortest axis, wherein surfaces of the nanocrystal normal or substantially normal to the axis of the vertical dimension comprise a layer of M ions passivated by a counter ion chemical species.

Abstract: Doped semiconductor nanocrystals and methods of making the same are provided.

Abstract: In some embodiments, a nanocrystal described herein comprises a semiconductor material MX, wherein M is a group II or a group III element and X is a group V or a group VI element to provide a II/VI compound or a III/V compound, the nanocrystal having lateral dimensions and a vertical dimension having the shortest axis, wherein surfaces of the nanocrystal normal or substantially normal to the axis of the vertical dimension comprise a layer of M ions passivated by a counter ion chemical species.

Abstract: A method of synthesizing doped semiconductor nanocrystals.

Abstract: A method of synthesizing nanostructures. In one embodiment, the method includes the step of heating a reaction mixture at an elevated temperature, T, for a period of time effective to allow the growth of desired nanostructures. The reaction mixture contains an amount, P, of a carboxylate salt and an amount, L, of a fatty acid ligand, defining a molar ratio of the fatty acid ligand to the carboxylate salt, ?=L/P, and a hydrocarbon solvent. The reaction mixture is characterizable with a critical ligand protection, ?, associating with the chemical structure of the carboxylate salt such that when ?<?, the reaction mixture is in a limited ligand protection (LLP) domain, and when ?>?, the reaction mixture is in a sufficient ligand protection (SLP) domain.

Abstract: The present invention provides new compositions containing nearly monodisperse colloidal core/shell semiconductor nanocrystals with high photoluminescence quantum yields (PL QY), as well as other complex structured semiconductor nanocrystals. This invention also provides new synthetic methods for preparing these nanocrystals, and new devices comprising these compositions. In addition to core/shell semiconductor nanocrystals, this patent application also provides complex semiconductor nanostructures, quantum shells, quantum wells, doped nanocrystals, and other multiple-shelled semiconductor nanocrystals.