Abstract: The disclosed technology provides a semiconductor device, a manufacturing method thereof, and an electronic device including the device. An example semiconductor device includes a substrate; a first device and a second device on the substrate. Each of the first device and the second device include a first source/drain layer, a channel layer, and a second source layer that are sequentially stacked, from bottom to top, on the substrate, and a gate stack around at least a part of an outer periphery of the channel layer, with sidewalls of the respective channel layers of the first device and the second device extending at least partially along different crystal planes or crystal plane families.

Abstract: An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.

Abstract: An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.

Abstract: An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.

Abstract: An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.

Abstract: The disclosed technology provides a semiconductor device, a manufacturing method thereof, and an electronic device including the device. An example semiconductor device includes a substrate; a first device and a second device on the substrate. Each of the first device and the second device include a first source/drain layer, a channel layer, and a second source layer that are sequentially stacked, from bottom to top, on the substrate, and a gate stack around at least a part of an outer periphery of the channel layer, with sidewalls of the respective channel layers of the first device and the second device extending at least partially along different crystal planes or crystal plane families.

Abstract: A direct current circuit breaker, including: n in number circuit breaker modules connected in series, one energy-absorbing and voltage-limiting module connected in parallel to the n in number circuit breaker modules, and a trigger module. The n in number circuit breaker modules each includes a mechanical switch and a commutation branch circuit which are connected in parallel; each commutation branch circuit includes a charging commutation module and a commutation capacitor which are connected in series; the charging commutation module is configured to charge up the commutation capacitor and produce reverse current to cut off the mechanical switch; the one energy-absorbing and voltage-limiting module is configured to absorb energy stored in inductive elements of power systems after a fault current is cut off, so as to limit voltage and protect the mechanical switch, and n is a positive integer greater than or equal to 1.

Abstract: A direct current circuit breaker, including: n in number circuit breaker modules connected in series, one energy-absorbing and voltage-limiting module connected in parallel to the n in number circuit breaker modules, and a trigger module. The n in number circuit breaker modules each includes a mechanical switch and a commutation branch circuit which are connected in parallel; each commutation branch circuit includes a charging commutation module and a commutation capacitor which are connected in series; the charging commutation module is configured to charge up the commutation capacitor and produce reverse current to cut off the mechanical switch; the one energy-absorbing and voltage-limiting module is configured to absorb energy stored in inductive elements of power systems after a fault current is cut off, so as to limit voltage and protect the mechanical switch, and n is a positive integer greater than or equal to 1.