Abstract: A power semiconductor module includes a metal bottom plate, an insulating heat dissipation material layer, a chip, a binding plate, silica gel, and an outer housing, where the binding plate includes a copper plate and a copper strap. The copper plate is connected to the copper strap through welding, and the binding plate is configured to connect circuits of various components. The metal bottom plate is connected to the insulating heat dissipation material layer through tin soldering, the chip is connected to the insulating heat dissipation material layer through tin soldering, the chip is connected to the copper strap, and the copper strap is connected to the insulating heat dissipation material layer. The module can resolve the prior-art problem of mechanical stress generated on the chip in the case of a temperature change when a relatively thick copper frame is applied to the packaging of the power semiconductor module.

Abstract: The present invention deals with new type of broccoli plant suitable for the industrial manufacture of broccoli heads and florets. The invention relates to broccoli plants producing a head that is flat, comprises multiple individualized florets and protrudes above the leaves making it easy to harvest by machine. The invention further deals with methods and uses of the broccoli plants, heads and florets for the manufacture of broccoli processed and/or packaged food products.

Abstract: The present invention deals with new type of broccoli plant suitable for the industrial manufacture of broccoli heads and florets. The invention relates to broccoli plants producing a head that is flat, comprises multiple individualized florets and protrudes above the leaves making it easy to harvest by machine. The invention further deals with methods and uses of the broccoli plants, heads and florets for the manufacture of broccoli processed and/or packaged food products.

Abstract: A semiconductor device includes first and second power elements and first and second driving circuits. The semiconductor device also includes a resistor having a first end connected to the first power element and a second end connected to the first driving circuit. Furthermore, the semiconductor device includes a switching element connected between the first driving circuit and the first end of the resistor, and turned ON and OFF. When a first input signal is an OFF signal, the first driving circuit causes the first power element to become turned OFF, and when the first input signal is an OFF signal or when a second input signal is an ON signal, the switching element is turned ON.

Abstract: A semiconductor device includes high-side and low-side switching elements totem-pole-connected between high-voltage-side and low-voltage-side potentials; a high-side drive circuit, having high-voltage and low-voltage terminals which are connected to a floating power supply, which supplies either a voltage at the high-voltage terminal or a voltage at the low-voltage terminal for driving the high-side switching element; and a low-side drive circuit driving the low-side switching element and a reference voltage circuit generating a reference voltage between the voltages at high-voltage and low-voltage terminals of the high-side drive circuit. The reference voltage circuit supplies the reference voltage to a connection point between the high-side and low-side switching elements. The semiconductor device includes a charging switching element having a control terminal, a first terminal connected to the low-voltage terminal of the high-side drive circuit, and a grounded second terminal.

Abstract: A semiconductor device includes first and second power elements and first and second driving circuits. The semiconductor device also includes a resistor having a first end connected to the first power element and a second end connected to the first driving circuit. Furthermore, the semiconductor device includes a switching element connected between the first driving circuit and the first end of the resistor, and turned ON and OFF. When a first input signal is an OFF signal, the first driving circuit causes the first power element to become turned OFF, and when the first input signal is an OFF signal or when a second input signal is an ON signal, the switching element is turned ON.

Abstract: A semiconductor device includes high-side and low-side switching elements totem-pole-connected between high-voltage-side and low-voltage-side potentials; a high-side drive circuit, having high-voltage and low-voltage terminals which are connected to a floating power supply, which supplies either a voltage at the high-voltage terminal or a voltage at the low-voltage terminal for driving the high-side switching element; and a low-side drive circuit driving the low-side switching element and a reference voltage circuit generating a reference voltage between the voltages at high-voltage and low-voltage terminals of the high-side drive circuit. The reference voltage circuit supplies the reference voltage to a connection point between the high-side and low-side switching elements. The semiconductor device includes a charging switching element having a control terminal, a first terminal connected to the low-voltage terminal of the high-side drive circuit, and a grounded second terminal.

Abstract: A drive circuit has a level shift circuit which outputs level-shifted on and off signals each for controlling a power semiconductor element in an on or off state, a first RS flip flop which is supplied with the on signal through a setting input terminal and supplied with the off signal through a resetting input terminal, and which outputs a drive signal to the power semiconductor element, and a logic filter circuit which is provided between the level shift circuit and the first RS flip flop, and which blocks transmission of the on and off signals during the time period from a time at which both the on and off signals become a first logic to a time at which both the on and off signal become a second logic.

Abstract: A drive circuit has a level shift circuit which outputs level-shifted on and off signals each for controlling a power semiconductor element in an on or off state, a first RS flip flop which is supplied with the on signal through a setting input terminal and supplied with the off signal through a resetting input terminal, and which outputs a drive signal to the power semiconductor element, and a logic filter circuit which is provided between the level shift circuit and the first RS flip flop, and which blocks transmission of the on and off signals during the time period from a time at which both the on and off signals become a first logic to a time at which both the on and off signal become a second logic.