Abstract: Disclosed herein is a composition comprising 65 to 95 weight percent of a fluorinated monofunctional monomer; 5 to 35 weight percent of a fluorinated multifunctional monomer; and 0.5 to 3 weight percent of a silane coupling agent; where all weight percents are based on the total weight of the composition; where the fluorinated monofunctional monomer and the fluorinated multifunctional monomer are devoid of any trifunctional fluorocarbon moieties when they have 6 or more fluorocarbon repeat units; where the fluorocarbon repeat units are CF2 or CF moieties; and where a crosslinked composition has a shore D hardness of 56 to 85 and has a refractive index (RI) that meets the limitation of the equation RI?1.368+10.8/X, where X denotes wavelength in nanometers.

Abstract: Embodiments are directed to a distributed temperature sensing system. The system includes a first fiber optic cable and a second fiber optic cable. A first coupler is coupled to the first fiber optic cable. A second coupler is coupled to the second fiber optic cable. An optical isolator coupled between the first coupler and the second coupler to remove a Stokes signal in order to increase the range of the distributed temperature sensing system.

Abstract: Embodiments are directed to an optical fiber cable assembly. The optical fiber cable assembly is a polarization maintaining optical fiber assembly. The assembly includes an optical core located within a cladding. Also within the cladding is a stress rod. The stress rod can be centered within the cladding, with the optical fiber eccentrically located within the cladding. There can also be a second optical fiber eccentrically located within the cladding. The optical fiber can be centered within the cladding, with the stress rod eccentrically located within the cladding.

Abstract: Disclosed herein is an optical fiber assembly comprising a launching fiber having a receiving end and a transmitting end; an illuminating fiber having a receiving end and a transmitting end; where the receiving end of the launching fiber is operative to receive light from a light source and the transmitting end of the launching fiber is operative to transmit light to the receiving end of the illuminating fiber; where the launching fiber contacts the illuminating fiber in a manner so as to be offset from a center of a cross-sectional area of the illuminating fiber; and where the launching fiber has a diameter that is ? to ½ of a diameter of the illuminating fiber; and a lens that is operative to contact the transmitting end of the illuminating fiber.

Abstract: Disclosed herein is an optical fiber assembly comprising a launching fiber having a receiving end and a transmitting end; an illuminating fiber having a receiving end and a transmitting end; where the receiving end of the launching fiber is operative to receive light from a light source and the transmitting end of the launching fiber is operative to transmit light to the receiving end of the illuminating fiber; where the launching fiber contacts the illuminating fiber in a manner so as to be offset from a center of a cross-sectional area of the illuminating fiber; and where the launching fiber has a diameter that is ? to ½ of a diameter of the illuminating fiber; and a lens that is operative to contact the transmitting end of the illuminating fiber.

Abstract: Disclosed herein is an optical fiber assembly comprising a launching fiber having a receiving end and a transmitting end; an illuminating fiber having a receiving end and a transmitting end; where the receiving end of the launching fiber is operative to receive light from a light source and the transmitting end of the launching fiber is operative to transmit light to the receiving end of the illuminating fiber; where the launching fiber contacts the illuminating fiber in a manner so as to be offset from a center of a cross-sectional area of the illuminating fiber; and where the launching fiber has a diameter that is ? to ½ of a diameter of the illuminating fiber; and a lens that is operative to contact the transmitting end of the illuminating fiber.

Abstract: Disclosed herein is a composition comprising 65 to 95 weight percent of a fluorinated monofunctional monomer; 5 to 35 weight percent of a fluorinated multifunctional monomer; and 0.5 to 3 weight percent of a silane coupling agent; where all weight percents are based on the total weight of the composition; where the fluorinated monofunctional monomer and the fluorinated multifunctional monomer are devoid of any trifunctional fluorocarbon moieties when they have 6 or more fluorocarbon repeat units; where the fluorocarbon repeat units are CF2 or CF moieties; and where a crosslinked composition has a shore D hardness of 56 to 85 and has a refractive index (RI) that meets the limitation of the equation RI?1.368+10.8/X, where X denotes wavelength in nanometers.

Abstract: Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.

Abstract: In an optical fiber turnaround, first and second optical fiber cores are configured to transmit light bidirectionally along a transmission axis between proximal and distal ends of the first and second optical fiber cores. A reflector component is positioned at the distal ends of the first and second optical fiber cores. The first core, second core, and reflector component are configured to provide a bidirectional routing path, wherein light energy travels from the proximal end of one of the first and second cores towards the reflector component, and travels back from the reflector component along the other of the first and second cores.

Abstract: Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength ?1 to visible light at a second wavelength ?2, the active region including at least a first potential well. The attaching step is carried out such that the stack is disposed between the substrate and the carrier window, which is transparent to the second wavelength ?2. The carrier window may also have a lateral dimension greater than that of the stack. The removal step is carried out so as to provide an RSC carrier device that includes the carrier window and the stack.

Abstract: Disclosed herein is an optical fiber assembly comprising a launching fiber having a receiving end and a transmitting end; an illuminating fiber having a receiving end and a transmitting end; where the receiving end of the launching fiber is operative to receive light from a light source and the transmitting end of the launching fiber is operative to transmit light to the receiving end of the illuminating fiber; where the launching fiber contacts the illuminating fiber in a manner so as to be offset from a center of a cross-sectional area of the illuminating fiber; and where the launching fiber has a diameter that is ?to ½of a diameter of the illuminating fiber; and a lens that is operative to contact the transmitting end of the illuminating fiber.

Abstract: We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-V layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.

Abstract: The present invention provides systems and methods for a receiver threshold optimization loop to provide self-contained automatic adjustment in a compact module, such as a pluggable optical transceiver. The receiver threshold optimization loop utilizes a performance metric associated with the receiver, such as FEC, to optimize performance of the receiver. The receiver is optimized through a change in the receiver threshold responsive to the performance metric. Advantageously, the present invention provides improved receiver performance through a continuous adjustment that is self-contained within the receiver, such as within a pluggable optical transceiver compliant to a multi-source agreement (MSA). The receiver threshold optimization loop can include a fine and a coarse sweep of adjustment from an initial setting.

Abstract: An optical fiber with a shaped tip is covered by a cap that is fused to the optical fiber using doped silica. The doped silica has a melting temperature that is lower than the melting temperature of the optical fiber. The doped silica also has a melting temperature that is lower than the melting temperature of the cap.

Abstract: Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed.

Abstract: Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.

Abstract: Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light source (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer stack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive and the second wavelength. The second mirror includes a second multilayer stack.

Abstract: Light emitting systems are disclosed.

Abstract: Light emitting systems are described. Particularly, light emitting systems and light converting components utilized within these systems are described. The light emitting system and components are formed such that dark-line defects do not interfere with the light emitting system efficiency.

Abstract: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.