Abstract: The present invention provides a graphene structure having graphene bubbles and a preparation method for the same. The preparation method comprises: providing a substrate; forming a hydrogen terminated layer on a top surface of the substrate and a graphene layer disposed on a top surface of the hydrogen terminated layer; and placing a probe on the graphene layer and applying a preset voltage to the probe, to excite a part of the hydrogen terminated layer at a position corresponding to the probe to convert into hydrogen, the hydrogen causing the graphene layer at a position corresponding to the hydrogen to bulge, so as to form a graphene bubble enveloping the hydrogen.

Abstract: The present application provides an antibody or antibody fragment capable of binding to a lung-specific X protein and being used to treat a tumor, and a use thereof. The antibody or antibody fragment includes heavy chain CDRs having amino acid sequences of SEQ ID NO: 1, SEQ ID NO: 2, and SEQ ID NO: 3 and light chain CDRs having amino acid sequences of SEQ ID NO: 4, SEQ ID NO: 5, and SEQ ID NO: 6. Alternatively, the antibody or antibody fragment includes heavy chain CDRs having amino acid sequences of SEQ ID NO: 1, SEQ ID NO: 7, and SEQ ID NO: 3 and light chain CDRs having amino acid sequences of SEQ ID NO: 8, SEQ ID NO: 5, and SEQ ID NO: 6. The antibody is a chimeric antibody.

Abstract: The present invention provides a graphene structure having graphene bubbles and a preparation method for the same. The preparation method comprises: providing a substrate; forming a hydrogen terminated layer on a top surface of the substrate and a graphene layer disposed on a top surface of the hydrogen terminated layer; and placing a probe on the graphene layer and applying a preset voltage to the probe, to excite a part of the hydrogen terminated layer at a position corresponding to the probe to convert into hydrogen, the hydrogen causing the graphene layer at a position corresponding to the hydrogen to bulge, so as to form a graphene bubble enveloping the hydrogen.

Abstract: The present application provides an antibody or antibody fragment capable of binding to a lung-specific X protein and being used to treat a tumor, and a use thereof. The antibody or antibody fragment includes heavy chain CDRs having amino acid sequences of SEQ ID NO: 1, SEQ ID NO: 2, and SEQ ID NO: 3 and light chain CDRs having amino acid sequences of SEQ ID NO: 4, SEQ ID NO: 5, and SEQ ID NO: 6. Alternatively, the antibody or antibody fragment includes heavy chain CDRs having amino acid sequences of SEQ ID NO: 1, SEQ ID NO: 7, and SEQ ID NO: 3 and light chain CDRs having amino acid sequences of SEQ ID NO: 8, SEQ ID NO: 5, and SEQ ID NO: 6. The antibody is a chimeric antibody.

Abstract: A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeOx on the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved.

Abstract: A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeOx on the surface of the Ge-based substrate and to stop mutual diffusion between the gate dielectric and the Ge-based substrate, the interface property between Ge and the high-k gate dielectric layer is improved.

Abstract: A file system data is divided into two or more data blocks. A unique encryption key is assigned to each data block with the encryption key assigned to each data block being distinct from other encryption keys used to encrypt the other data blocks and each of the data blocks is encrypted using its assigned encryption key. One of the data blocks within the file system is then selected and decrypted using the distinct encryption key assigned to the selected data block and a new encryption key, distinct for the previously assigned encryption key, is assigned to the selected data block and the selected data block is re-encrypted using the new encryption key. This process is then repeated for each data block on a sequential/cyclic and continually rotating basis.