Abstract: This application provides a load-bearing support plate, chain structure, and a conveyor belt structure incorporating them, the load-bearing support plate comprises a first panel, a second panel, and a transition panel for connecting the first panel with the second panel; the first panel is offset in a first direction relative to the second panel, at least one reinforcing rib provided on the first panel, the reinforcing rib extending upwards from the bottom of the first panel to the upper edge of the first panel and forming a bearing surface with the top surface of the first panel. By forming the first panel into a curved shape with the use of reinforcing ribs, the overall support capability is enhanced. Also, by extending the reinforcing ribs to the upper edge of the first panel, the upper edge of the support plate below becomes curved, offering a larger contact area in the thickness direction, thereby improving the stability of the spiral stacking motion.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.

Abstract: A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser excited surface plasmons in a plasmon generator to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The optical radiation is transmitted to the plasmon generator by means of a waveguide, whose optical axis (centerline) is tilted relative to either or both the backside surface normal and ABS surface normal in order to eliminate back reflections of the optical radiation that can adversely affect the properties and performance of the laser. Variations of the disclosure include tilting the plasmon generator, the waveguide and the laser diode.

Abstract: A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser excited surface plasmons in a plasmon generator to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The optical radiation is transmitted to the plasmon generator by means of a waveguide, whose optical axis (centerline) is tilted relative to either or both the backside surface normal and ABS surface normal in order to eliminate back reflections of the optical radiation that can adversely affect the properties and performance of the laser. Variations of the disclosure include tilting the plasmon generator, the waveguide and the laser diode.

Abstract: A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser excited surface plasmons in a plasmon generator to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The optical radiation is transmitted to the plasmon generator by means of a waveguide, whose optical axis (centerline) is tilted relative to either or both the backside surface normal and ABS surface normal in order to eliminate back reflections of the optical radiation that can adversely affect the properties and performance of the laser. Variations of the disclosure include tilting the plasmon generator, the waveguide and the laser diode.

Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

Abstract: A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser excited surface plasmons in a plasmon generator to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The optical radiation is transmitted to the plasmon generator by means of a waveguide, whose optical axis (centerline) is tilted relative to either or both the backside surface normal and ABS surface normal in order to eliminate back reflections of the optical radiation that can adversely affect the properties and performance of the laser. Variations of the disclosure include tilting the plasmon generator, the waveguide and the laser diode.

Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

Abstract: A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.

Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

Abstract: A DFH (dynamic fly height) equipped TAMR (Thermal Assisted Magnetic Recording) write head uses optical-laser excited surface plasmons to locally heat a magnetic recording medium so that writing is enabled, while a DFH heater allows the head to fly very close to the magnetic medium. The write head includes an integral HDI sensor with a narrow track width for high spatial resolution. The HDI sensor is calibrated to obtain a relationship between its resistance and heater power. When the TAMR head is operated, measurement of high frequency voltage across the HDI sensor as a function of heater power indicates impending touchdowns, while use of the calibrated resistance curve enables the sensor to monitor temperature variations within components of the TAMR write head.

Abstract: A magnetic tunnel junction memory cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state. Memory devices and methods are also described.

Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

Abstract: A staggered magnetic tunnel junction includes a free magnetic layer extending in a lateral direction between a first end portion and an opposing second end portion and a tunneling barrier disposed between a reference magnetic layer and the first end portion and forming a magnetic tunnel junction. Current flows through the free magnetic layer in the lateral direction to switch the magnetic tunnel junction between a high resistance state and a low resistance state.

Abstract: A memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a word line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a unipolar voltage across the magnetic tunnel junction data cell. A diode is electrically coupled between the magnetic tunnel junction data cell and the word line or bit line. A voltage source provides the unipolar voltage across the magnetic tunnel junction data cell that writes the high resistance state and the low resistance state.

Abstract: A magnetic tunnel junction having a compsensation element is disclosed. The magnetic tunnel junction includes a reference element, and a compensation element having an opposite magnetization moment to a magnetization moment of the reference element. A free magnetic layer is between the reference element and the compensation element, and an electrically insulating and non-magnetic tunneling barrier layer separates the free magnetic layer from the reference element. The free magnetic layer includes Co100-X-YFeXBY wherein X is a value being greater than 30 and Y is a value being greater than 15.

Abstract: Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.