Abstract: Provided are a cooking device, a control method and apparatus thereof, and a computer-readable storage medium. The cooking device includes a microwave module, a hot air module, a heating tube module, and a fan module. The method includes: obtaining a characteristic parameter of a food material and a cooking stage of the cooking device; determining a cooking parameter of the cooking device according to the characteristic parameter of the food material; and controlling at least one of the microwave module, the hot air module, the heating tube module, and the fan module according to the cooking parameter and the cooking stage.

Abstract: Provided is a new compound capable of effectively inhibiting ATX. The compound is represented by formula I, or the compound is a tautomer, a stereoisomer, a hydrate, a solvate, a salt, or a prodrug of the compound represented by formula I. In formula (I), R1 and R2 are independently selected from —H or —CH3, provided that: R1 and R2 are not —H at the same time or are not —CH3 at the same time.

Abstract: High bandwidth time-and-space resolved scatter phase transition microscopy systems configured to detect melt onset in a wafer being processed by laser annealing systems with ultra-short dwell times and spot size.

Abstract: Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select the first and second intensities that ensure good anneal temperature uniformity as a function of wafer position. The first and second intensities can also be selected to minimize edge damage or slip generation.

Abstract: Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts.

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select the first and second intensities that ensure good anneal temperature uniformity as a function of wafer position. The first and second intensities can also be selected to minimize edge damage or slip generation.

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

Abstract: Systems and methods are disclosed for performing laser annealing in a manner that reduces or minimizes wafer surface temperature variations during the laser annealing process. The systems and methods include annealing the wafer surface with first and second laser beams that represent preheat and anneal laser beams having respective first and second intensities. The preheat laser beam brings the wafer surface temperate close to the annealing temperature and the anneal laser beam brings the wafer surface temperature up to the annealing temperature. The anneal laser beam can have a different wavelength, or the same wavelength but different orientation relative to the wafer surface. Reflectivity maps of the wafer surface at the preheat and anneal wavelengths are measured and used to select first and second intensities that ensure good anneal temperature uniformity as a function of wafer position.

Abstract: A detector for optical analysis of a biochip determines the focal position of a plurality of analytes on the biochip using one or more registration markers on the biochip, wherein the analytes and the registration marker are illuminated by different light sources. Therefore, contemplated configurations will significantly reduce overall focusing time and automate proper positioning of the biochip, while allowing to determine a focal position without photobleaching or other undesirable effects on optically labile compounds. Thus, automated analyses can be performed without manual user intervention.

Abstract: A detector for optical analysis of a biochip determines the focal position of a plurality of analytes on the biochip using one or more registration markers on the biochip, wherein the analytes and the registration marker are illuminated by different light sources. Therefore, contemplated configurations will significantly reduce overall focusing time and automate proper positioning of the biochip, while allowing to determine a focal position without photobleaching or other undesirable effects on optically labile compounds. Thus, automated analyses can be performed without manual user intervention.