Abstract: Provided in the present application are a method for treating a semiconductor substrate layer and a method for preparing a solar cell. The method for treating a semiconductor substrate layer comprises a step of providing a monocrystalline silicon wafer, a step of spraying a diffusion liquid onto a surface of the monocrystalline silicon wafer, and a step of annealing the monocrystalline silicon wafer, and further comprises subjecting the monocrystalline silicon wafer to a surface oxidation treatment before spraying the diffusion liquid onto the surface of the monocrystalline silicon wafer, wherein the surface oxidation treatment is used for improving the lyophilicity of the surface of the monocrystalline silicon wafer to the diffusion liquid, so as to improve the uniformity of the annealing treatment of the monocrystalline silicon wafer.

Abstract: An apparatus includes a processor and a memory that stores code executable by the processor. The code is executable by the processor to receive a request at a first device to execute a machine learning workload for the first device, dynamically determine at least one characteristic of the first device that is related to execution of the machine learning workload, dynamically determine at least one characteristic of a second device that is related to execution of the machine learning workload, and select one of the first and second devices to execute the machine learning workload in response to the at least one characteristic of the selected one of the first and second devices being more suitable for execution of the machine learning workload than another of the first and second devices.

Abstract: A heterojunction solar cell and a preparation method therefor. The heterojunction solar cell comprises: a semiconductor substrate layer; and a back composite transparent conductive film located on one side of the semiconductor substrate layer. The back surface composite transparent conductive film comprises: a first back surface transparent conductive film; and a second back transparent conductive film located on the side surface of the first back transparent conductive film facing away from the semiconductor substrate layer. Both the first back transparent conductive film and the second back transparent conductive film are doped with group III heavy atoms, and the concentration of the group III heavy atoms in the second back transparent conductive film is less than that of the group III heavy atoms in the first back transparent conductive film.

Abstract: A heterojunction cell and a method for preparing same. The heterojunction cell comprises: a semiconductor substrate layer; and an intrinsic semiconductor composite layer, wherein the intrinsic semiconductor composite layer is located on the surface of at least one side of the semiconductor substrate layer, and the intrinsic semiconductor composite layer comprises: a bottom intrinsic layer; and a wide-band-gap intrinsic layer, which is located on the surface of the side of the bottom intrinsic layer that is away from the semiconductor substrate layer, the band gap of the wide-band-gap intrinsic layer being greater than the band gap of the bottom intrinsic layer. The band gap of a wide-band-gap intrinsic layer is larger, and when sunlight irradiates a heterojunction cell, photons, the energy of which is less than that of the band gap of the wide-band-gap intrinsic layer, cannot be subjected to parasitic absorption.

Abstract: A cabin heating circuit includes a first pump, a heat source, and a heater core. A battery heating circuit includes a first flow path that branches off from the cabin heating circuit at a three-way flow control valve. The battery heating circuit further includes a second flow path that is independent of the first flow path. The first flow path and the second flow path are thermally coupled by a heat exchanger. The second flow path includes the heat exchanger, a second pump, and a battery heat exchanger. The control unit adjusts an output of the heat source, an opening degree of the three-way flow control valve, an output of the first pump, and an output of the second pump. If a cabin and a battery are heated simultaneously, the control unit regulates the output of the first pump and/or the output of the second pump.

Abstract: A multidimensional security situation real-time presentation method according to an embodiment includes selecting security testing cases of at least one dimensionality based on a test instruction to generate a target test set, and generating a corresponding target log set according to the target test set, determining a difference log set according to the target log set and a monitoring log set, and performing real-time output display of difference log events, test processing time periods, enhanced training nodes and a test processing efficiency corresponding to the difference log set.

Abstract: An electronic device may collect statistics on a quantity of recharging times of the battery in at least one single charging process, and/or obtain a temperature of the battery in recharging. Then, the electronic device may lower a full charge threshold and a recharge threshold based on the quantity of recharging times and/or the temperature, and control recharging by using a lowered full charge threshold and a lowered recharge threshold.

Abstract: A multidimensional security situation real-time presentation method according to an embodiment includes selecting security testing cases of at least one dimensionality based on a test instruction to generate a target test set, and generating a corresponding target log set according to the target test set, determining a difference log set according to the target log set and a monitoring log set, and performing real-time output display of difference log events, test processing time periods, enhanced training nodes and a test processing efficiency corresponding to the difference log set.

Abstract: Apparatuses, methods, systems, and program products are disclosed for dynamic client/server selection for machine learning execution. An apparatus includes a processor and a memory that stores code executable by the processor. The code is executable by the processor to receive a request at a first device to execute a machine learning workload for the first device, dynamically determine at least one characteristic of the first device that is related to execution of the machine learning workload, dynamically determine at least one characteristic of a second device that is related to execution of the machine learning workload, and select one of the first and second devices to execute the machine learning workload in response to the at least one characteristic of the selected one of the first and second devices being more suitable for execution of the machine learning workload than another of the first and second devices.

Abstract: An atomization device for preparing metal alloy powder which includes a main body provided with an atomization chamber, the atomization chamber is provided with an inlet and an atomization zone, the inlet is configured to introduce metal alloy liquid; a high-pressure inert gas pipeline system that is configured to provide a high-pressure inert gas introduced into an atomization zone of the atomization chamber, to atomize the metal alloy liquid; and an oxygen-containing gas pipeline system that is configured to transfer oxygen-containing gas to the atomization zone.

Abstract: The present application relates to a method for preparing a target material, the method including: spraying a transition layer on the surface of a substrate in an atmospheric atmosphere to obtain a substrate containing the transition layer; spraying a target material layer on the surface of the substrate containing the transition layer in an atmospheric atmosphere. The present application also discloses a method for preparing a tubular target material and a target material.

Abstract: Provided is a method of preparing an alloy powder, comprising the steps of: melting the metal elements to produce the alloy solution; atomizing the alloy solution into small drops under oxygen-containing atmosphere; forcing the small drops to be quickly cooled under the driving of the atomizing flow to obtain the alloy powder; wherein, when the method is used to prepare Cu—In—Ga alloy powder, Cu/(In+Ga) is 0.5 to 1.1, In/(In+Ga) is 0.2 to 0.9, Ga/(In+Ga) is 0.1 to 0.8, In/(In+Ga)+Ga/(In+Ga) is 1. Also provided is an alloy powder and a method of preparing Cu—In—Ga alloy powder.

Abstract: The disclosure discloses a method for reinforcing a rail by laser and auxiliary heat source efficient hybrid cladding. The laser and the auxiliary heat source simultaneously apply on a region to be cladded of a rail surface. The laser serves as a main heat source to enable simultaneous and rapid fusion of an added metal powder and partial substrate material in the rail surface to form a molten pool. The auxiliary heat source moves with the laser heat source in the same direction at the same speed, and performs synchronous preheating and/or post-heating on the laser molten pool, the heat-affected zone and the surface layer of the rail substrate to reduce the temperature gradient, thereby reducing the cooling rate, and avoiding martensite transformation and cracking in the heat-affected zone.

Abstract: In one aspect, a device includes a processor and storage accessible to the processor. The storage bears instructions executable by the processor to receive an image of an area from a camera, and to execute image recognition on the first image to identify a dirty region in the area. Based on the identification of the dirty region, the instructions are executable to generate a command for a robotic cleaning device to move to the dirty region for facilitating cleaning of the dirty region by the robotic cleaning device.

Abstract: An embodiment of the present disclosure discloses a method and device for film removing process. The device includes: an optical assembly. The optical assembly includes: a laser generator for generating a laser beam; a first scanning mirror for reflecting the laser beam; a second scanning mirror for reflecting the laser beam reflected by the first scanning mirror; and a focusing mirror for focusing the laser beam reflected by the second scanning mirror onto a thin film solar cell for film removing process. The device further includes a processor and a memory in which instructions are stored, and the following steps are implemented when the instructions are executed by the processor: moving the thin film solar cell or the optical assembly to a designated position, and controlling the first scanning mirror and/or the second scanning mirror to be deflected so as to perform a film removing process on the thin film solar cell.

Abstract: Embodiments of the present disclosure provide a processing method for removing film and apparatus for removing film. The apparatus for removing film includes an optical component and a processor, in which the optical component includes: a laser generator configured to generate a laser beam; a first scanning galvanometer configured to reflect the laser beam; and a second scanning galvanometer configured to reflect the laser beam reflected by the first scanning galvanometer. The processor is configured to control the laser generator to generate a laser beam, and control the first scanning galvanometer and the second scanning galvanometer to deflect, thereby performing the film removal process on the target object.

Abstract: In one aspect, a device includes a processor and storage accessible to the processor. The storage bears instructions executable by the processor to receive an image of an area from a camera, and to execute image recognition on the first image to identify a dirty region in the area. Based on the identification of the dirty region, the instructions are executable to generate a command for a robotic cleaning device to move to the dirty region for facilitating cleaning of the dirty region by the robotic cleaning device.

Abstract: A joint short-time and long-time storage device, including a first electrode layer, a functional material layer connected to the first electrode layer, and a second electrode layer connected to the functional material layer. The first electrode layer is made of inert conductive metal, the second electrode layer is made of active conductive metal, and the functional material layer is made of chalcogenide.

Abstract: A joint short-time and long-time storage device, including a first electrode layer, a functional material layer connected to the first electrode layer, and a second electrode layer connected to the functional material layer. The first electrode layer is made of inert conductive metal, the second electrode layer is made of active conductive metal, and the functional material layer is made of chalcogenide.