Abstract: An LED tube lamp having an LED unit is disclosed. The LED tube lamp includes a control circuit that selectively determines whether to perform a first mode or a second mode of lighting operation according to a state of a property of an external driving signal and a switching circuit coupled to the control circuit and the LED unit. When the control circuit determines to perform the first mode of lighting operation, the control circuit controls the second circuit in a manner such that the switching circuit maintains its on state to allow continual current to flow through the LED unit, until the external driving signal is disconnected from the LED tube lamp, and when the control circuit determines to perform the second mode of lighting operation, the control circuit controls the switching circuit in a manner to regulate the continuity of current to flow through the LED unit by alternately turning on and off the switching circuit.

Abstract: An LED tube lamp includes a first rectifying circuit, a filter circuit, an LED lighting module, and a ballast-compatible circuit. The first rectifying circuit is coupled to a first pin and second pin and is configured to rectify an external driving signal transmitted from the first pin and/or the second pin. The filter circuit is coupled to the first rectifying circuit and is configured to filter the rectified signal by the first rectifying circuit. The LED lighting module is coupled to the filter circuit and receives the filtered signal by the filter circuit to light. The ballast-compatible circuit has two ballast-compatible circuit terminals coupled to the first rectifying circuit and is configured to control the LED tube lamp to light or stop lighting according to the external driving signal.

Abstract: An LED tube lamp includes a first rectifying circuit, a filter circuit, an LED lighting module, and a ballast-compatible circuit. The first rectifying circuit is coupled to a first pin and second pin and is configured to rectify an external driving signal transmitted from the first pin and/or the second pin. The filter circuit is coupled to the first rectifying circuit and is configured to filter the rectified signal by the first rectifying circuit. The LED lighting module is coupled to the filter circuit and receives the filtered signal by the filter circuit to light. The ballast-compatible circuit has two ballast-compatible circuit terminals coupled to the first rectifying circuit and is configured to control the LED tube lamp to light or stop lighting according to the external driving signal.

Abstract: A manufacturing method for a semiconductor device with a discrete field oxide structure is provided, the method includes: growing a first PAD oxide layer on the surface of a wafer; forming a first silicon nitride layer (302) on the first PAD oxide layer through deposition; defining a field region by photolithography and etching same to remove the first silicon nitride layer (302) located on the field region; performing an ion implantation process to the field region; performing field region oxidation to grow a field oxide layer (304); peeling off the first silicon nitride layer (302); wet-dipping the wafer to remove the first PAD oxide layer and a part of field oxide layer (304); growing a second PAD oxide layer on the surface of the wafer, and forming a second silicon nitride layer (312) on the second PAD oxide layer through deposition; defining a drift region by photolithography and etching same to remove the second silicon nitride layer (312) on the drift region; performing an ion implantation process to t

Abstract: A manufacturing method for a semiconductor device with a discrete field oxide structure is provided, the method includes: growing a first PAD oxide layer on the surface of a wafer; forming a first silicon nitride layer (302) on the first PAD oxide layer through deposition; defining a field region by photolithography and etching same to remove the first silicon nitride layer (302) located on the field region; performing an ion implantation process to the field region; performing field region oxidation to grow a field oxide layer (304); peeling off the first silicon nitride layer (302); wet-dipping the wafer to remove the first PAD oxide layer and a part of field oxide layer (304); growing a second PAD oxide layer on the surface of the wafer, and forming a second silicon nitride layer (312) on the second PAD oxide layer through deposition; defining a drift region by photolithography and etching same to remove the second silicon nitride layer (312) on the drift region; performing an ion implantation process to t