Abstract: A high power narrow band, high repetition rate laser light source optical improvement apparatus and methods are disclosed with a fast angularly positionable mirror having a mirror mounting frame, a reflective optic with a coefficient different from that of the mounting frame, at least one flexure mount fromed in the mounting frame that is flexible having flexure arm attached the flexture to the mounting frame. The apparatus may include a flexure force mechanism having an elongated rod. The force mechanism may pre-stress the flexure. The mirror maybe a grating which includes a substrate with metallic layer formed on the substrate, and a protective coating made of silica formed on the reflective metallic layer. The grating maybe actively tuned using an electro- or magneto-sensitive element. Oxides of the metal in the reflective layer may be removed by a hydrogen purge system exposed to deep ultraviolet radiation.

Abstract: An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis or rotation and an ellipse in another. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members.

Abstract: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

Abstract: An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber.

Abstract: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems.

Abstract: The present invention provides long life optics for a modular, high repetition rate, ultraviolet gas discharge laser systems producing a high repetition rate high power output beam. The invention includes solutions to a surface damage problem discovered by Applicants on CaF2 optics located in high pulse intensity sections of the output beam of prototype laser systems. Embodiments include an enclosed and purged beam path with beam pointing control for beam delivery of billions of output laser pulses. Optical components and modules described herein are capable of controlling ultraviolet laser output pulses with wavelength less than 200 nm with average output pulse intensities greater than 1.75×106 Watts/cm2 and with peak intensity or greater 3.5×106 Watts/cm2 for many billions of pulses as compared to prior art components and modules which failed after only a few minutes in these pulse intensities.

Abstract: The present invention provides a gas discharge ultraviolet laser capable of producing a high quality pulsed ultraviolet laser beam at pulse rates greater than 2000 Hz at pulse energies at 5 mJ or greater and having an enclosed beam path at least a portion of which comprises an oxidation agent. In a preferred embodiment a portion of the beam path comprises a sealed chamber containing a gas comprising a small concentration of oxygen. In one preferred embodiment the sealed chamber is an etalon chamber and the contained gas is nitrogen with an oxygen concentration of between 1.6 and 2.4 percent. In another preferred embodiments a small concentration of oxygen is added to the purge gas of a special purge compartment containing optical components exposed to high intensity output laser beam.

Abstract: A high power narrow band, high repetition rate laser light source optical improvement apparatus and methods are disclosed which may comprise a fast moving angularly positionable tuning mirror comprising: a mirror mounting frame comprising a first material and a relatively flat mounting surface area; a reflective optic comprising a second material having a coefficient of thermal expansion different from that of the first material of the mounting frame; at least two attachment points of attachment between the mounting frame and the reflective optic on the mounting frame surface; and, at least one flexure mount formed in the mounting frame that is flexible in a flexure axis corresponding to a longitudinal axis of thermal expansion of the mounting frame and the reflective optic, positioned at one of the at least two points of attachment.

Abstract: An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber.

Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems.

Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems.

Abstract: The present invention provides long life optics for a modular, high repetition rate, ultraviolet gas discharge laser systems producing a high repetition rate high power output beam. The invention includes solutions to a surface damage problem discovered by Applicants on CaF2 optics located in high pulse intensity sections of the output beam of prototype laser systems. Embodiments include an enclosed and purged beam path with beam pointing control for beam delivery of billions of output laser pulses. Optical components and modules described herein are capable of controlling ultraviolet laser output pulses with wavelength less than 200 nm with average output pulse intensities greater than 1.75×106 Watts/cm2 and with peak intensity or greater 3.5×106 Watts/cm2 for many billions of pulses as compared to prior art components and modules which failed after only a few minutes in these pulse intensities.

Abstract: The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems.

Abstract: The present invention provides a gas discharge ultraviolet laser capable of producing a high quality pulsed ultraviolet laser beam at pulse rates greater than 2000 Hz at pulse energies at 5 mJ or greater and having an enclosed beam path at least a portion of which comprises an oxidation agent. In a preferred embodiment a portion of the beam path comprises a sealed chamber containing a gas comprising a small concentration of oxygen. In one preferred embodiment the sealed chamber is an etalon chamber and the contained gas is nitrogen with an oxygen concentration of between 1.6 and 2.4 percent. In another preferred embodiments a small concentration of oxygen is added to the purge gas of a special purge compartment containing optical components exposed to high intensity output laser beam.

Abstract: A single chamber gas discharge laser system having a pulse power source for producing electrical discharges at the rate of at least 1000 pulses per second. The discharge along with laser optics create two short lived gain media, one for producing a seed beam and the other for amplifying the seed beam. Laser gas circulation around a chamber circulation path is provided and the electrodes and discharges are arranged so that debris from one of the gain media is not circulated to the other gain media during discharges until the debris has made a loop around at least 90% of the chamber circulation path.