Abstract: The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode; the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer; and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.

Abstract: Disclosed is a three-dimensional non-volatile ferroelectric memory including a ferroelectric memory array structure, wherein the ferroelectric memory array structure includes multiple layers of ferroelectric memory cell array disposed in a stacked way, and each layer of the ferroelectric memory cell array includes ferroelectric memory cells arranged in rows and columns; wherein word lines and bit lines which are substantially orthogonal to each other are oppositely disposed on two sides of the corresponding ferroelectric memory cell respectively, and a reference ferroelectric body is disposed adjacent to the corresponding ferroelectric memory cell. A polarization direction of an electric domain in the ferroelectric memory cell is not perpendicular to an electric field direction of a write voltage signal applied to the word line and the bit line; and when the write voltage signal is applied between the word line and the bit line.

Abstract: The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode; the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer; and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.

Abstract: Disclosed is a three-dimensional non-volatile ferroelectric memory including a ferroelectric memory array structure, wherein the ferroelectric memory array structure includes multiple layers of ferroelectric memory cell array disposed in a stacked way, and each layer of the ferroelectric memory cell array includes ferroelectric memory cells arranged in rows and columns; wherein word lines and bit lines which are substantially orthogonal to each other are oppositely disposed on two sides of the corresponding ferroelectric memory cell respectively, and a reference ferroelectric body is disposed adjacent to the corresponding ferroelectric memory cell. A polarization direction of an electric domain in the ferroelectric memory cell is not perpendicular to an electric field direction of a write voltage signal applied to the word line and the bit line; and when the write voltage signal is applied between the word line and the bit line.