Patents by Inventor Xiaojun T. Huang

Xiaojun T. Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7504757
    Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: March 17, 2009
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kanakasabapathi Subramanian, Xiaojun T. Huang, Noel C. MacDonald
  • Patent number: 7045466
    Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: May 16, 2006
    Assignee: Cornell Research Foundation, Inc.
    Inventors: Kanakasabapathi Subramanian, Xiaojun T. Huang, Noel C. MacDonald
  • Publication number: 20040198063
    Abstract: Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.
    Type: Application
    Filed: June 27, 2003
    Publication date: October 7, 2004
    Inventors: Kanakasabapathi Subramanian, Xiaojun T. Huang, Noel C. MacDonald