Patents by Inventor Xiaokuan YIN

Xiaokuan YIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230144932
    Abstract: The present disclosure relates to display assemblies, display apparatuses, and fingerprint recognition methods. One example display assembly includes a display panel and a fingerprint recognition module located on a light-emitting surface of the display panel. The fingerprint recognition module includes multiple fingerprint recognition units. Each fingerprint recognition unit includes at least one phototransistor and one switch transistor. The phototransistor includes a first active layer, a first gate, a first source, and a first drain. A material for making the first active layer includes an organic semiconductor material. The first drain and the first gate partially overlap to form a first capacitor. The switch transistor includes a second active layer, a second gate, a second source, and a second drain. The fingerprint recognition module includes a first metal layer. The first source, the first drain, the second source, and the second drain are all located at the first metal layer.
    Type: Application
    Filed: March 23, 2021
    Publication date: May 11, 2023
    Inventors: Yang ZHAO, Xinkai WU, CHunyen LIU, Xiaojun GUO, Hu HE, Xiaokuan YIN, Xiao HOU
  • Publication number: 20230147182
    Abstract: The present disclosure relates to display assemblies, display apparatus, and driving methods. One example display assembly includes a display panel and a function module located on a light-emitting surface of the display panel. A function unit in the function module includes at least one phototransistor and one switch transistor. The phototransistor includes a first active layer, a first gate, a first source, and a first drain. A material for making the first active layer includes an organic semiconductor material. The first active layer is located on a side of the first gate away from the display panel. The first drain and the first gate partially overlap to form a first capacitor. The switch transistor includes a second active layer, a second gate, a second source, and a second drain. The function unit includes a transparent electrode located on the first active layer and overlapping the first active layer.
    Type: Application
    Filed: March 18, 2021
    Publication date: May 11, 2023
    Inventors: Yang ZHAO, Xinkai WU, Chun Yen LIU, Xiaojun GUO, Haiming HE, Xiao HOU, Xiaokuan YIN