Abstract: Disclosed embodiments relate to natural language processing. Techniques can include receiving input text, extracting, from the input text, at least one modifier and aspect pair, receiving data from a knowledgebase, based on the at least one modifier and aspect pair and commonsense data, generate one or more premise embeddings, convert the input text into tokens, generating at least one vector for one or more of the tokens based on an analysis of the tokens, combine the at least one vector with the one or more premise embeddings to create at least one combined vector, and analyze the at least one combined vector wherein the analysis generates an output indicative of a feature of the input text.

Abstract: A polishing device for an indium phosphide substrate and a polishing process are provided, which belong to the technical field of polishing of indium phosphide.

Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.

Abstract: A growth device and method for low-stress crystals are provided, which relate to the field of preparation of crystals, in particular to a device and method for preparing low-stress and low-defect crystals by using a pulling method. The growth device includes a furnace body; a crucible and a heating and insulation system which are arranged at a bottom of the furnace body; a crystal pulling mechanism, and a quartz observation window; the device further includes a liftable heating mantle mechanism including a heating mantle body, a heating mantle supporting component, a heating wire arranged around the heating mantle body, and a heating mantle lifting mechanism. The method includes: after crystals are pulled out of a melt, covering the crystals with a liftable heating mantle mechanism.

Abstract: The present invention relates to a process for synthesizing indium phosphide by liquid phosphorus injection method, which belongs to the field of semiconductor technology. The method comprises: converting gaseous phosphorus into liquid phosphorus through a condenser, injecting the liquid phosphorus into an indium melt while preventing phosphorus vaporization by randomly delivering a low temperature inert gas, and causing an instantaneous reaction between the liquid phosphorus and the liquid indium melt, so that an indium phosphide melt can be synthesized at a relatively low temperature, with advantages of high efficiency, high purity, precise proportioning, large capacity, aiding in the growth of a phosphorus-rich indium phosphide polycrystal and facilitating the growth of an indium phosphide monocrystal. The method includes the steps of indium cleaning, phosphorus charging, furnace loading, communication of condenser, synthesis, preparation of crystals, etc.

Abstract: A rocking type seed crystal surface corrosion, cleaning and drying device and a process method belong to the technical field of semiconductor crystal growth, comprising a corrosion tank and a matched corrosion tank cover, a seed crystal support platform arranged at a middle position of the bottom of the corrosion tank, and a high-purity hot nitrogen introduction short straight pipe, an corrosive liquid introduction short straight pipe, a deionized water introduction short straight pipe and an overflow liquid discharge short straight pipe matched with and arranged at both sides of the corrosion tank, wherein free ends of the high-purity hot nitrogen introduction short straight pipe, the corrosive liquid introduction short straight pipe and the deionized water introduction short straight pipe are all provided with switch stop valves; the device further comprises a rocking mechanism provided at the bottom of the corrosion tank; and the seed crystal support platform comprises a support frame symmetrically distrib

Abstract: The invention discloses a method for preparing an indium phosphide crystal by using an indium-phosphorus mixture, belongs to the technical field of semiconductors, and comprises the steps of preparing an indium-phosphorus mixed ball, charging, maintaining the high furnace pressure and the low temperature of the indium-phosphorus mixed ball, melting a covering agent, feeding, synthesizing and crystal growing, which is synthesized by directly melting the proportioned indium-phosphorus mixed ball. Indium powder and phosphorus powder are uniformly mixed and pressed into spherical indium-phosphorus mixed particles, then the mixture of the indium-phosphorus mixed balls and the boron oxide powder is fed into a melt with a boron oxide covering agent, and crystal growth in situ is performed after synthesis.

Abstract: Disclosed is an apparatus for preparing a large-size single crystal, which relates to the field of semiconductor material preparation, and more particularly, to an apparatus for preparing a large-size single crystal from a plurality of small-size single crystals by connecting them in solid states. The apparatus includes a hydrocooling furnace, a solid connection chamber hermetically disposed in the hydrocooling furnace, and combined fixtures provided in the solid connection chamber, wherein a plurality of crystal pieces are fixed by the combined fixtures, a top column or a stress block is used for pressing the crystal piece through the combined fixtures, a heating wire surrounding the solid connection chamber is provided in the hydrocooling furnace, a vacuum tube is communicated with the solid connection chamber, and a thermocouple is disposed close to the combined fixtures.

Abstract: The invention discloses a method for cutting a substrate wafer from an indium phosphide crystal, and belongs to the field of semiconductor substrate preparation, comprises the following steps of: 1) orientating, cutting the head and the tail of a crystal bar, adjusting the orientation and trying to cut the crystal bar until a wafer with a required crystal orientation cut, wherein the cutting end face is an orientation end face; 2) multi-wire cutting, on a multi-wire cutting apparatus, dividing a crystal bar parallel to an orientation end face into wafers; 3) cleaning, cleaning the wafer until no residue and no dirt existing on the surface; 4) circle cutting, performing circle cutting on the wafer to cut the desired crystal orientation area.

Abstract: The invention discloses a device and a method for continuous VGF crystal growth through reverse injection synthesis, relating to a device for preparing a semiconductor crystal and growing a single crystal, in particular to a method and a device for continuously growing the crystal in situ by using a VGF method and reverse injection synthesis. The device includes a furnace body, a crucible, a heat preservation system, a heating system, a temperature control system and an gas pressure regulation system, wherein the crucible is arranged in the furnace body, has a synthesis unit at its upper part, and has a crystal growth unit and a seed crystal unit at its lower part, and the synthesis unit is communicated with the crystal growth unit through capillary pores.

Abstract: A transparent constraint apparatus for the normal deformation of a planar model, including rigid transparent retainer plates, a planar model, and magnetic force components. The magnetic force components are provided at edge positions of the rigid transparent retainer plates; the normal direction of the planar model is parallel to the normal direction of the two rigid transparent retainer plates, and said two retainer plates are symmetrically arranged relative to the plane of symmetry of the planar model; the magnetic force components are symmetrically arranged relative to the plane of symmetry of the planar model, mutually symmetrical magnetic force components producing mutually attractive magnetic force. The transparent constraint apparatus solves the problem of constraining the normal deformation of a planar model under planar-strain conditions during testing.

Abstract: The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth.

Abstract: The invention provides a device and method for continuous VGF crystal growth through rotation after horizontal injection synthesis, and belongs to the technical field of semiconductor crystal synthesis and growth.

Abstract: A gene knockin method and a kit for gene knockin are provided.

Abstract: The present disclosure provide a volume display method and apparatus for smoothly and flexibly displaying a volume change on the premise of ensuring high time effectiveness and accuracy. The method includes: acquiring a volume value of a first audio input during a current time cycle and a volume value of a second audio input during a previous time cycle; determining volume values to be displayed according to the volume values of the first audio input and the second audio input as well as a volume unit or a threshold of the quantity of volume values to be displayed; determining, according to the quantity of the volume values and duration of the time cycle, a unit display time of volume values to be displayed; sequencing all volume values to be displayed; and successively displaying an image that corresponds to each volume value on a device screen according to the unit display time and the sequence.

Abstract: The present disclosure provide a volume display method and apparatus for smoothly and flexibly displaying a volume change on the premise of ensuring high time effectiveness and accuracy. The method includes: acquiring a volume value of a first audio input during a current time cycle and a volume value of a second audio input during a previous time cycle; determining volume values to be displayed according to the volume values of the first audio input and the second audio input as well as a volume unit or a threshold of the quantity of volume values to be displayed; determining, according to the quantity of the volume values and duration of the time cycle, a unit display time of volume values to be displayed; sequencing all volume values to be displayed; and successively displaying an image that corresponds to each volume value on a device screen according to the unit display time and the sequence.

Abstract: A method for determining a lightning hazard distribution of a power network, includes: deriving a shielding failure lightning hazard distribution of the power network and a back flashover lightning hazard distribution of the power network from the number of ground lightning in each grid and ranges of hazardous currents, and deriving a historical lightning hazard distribution of the power network from a lightning faults database of the power network and the grids; and determining the lightning hazard distribution of the power network by integrating the shielding failure lightning hazard distribution of the power network, the back flashover lightning hazard distribution of the power network and the historical lightning hazard distribution of the power network.

Abstract: A method for determining a lightning hazard distribution of a power network, includes: deriving a shielding failure lightning hazard distribution of the power network and a back flashover lightning hazard distribution of the power network from the number of ground lightning in each grid and ranges of hazardous currents, and deriving a historical lightning hazard distribution of the power network from a lightning faults database of the power network and the grids; and determining the lightning hazard distribution of the power network by integrating the shielding failure lightning hazard distribution of the power network, the back flashover lightning hazard distribution of the power network and the historical lightning hazard distribution of the power network.