Abstract: One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl4, and H2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

Abstract: One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

Abstract: One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side and a back side, and the front side mounts substrates. The susceptors are positioned vertically in such a way that the front sides of the susceptors face each other, and the vertical edges of the susceptors are in contact with each other, thereby forming a substantially enclosed narrow channel between the substrates. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas nozzles are controlled in such a way that gas flow directions inside the chamber can be alternated, thereby facilitating uniform material deposition. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.

Abstract: One embodiment provides an apparatus for material deposition. The apparatus includes a reaction chamber, and a pair of susceptors. Each susceptor has a front side mounting substrates and a back side. The front sides of the vertically positioned susceptors face each other, and the vertical edges of the susceptors are in contact with each other. The apparatus also includes a number of gas nozzles for injecting reaction gases. The gas flow directions inside the chamber can be alternated by controlling the gas nozzles. The gas nozzles are configured to inject a small amount of purge gas including at least one of: HCl, SiCl4, and H2 when the gas nozzles are not injecting reaction gas. The apparatus includes a number of heating units situated outside the reaction chamber. The heating units are arranged in such a way that they radiate heat energy directly to the back sides of the susceptors.