Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a first die, and a second die bonded above the first die. The second die may include a front-end-of-line (FEOL) on a bottom side of the second die facing the first die and a backside power delivery network (BSPDN) on a top side of the second die. The semiconductor structure may also include a permanent carrier hybrid bonded above the second die with a power grid directly supplying a power signal to the BSPDN.

Abstract: A semiconductor device including nanosheets transistors that have low capacitance and different threshold voltages is provided. The different threshold voltage are obtained using different shaped semiconductor channel material nanosheets and, in some embodiments, by providing different dopant concentrations to the high-k gate dielectric layers of the nanosheet transistors.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first and a second transistor; a power rail via between the first and the second transistor; a backside via below the power rail via, the backside via having a first portion directly contacting the power rail via and a second portion underneath the first portion; and an isolation spacer surrounding the second portion of the backside via. The backside via further includes a third portion underneath the second portion. A backside capping layer underneath the isolation spacer surrounds the third portion of the backside via. A method of forming the same is also provided.

Abstract: Methods and systems for automatically enhancing UI elements of a content platform in response to an audio-visual cue are provided herein. A user interface (UI) of a content platform to play a media item is provided for presentation on a user device of a user. An occurrence of an audio-visual cue, within the media item, for the user to engage with the UI of the content platform is detected during playback of the media item via the UI of the content platform. A UI element corresponding to the audio-visual cue for the user to engage with the UI of the content platform is identified among the plurality of UI elements of the UI. Causing the corresponding UI element to be enhanced on the UI of the content platform.

Abstract: A semiconductor device includes front end of line (FEOL) devices arranged in a FEOL layer defining a frontside and a backside opposite the frontside. A single composition dielectric material covers the FEOL devices and is disposed in shallow trench isolation regions between the FEOL devices. The dielectric material has voids disposed therein that provide airgaps between the FEOL devices.

Abstract: An array substrate and a manufacturing method thereof are provided. A plurality of groups of bonding terminals are formed on a substrate, a first electrostatic protection wire is formed on a marginal region of the substrate, and a second electrostatic protection wire is formed to connect the bonding terminals and the first electrostatic protection wire.

Abstract: The present disclosure discloses a method for tomato soilless cultivation with suspended trough, including four aspects: setting of soilless cultivation substrate trough, preparation of soilless cultivation substrate, efficient and economical grafting and plant management. The efficient and economical grafting includes seedling raising, preparation of new scion, grafting and healing culture. The plant management includes planting, pruning and vine raising, flower and fruit management, and plant type maintenance. the present disclosure utilizes a soilless cultivation substrate trough, which can overcome the shortcomings of poor water retention, difficult control of temperature and water and fertilizer application in substrate bag cultivation and give full play to the characteristics of the cultivation substrate.

Abstract: Structures for field-effect transistors and methods of forming a structure for field-effect transistors. A semiconductor layer includes first and second channel regions, a first field-effect transistor has a first gate dielectric layer over the first channel region, and a second field-effect transistor has a second gate dielectric layer over the second channel region. The first and second channel regions are each composed of an undoped section of an intrinsic semiconductor material, the first gate dielectric layer contains a first atomic concentration of a work function metal, and the second gate dielectric layer contains a second atomic concentration of the work function metal that is greater than the first atomic concentration of the work function metal in the first gate dielectric layer.

Abstract: An array substrate and a manufacturing method thereof are provided. A plurality of groups of bonding terminals are formed on a substrate, a first electrostatic protection wire is formed on a marginal region of the substrate, and a second electrostatic protection wire is formed to connect the bonding terminals and the first electrostatic protection wire.

Abstract: Structures for field-effect transistors and methods of forming a structure for field-effect transistors. A semiconductor layer includes first and second channel regions, a first field-effect transistor has a first gate dielectric layer over the first channel region, and a second field-effect transistor has a second gate dielectric layer over the second channel region. The first and second channel regions are each composed of an undoped section of an intrinsic semiconductor material, the first gate dielectric layer contains a first atomic concentration of a work function metal, and the second gate dielectric layer contains a second atomic concentration of the work function metal that is greater than the first atomic concentration of the work function metal in the first gate dielectric layer.

Abstract: The present disclosure discloses a method for tomato soilless cultivation with suspended trough, including four aspects: setting of soilless cultivation substrate trough, preparation of soilless cultivation substrate, efficient and economical grafting and plant management. The efficient and economical grafting includes seedling raising, preparation of new scion, grafting and healing culture. The plant management includes planting, pruning and vine raising, flower and fruit management, and plant type maintenance. the present disclosure utilizes a soilless cultivation substrate trough, which can overcome the shortcomings of poor water retention, difficult control of temperature and water and fertilizer application in substrate bag cultivation and give full play to the characteristics of the cultivation substrate.

Abstract: The invention relates to a derivative of 15-oxospiramilacton, particularly to a compound of Formula I or II, or an isomer, a solvate or a pharmaceutically acceptable salt thereof. The invention also relates to a pharmaceutical composition comprising the compound as pharmaceutically active ingredient, a method for preparing the same, and use thereof in manufacture of an anti-tumor agent. The derivative of 15-oxospiramilactone of the invention have an activity against multiple tumor cell lines, and the anti-tumor activity is positively correlated to an activity inhibiting the Wnt signaling pathway.

Abstract: A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, a drain well in each of the raised structures, and a drain in each drain well. The structure further includes an isolation region in each drain well adjacent the drain, each isolation region reaching to a top surface of the corresponding raised structure, and a conductive center gate on each raised structure, the conductive center gate covering a top surface, a front surface and a back surface thereof, and covering a portion of the isolation region opposite the drain. The isolation regions in the drain wells reaching to the raised structure top surface is a result of preserving the isolation region by covering it during fabrication with an HDP oxide to prevent partial removal.

Abstract: A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, a drain well in each of the raised structures, and a drain in each drain well. The structure further includes an isolation region in each drain well adjacent the drain, each isolation region reaching to a top surface of the corresponding raised structure, and a conductive center gate on each raised structure, the conductive center gate covering a top surface, a front surface and a back surface thereof, and covering a portion of the isolation region opposite the drain. The isolation regions in the drain wells reaching to the raised structure top surface is a result of preserving the isolation region by covering it during fabrication with an HDP oxide to prevent partial removal.

Abstract: The invention relates to a derivative of 15-oxospiramilacton, particularly to a compound of Formula I or II, or an isomer, a solvate or a pharmaceutically acceptable salt thereof. The invention also relates to a pharmaceutical composition comprising the compound as pharmaceutically active ingredient, a method for preparing the same, and use thereof in manufacture of an anti-tumor agent. The derivative of 15-oxospiramilactone of the invention have an activity against multiple tumor cell lines, and the anti-tumor activity is positively correlated to an activity inhibiting the Wnt signaling pathway.