Abstract: An array substrate and a manufacturing method thereof are provided. A plurality of groups of bonding terminals are formed on a substrate, a first electrostatic protection wire is formed on a marginal region of the substrate, and a second electrostatic protection wire is formed to connect the bonding terminals and the first electrostatic protection wire.

Abstract: The present disclosure discloses a method for tomato soilless cultivation with suspended trough, including four aspects: setting of soilless cultivation substrate trough, preparation of soilless cultivation substrate, efficient and economical grafting and plant management. The efficient and economical grafting includes seedling raising, preparation of new scion, grafting and healing culture. The plant management includes planting, pruning and vine raising, flower and fruit management, and plant type maintenance. the present disclosure utilizes a soilless cultivation substrate trough, which can overcome the shortcomings of poor water retention, difficult control of temperature and water and fertilizer application in substrate bag cultivation and give full play to the characteristics of the cultivation substrate.

Abstract: Structures for field-effect transistors and methods of forming a structure for field-effect transistors. A semiconductor layer includes first and second channel regions, a first field-effect transistor has a first gate dielectric layer over the first channel region, and a second field-effect transistor has a second gate dielectric layer over the second channel region. The first and second channel regions are each composed of an undoped section of an intrinsic semiconductor material, the first gate dielectric layer contains a first atomic concentration of a work function metal, and the second gate dielectric layer contains a second atomic concentration of the work function metal that is greater than the first atomic concentration of the work function metal in the first gate dielectric layer.

Abstract: An array substrate and a manufacturing method thereof are provided. A plurality of groups of bonding terminals are formed on a substrate, a first electrostatic protection wire is formed on a marginal region of the substrate, and a second electrostatic protection wire is formed to connect the bonding terminals and the first electrostatic protection wire.

Abstract: Structures for field-effect transistors and methods of forming a structure for field-effect transistors. A semiconductor layer includes first and second channel regions, a first field-effect transistor has a first gate dielectric layer over the first channel region, and a second field-effect transistor has a second gate dielectric layer over the second channel region. The first and second channel regions are each composed of an undoped section of an intrinsic semiconductor material, the first gate dielectric layer contains a first atomic concentration of a work function metal, and the second gate dielectric layer contains a second atomic concentration of the work function metal that is greater than the first atomic concentration of the work function metal in the first gate dielectric layer.

Abstract: The present disclosure discloses a method for tomato soilless cultivation with suspended trough, including four aspects: setting of soilless cultivation substrate trough, preparation of soilless cultivation substrate, efficient and economical grafting and plant management. The efficient and economical grafting includes seedling raising, preparation of new scion, grafting and healing culture. The plant management includes planting, pruning and vine raising, flower and fruit management, and plant type maintenance. the present disclosure utilizes a soilless cultivation substrate trough, which can overcome the shortcomings of poor water retention, difficult control of temperature and water and fertilizer application in substrate bag cultivation and give full play to the characteristics of the cultivation substrate.

Abstract: The invention relates to a derivative of 15-oxospiramilacton, particularly to a compound of Formula I or II, or an isomer, a solvate or a pharmaceutically acceptable salt thereof. The invention also relates to a pharmaceutical composition comprising the compound as pharmaceutically active ingredient, a method for preparing the same, and use thereof in manufacture of an anti-tumor agent. The derivative of 15-oxospiramilactone of the invention have an activity against multiple tumor cell lines, and the anti-tumor activity is positively correlated to an activity inhibiting the Wnt signaling pathway.

Abstract: A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, a drain well in each of the raised structures, and a drain in each drain well. The structure further includes an isolation region in each drain well adjacent the drain, each isolation region reaching to a top surface of the corresponding raised structure, and a conductive center gate on each raised structure, the conductive center gate covering a top surface, a front surface and a back surface thereof, and covering a portion of the isolation region opposite the drain. The isolation regions in the drain wells reaching to the raised structure top surface is a result of preserving the isolation region by covering it during fabrication with an HDP oxide to prevent partial removal.

Abstract: A non-planar semiconductor structure includes a semiconductor substrate, multiple raised semiconductor structures coupled to the substrate, a drain well in each of the raised structures, and a drain in each drain well. The structure further includes an isolation region in each drain well adjacent the drain, each isolation region reaching to a top surface of the corresponding raised structure, and a conductive center gate on each raised structure, the conductive center gate covering a top surface, a front surface and a back surface thereof, and covering a portion of the isolation region opposite the drain. The isolation regions in the drain wells reaching to the raised structure top surface is a result of preserving the isolation region by covering it during fabrication with an HDP oxide to prevent partial removal.

Abstract: The invention relates to a derivative of 15-oxospiramilacton, particularly to a compound of Formula I or II, or an isomer, a solvate or a pharmaceutically acceptable salt thereof. The invention also relates to a pharmaceutical composition comprising the compound as pharmaceutically active ingredient, a method for preparing the same, and use thereof in manufacture of an anti-tumor agent. The derivative of 15-oxospiramilactone of the invention have an activity against multiple tumor cell lines, and the anti-tumor activity is positively correlated to an activity inhibiting the Wnt signaling pathway.