Abstract: A packaged lateral semiconductor device includes a resistor connected between the device substrate and a package ground point. The packaged device avoids the drawbacks of a floating substrate, and reduces substrate leakage current and increases breakdown voltage relative to conventionally packaged structures. Moreover, device substrate leakage current and breakdown voltage may be controlled by selecting a value of the resistor. Exemplary devices include high voltage lateral devices such as high-electron mobility transistors (HEMTs), implemented in technologies such as GaN or GaAs, where the packaging achieves high breakdown voltage with improved dynamic behavior.

Abstract: A modified asphalt binder according to the present application includes natural asphalt and petroleum asphalt with a weight ratio of (30-70):(70-30), wherein the ash content in the natural asphalt is up to 60% based on the natural asphalt, and the volume percentage of a trichloroethylene-insoluble-substances with particle size of more than 6 microns in the asphalt binder is less than 10%.

Abstract: A high-modulus asphalt binder of the present application includes 100 parts by weight of asphalt consisting of natural asphalt and petroleum asphalt in a weight ratio of 20-50:80-50, and 1-10 parts by weight of a modifier, wherein the ash content of the natural asphalt is as high as 60 wt % based on the weight of the natural asphalt, and trichloroethylene insoluble particles having a particle size of 10 microns or more in the asphalt binder are in a volume ratio of 5% or less.

Abstract: A method and system for reducing changes in a designated router (DR) of a protocol independent multicast (PIM) protocol are disclosed. The method includes: after a PIM device joins a shared network, an interface of the PIM device receiving a Hello message sent by other PIM device in the shared network, wherein the Hello message carries a DR address option; and the interface of the PIM device using a currently used DR address carried in the Hello message as a DR address of the interface.

Abstract: The present disclosure discloses a method and system for reducing changes in a designated router (DR) of a protocol independent multicast (PIM) protocol. The method includes: after a PIM device joins a shared network, an interface of the PIM device receives a Hello message sent by other PIM device in the shared network, herein the Hello message carries a DR address option; and the interface of the PIM device uses a currently used DR address carried in the Hello message as a DR address of the interface.

Abstract: A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of ˜2.5V is provided. Next, an erasing operation is performed to obtain a negative threshold level which has the uniform distribution along the channel region. Taking into account the over-erasure issue in the erasing course, a programming operation is performed to precisely adjust the threshold voltage to a predetermined level of ?2V˜?1V. Then, with the negative voltage as a new initial state, corresponding programming operation is performed and electrons are locally injected the storage layer. By controlling the quantity of injected electrons, the MLC storage is achieved.

Abstract: A localized trapping multi-level memory cell operating method includes the following steps. First, a localized trapping memory cell with the initial threshold voltage of approximately 2.5V is provided. Next, an erasing operation is performed to obtain a negative threshold level having uniform charge distribution along the channel region. Taking into account the over-erasure issue in the erasing operation, a programming operation is performed to precisely adjust the threshold voltage to a predetermined level of ?2V to ?1V. Then, with this negative voltage as a new initial state, a corresponding programming operation is performed and electrons are locally injected into the storage layer. By controlling the quantity of injected electrons, the MLC storage is achieved.