Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: The present disclosure provides a method and apparatus for unmanned vehicle dispatching management, a device, a storage medium and a program, which relates to autonomous driving and intelligent transportation technology in artificial intelligence. The specific implementation solution includes: receiving an unmanned vehicle dispatching request; determining, according to the unmanned vehicle dispatching request, a first task type corresponding to a first unmanned vehicle to be dispatched; generating a first order corresponding to the first unmanned vehicle, where the first order is used to indicate a driving task to be performed by the first unmanned vehicle, and a type of the driving task is the first task type; and sending the first order to the first unmanned vehicle. Through the above process, a dispatching management of unmanned vehicles is realized from the task dimension, so that there is no need to distinguish the types of unmanned vehicles.

Abstract: An array substrate is provided. The array substrate includes a base substrate and a plurality of gate lines, a plurality of data lines, a common electrode layer and a plurality of pixel units arranged in an array disposed on the base substrate. Each of the pixel units includes a plurality of sub-pixel units defined by gate lines and data lines disposed to intersect each other laterally and vertically. The common electrode layer includes a plurality of common electrode blocks that double as self-capacitance electrodes, each of the common electrode blocks is connected with at least one wire, and the wires are in the middle of sub-pixel units of a same column.

Abstract: This application relates to the field of display technologies, to resolve a problem of collapsing or bulging of edges of reflective films in existing direct backlight modules, and provides a reflective film, a backlight module, and a display apparatus. The reflective film includes a reflective layer and a coating layer. The reflective layer includes a bottom and inclined parts extending around the bottom, folding lines are provided between the inclined parts and the bottom, and when the reflective film is folded along the folding lines, the inclined parts are inclined along peripheral edges of the bottom toward a side away from the bottom, and the bottom and the inclined parts together form an accommodating space. A plurality of through holes are provided at intervals in the bottom, and the inclined parts each include a front side facing the accommodating space and a rear side opposite to the front sides.

Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.

Abstract: A light-emitting device includes a semiconductor epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer, and having holes; a first insulation layer disposed on the semiconductor epitaxial structure and having first and second grooves; a first pad electrically connected to the first semiconductor layer through the first grooves; and a second pad electrically connected to the second semiconductor layer through the second grooves. A projection of the first pad does not overlap projections of the holes. A projection of the second pad does not overlap the projections of the holes. The first pad includes a first pad connection portion and first pad extension portions; the second pad includes a second pad connection portion and second pad extension portions. Projections of the second grooves fall between projections of the first and second pad extension portions. Two other aspects of the light-emitting device are also provided.

Abstract: Provided is an LED chip, which includes a semiconductor stack layer and an insulating layer on the semiconductor stack layer. The insulating layer at least includes a first insulating layer and a second insulating layer. The insulating layer has a step structure including a first step formed by the first insulating layer and a second step formed by the second insulating layer. The first step extends beyond the second step in a horizontal direction. Since the insulating layer is formed by at least the first insulating layer and the second insulating layer, crack or whole-layer breaking of the insulating layer is avoided. The extended portion of the first insulating layer can play a buffering role, thereby reducing a stress generated inside the second structural layer, avoiding the second structural layer from cracking or whole-layer breaking, and improving the reliability of the LED chip.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.

Abstract: A light-emitting diode chip includes a light-emitting unit, a first electrode, an insulating layer, and a second electrode. The first electrode is disposed on the light-emitting unit. The insulating layer is disposed on the first electrode and the light-emitting unit, and has a through hole and a hole-defining wall. The hole-defining wall has a top peripheral edge that has two opposite end points. A projection of at least one of the end points of the top peripheral edge on the light-emitting unit falls outside a projection of a top surface of the first electrode on the light-emitting unit. The second electrode is disposed on the insulating layer and fills the through hole to electrically connect to the first electrode.

Abstract: A light-emitting diode (LED) includes a substrate, an epitaxial structure disposed on the substrate, and first and second electrode units disposed on the epitaxial structure. The first and second electrode units are electrically connected to first and second semiconductor layers of the epitaxial structure, respectively. A surface of the epitaxial structure opposite to the substrate has an operating zone to be pushed by an ejector pin during a packaging process. A projection of the second electrode unit on the substrate bypasses a projection of the operating zone on the substrate, and extends toward the first electrode unit.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: A light-emitting device includes: a light-emitting mesa structure having a first top surface and a peripheral surface connected to the first top surface; a transparent conductive layer that is disposed on the first top surface and that has a second top surface; a first insulating structure that is at least disposed on the peripheral surface and that has a third top surface and an inner tapered surface indented from the third top surface, the inner tapered surface having an acute angle with respect to the second top surface; and a reflective layer that is disposed on the transparent conductive layer and that has a first side surface in contact with the inner tapered surface. A method for manufacturing the light-emitting device is also disclosed.

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

Abstract: The present invention is directed to a unitary bathroom which includes an upper back panel, a lower back panel, a base, and side panels all of which are formed by aluminum honeycomb composite boards or paper honeycomb composite boards. The invention also relate to connection among above the upper back panel, lower back panel, base, side panels and ceiling. The unitary bathroom constructed according to the invention is reliable, and structurally stable. The bathroom will not be loosened after long term use. In addition, the unitary bathroom made of aluminum honeycomb composite board is lightweight, strong, and has good stiffness. The coating material may be freely selected from ceramic, artificial stone, natural stone, aluminum alloy, stainless steel, zinc coated steel plate, fire proof plate, SMC and plastic. Moreover, it has strong shock proof ability and high fire proof ability. No deformation and aging will occur after long term use.

Abstract: The present invention is directed to a unitary bathroom which includes an upper back panel, a lower back panel, a base, and side panels all of which are formed by aluminum honeycomb composite boards or paper honeycomb composite boards. The invention also relate to connection among above the upper back panel, lower back panel, base, side panels and ceiling. The unitary bathroom constructed according to the invention is reliable, and structurally stable. The bathroom will not be loosened after long term use. In addition, the unitary bathroom made of aluminum honeycomb composite board is lightweight, strong, and has good stiffness. The coating material may be freely selected from ceramic, artificial stone, natural stone, aluminum alloy, stainless steel, zinc coated steel plate, fire proof plate, SMC and plastic. Moreover, it has strong shock proof ability and high fire proof ability. No deformation and aging will occur after long term use.