Abstract: The present application discloses a method for manufacturing a SONOS memory, including: providing a substrate, wherein a first transistor gate of the SONOS memory and a first layer used for forming a second transistor gate are formed on the substrate; forming a patterned second layer on the upper surface of the first layer, wherein the second layer exposes the first layer corresponding to the outer side of the second transistor gate; performing first etching on the first layer exposed by the second layer; removing the second layer; and performing second etching on the first layer to form the second transistor gate. The present application also discloses a SONOS memory. The present application can form a vertical structure outside a selective transistor and a storage transistor, thus forming a vertical side wall in the subsequent process, so as to improve the performance of the device.

Abstract: Disclosed are a multi-modality molecular imaging probe, and a preparation method and use thereof. The multi-modality molecular imaging probe has an ABA structure, with a magnetic functional unit of a gadolinium complex at the center, and two identical phosphorescent functional units of an iridium complex, which are reasonably integrated into the same one complex molecule. The multi-modality molecular imaging probe simultaneously introduces two optical functional units of the iridium complex and one magnetic functional unit of a gadolinium chelate in the same one complex molecule, which exhibits magnetic-optical dual functional properties. It therefore could be used to prepare both a contrast agent for magnetic resonance imaging and an optical probe for optical imaging.

Abstract: A target detection method based on fusion of vision, lidar and millimeter wave radar comprises: obtaining original data detected by a camera, a millimeter wave radar, and a lidar, and synchronizing the millimeter wave radar, the lidar, and the camera in time and space; performing a calculation on the original data detected by the millimeter wave radar according to a radar protocol; generating a region of interest by using a position, a speed, and a radar reflection area obtained from the calculation; extracting feature maps of a point cloud bird's-eye view and the original data detected by the camera; projecting the region of interest onto the feature maps of the point cloud bird's-eye view and the original data detected by the camera; fusing the feature maps of the point cloud bird's-eye view and the original data detected by the camera, and processing a fused image through a fully connected layer.

Abstract: Provided are hybrid passive power filter and a three-phase power system. The hybrid passive power filter includes: a series passive harmonic isolation unit, a parallel passive filtering unit, and a harmonic load; the series passive harmonic isolation unit has an input terminal electrically connected to a power grid and an output terminal electrically connected to a first terminal of the harmonic load, and the series passive harmonic isolation unit is configured to isolate harmonics; and the parallel passive filtering unit has an input terminal electrically connected to the output terminal of the series passive harmonic isolation unit and an output terminal electrically connected to a second terminal of the harmonic load, and the parallel passive filtering unit is configured to filter out harmonics.

Abstract: Disclosed is a carbon dioxide heat pump evaporator, comprising side evaporators having defrosting water flow channels formed thereon, an evaporator tray which is arranged at the bottoms of the side evaporators and is used for supporting the side evaporators, and a defrosting drainage system, wherein the defrosting drainage system comprises a plurality of defrosting electric heating tubes inserted into the side evaporators, water receiving gutters which are connected to the defrosting water flow channels, gutter electric heating mechanisms for heating the water receiving gutters, and drainage pipes which are connected to the water receiving gutters and are provided with conduit electric heating tracing bands; and the evaporator tray, the water receiving gutters and the drainage pipes are sequentially arranged from top to bottom.

Abstract: Provided is an on-line ice-melting apparatus. The apparatus is configured for melting the ice on a three-phase line. The apparatus includes an adjustable reactor, a grounding transformer, a controller, and an auxiliary circuit. The grounding transformer, the adjustable reactor, the auxiliary circuit, and a line of any phase of the three-phase line form a first control loop. The adjustable reactor includes a working winding, a control winding, and a short-circuit winding. The working winding is connected between the grounding transformer and the auxiliary circuit. The controller is electrically connected to the control winding and the short-circuit winding separately.

Abstract: The present application discloses a method for manufacturing a high-voltage metal gate device. After the deposition of a gate metal through a normal process, in CMP processes performed to the gate metal, firstly a first CMP process is performed to thin the gate metal to a certain thickness in advance, then a blocking dielectric layer is deposited, a large-area high-voltage gate region is opened through photolithography, and the blocking dielectric layer other than the blocking dielectric layer in the large-area high-voltage gate region is removed through etching. In a second CMP process performed to the gate metal, due to the blocking dielectric layer on the surface of the large-area gate metal in the high-voltage gate region, the polishing speed is slow, and CMP dishing will not be caused.

Abstract: Provided is an on-line ice-melting apparatus. The apparatus is configured for melting the ice on a three-phase line. The apparatus includes an adjustable reactor, a grounding transformer, a controller, and an auxiliary circuit. The grounding transformer, the adjustable reactor, the auxiliary circuit, and a line of any phase of the three-phase line form a first control loop. The adjustable reactor includes a working winding, a control winding, and a short-circuit winding. The working winding is connected between the grounding transformer and the auxiliary circuit. The controller is electrically connected to the control winding and the short-circuit winding separately.

Abstract: A constant-temperature water supply system employing a carbon dioxide heat pump includes a primary side loop, a secondary side water supply pipeline, a carbon dioxide heat pump water heater in the primary side loop, and a heat exchanger between the primary side loop and the secondary side water supply pipeline; the temperature of return water is detected and the temperature of a return water tank is detected, so even if the temperature of return water flowing out of a first heat exchange tube fluctuates, the return water can be input at a position in the return water tank having a close temperature, such that water in the return water tank is always in a stably layered state, and therefore allows for constant-temperature water supply.

Abstract: Provided are hybrid passive power filter and a three-phase power system. The hybrid passive power filter includes: a series passive harmonic isolation unit, a parallel passive filtering unit, and a harmonic load; the series passive harmonic isolation unit has an input terminal electrically connected to a power grid and an output terminal electrically connected to a first terminal of the harmonic load, and the series passive harmonic isolation unit is configured to isolate harmonics; and the parallel passive filtering unit has an input terminal electrically connected to the output terminal of the series passive harmonic isolation unit and an output terminal electrically connected to a second terminal of the harmonic load, and the parallel passive filtering unit is configured to filter out harmonics.

Abstract: Disclosed are a carbon dioxide overlapping type heating system and a control method therefor. The heating system comprises a low-temperature stage loop, a high-temperature stage loop and a heat supply loop, wherein a low-temperature stage compressor (3) and a high-temperature stage compressor (7) are both variable-frequency compressors; and a water pump (10) is a variable-frequency water pump.

Abstract: A multi-parallel carbon dioxide heat pump control method based on target load control, wherein the multi-parallel carbon dioxide heat pump comprises a carbon dioxide circulation loop, a heat source pipeline and a hot water pipeline, and the control method comprises: adjusting the opening degree of an electronic expansion valve (3) according to the temperature of an inlet of the hot water pipeline, the temperature of an outlet of the hot water pipeline, the flow in the hot water pipeline and a target outlet temperature set by a user, such that the steady-state change of system pressure can be realized by adjusting the electronic expansion valve (3) on the basis of the fluctuation of parameters such as user side temperature and flow, thus a target outlet temperature change curve is rapidly and stably converged to a target value, and the outlet temperature can be rapidly stabilized.

Abstract: A target detection method based on fusion of vision, lidar and millimeter wave radar comprises: obtaining original data detected by a camera, a millimeter wave radar, and a lidar, and synchronizing the millimeter wave radar, the lidar, and the camera in time and space; performing a calculation on the original data detected by the millimeter wave radar according to a radar protocol; generating a region of interest by using a position, a speed, and a radar reflection area obtained from the calculation; extracting feature maps of a point cloud bird's-eye view and the original data detected by the camera; projecting the region of interest onto the feature maps of the point cloud bird's-eye view and the original data detected by the camera; fusing the feature maps of the point cloud bird's-eye view and the original data detected by the camera, and processing a fused image through a fully connected layer.

Abstract: The present disclosure provides a SONOS memory structure and a manufacturing method therefor. The SONOS memory structure including a substrate and a select transistor gate and a memory transistor gate formed on the substrate, wherein the substrate is a composite substrate including a base silicon layer, a buried oxide layer and a surface silicon layer, wherein the upper portion of the base silicon layer has a memory transistor well region formed therein; the select transistor gate and the memory transistor gate are formed on the surface silicon layer; the select transistor gate comprises a first select transistor gate and a second select transistor gate, the first select transistor gate and the second select transistor gate are respectively located at two sides of the memory transistor gate, and are electrically isolated from the memory transistor gate by first spacers on both sides of the memory transistor gate.

Abstract: The present invention provides a 1.5T SONOS memory structure and a manufacturing method, comprises a P-well and a storage well on its side, gates of a select transistor and a storage transistor; the height of the select transistor gate is less than the height of the storage transistor gate, an stack layer is between the gats of the select transistor and the storage transistor which height is same as the storage transistor gate; the top of the select transistor gate has a first sidewall; the sidewall of the select transistor gate has a second sidewall. The present invention strengthens the isolation between the gates of the select transistor and the storage transistor, reduces the risk of current leakage, enables the metal silicide to also grow on the gate of the select transistor, reduces the resistance of the select transistor and improves the performance of the device.

Abstract: The invention provides a method for manufacturing a SONOS memory, including: providing a substrate, wherein a selective transistor gate and a storage transistor gate are formed on the substrate of a storage area; forming a silicon epitaxial layer on the upper surface of the substrate of the storage area on both sides of the selective transistor gate and on both sides of the storage transistor gate, wherein the silicon epitaxial layer is used to separately form a source and a drain of a selective transistor and a storage transistor; and forming a metal salicide layer on an upper portion of the silicon epitaxial layer. The present application further provides the SONOS memory. The present application can improve the yield of the formed SONOS memory and effectively improve the device performance of the formed SONOS memory, and the device performance of the formed SONOS memory can be effectively improved.

Abstract: The present application discloses a method for manufacturing a SONOS memory, including: providing a substrate, wherein a first transistor gate of the SONOS memory and a first layer used for forming a second transistor gate are formed on the substrate; forming a patterned second layer on the upper surface of the first layer, wherein the second layer exposes the first layer corresponding to the outer side of the second transistor gate; performing first etching on the first layer exposed by the second layer; removing the second layer; and performing second etching on the first layer to form the second transistor gate. The present application also discloses a SONOS memory. The present application can form a vertical structure outside a selective transistor and a storage transistor, thus forming a vertical side wall in the subsequent process, so as to improve the performance of the device.

Abstract: The present invention discloses a SONOS memory in which two storage gates in a storage unit are self-aligned on the side of a selection gate, states of information stored in two storage gates in the same storage unit being opposite, the storage information of the storage unit being judged by comparing the magnitude of reading currents corresponding to two storage gates. The present invention further discloses a method for manufacturing a SONOS memory. The present invention can improve the reliability of the product and reduce the area of the device at the same time.

Abstract: The present invention provides a 1.5T SONOS memory structure and a manufacturing method, comprises a P-well and a storage well on its side, gates of a select transistor and a storage transistor; the height of the select transistor gate is less than the height of the storage transistor gate, an stack layer is between the gats of the select transistor and the storage transistor which height is same as the storage transistor gate; the top of the select transistor gate has a first sidewall; the sidewall of the select transistor gate has a second sidewall. The present invention strengthens the isolation between the gates of the select transistor and the storage transistor, reduces the risk of current leakage, enables the metal silicide to also grow on the gate of the select transistor, reduces the resistance of the select transistor and improves the performance of the device.

Abstract: The present invention discloses a SONOS memory in which two storage gates in a storage unit are self-aligned on the side of a selection gate, states of information stored in two storage gates in the same storage unit being opposite, the storage information of the storage unit being judged by comparing the magnitude of reading currents corresponding to two storage gates. The present invention further discloses a method for manufacturing a SONOS memory. The present invention can improve the reliability of the product and reduce the area of the device at the same time.