Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor, a chlorine-containing precursor, and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A silicon-containing material and a silicon-and-germanium-containing material may be disposed on the substrate. The methods may include contacting the substrate with the fluorine-containing precursor, the chlorine-containing precursor, and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of the silicon-containing material from the substrate.

Abstract: Exemplary semiconductor processing methods may include providing a fluorine-containing precursor and a secondary precursor to a processing region of a semiconductor processing chamber. The secondary precursor may be or include a carbon-containing precursor, a hydrogen-containing precursor, a nitrogen-containing precursor, or an oxygen-containing precursor. A substrate may be housed within the processing region. A silicon-containing material and a silicon-and-germanium-containing material may be disposed on the substrate. The methods may include contacting the substrate with the fluorine-containing precursor and the secondary precursor. The methods may include selectively removing at least a portion of the silicon-and-germanium-containing material from the substrate. The processing region may be maintained at a temperature of greater than or about 200° C.

Abstract: Exemplary semiconductor processing methods may include providing a boron-containing etchant precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The methods may include providing a hydrogen-containing precursor, helium, or both to the processing region with the boron-containing etchant precursor. The methods may include contacting the substrate with the boron-containing etchant precursor and the hydrogen-containing precursor. The methods may include selectively removing at least a portion of a first material on the substrate relative to a second material second material on the substrate while removing an etch byproduct from one or more surfaces of the processing region.

Abstract: Exemplary semiconductor processing methods may include providing an etchant precursor and an oxygen-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing material and an exposed region of a second material. The methods may include contacting the substrate with the etchant precursor and the oxygen-containing precursor. The methods may include selectively removing at least a portion of the metal-containing material relative to the second material.

Abstract: Memory holes and other high aspect-ratio features in 3D NAND structures may include metal liners that are etched away as part of the manufacturing process. The etch process may include a prime step performed before a main etch process is performed. The prime step may include providing a helium precursor to treat the metal in a memory hole remove residue on the surface of the metal. The prime may also include providing a hydrogen precursor to further remove residue on the surface of the metal, and providing an oxygen-containing precursor and to form an oxidized portion of the metal. The prime may further include providing a halide precursor and contacting the oxidized portion of the metal to remove the oxidized portion of the metal from the sidewall of the memory hole, and treating the metal with hydrogen to remove residual metal oxide.

Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.

Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a metal-containing hardmask material and an exposed region of a material characterized by a dielectric constant of less than or about 4.0. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the metal-containing hardmask material.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: Exemplary semiconductor processing methods may include flowing an etchant precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may define an exposed region of a titanium-containing material. The methods may include contacting the substrate with the etchant precursor. The methods may include removing at least a portion of the titanium-containing material.

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a semiconductor processing chamber, where a substrate may be positioned. The substrate may include a trench formed between two columns and molybdenum-containing metal regions in a plurality of recesses formed in at least one of the columns. At least two of the molybdenum-containing metal regions may be connected by a molybdenum-containing first liner formed on at least a portion of a sidewall of the trench. The methods may include forming a plasma of the oxygen-containing precursor. The methods may include contacting the molybdenum-containing first liner with plasma effluents of the oxygen-containing precursor, thereby forming an oxidized portion of molybdenum. The methods may include providing a halide precursor. The methods may include contacting oxidized portion of the molybdenum with plasma effluents of the halide precursor, thereby removing the oxidized portion of molybdenum from the sidewall of the trench.

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: Exemplary etching methods may include modifying an exposed surface of a layer of metal oxide on a substrate housed in a processing region of a semiconductor processing chamber to produce a modified portion of metal oxide. The methods may include contacting the modified portion of metal oxide with a fluorine-containing precursor. The contacting may produce a metal oxy-fluoride material. The methods may include flowing an etchant precursor into the processing region. The methods may include contacting the metal oxy-fluoride material with the etchant precursor. The methods may include removing the metal oxy-fluoride material.

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of a transition metal nitride and an exposed region of a metal. The contacting may form an oxidized portion of the transition metal nitride and an oxidized portion of the metal. The methods may include forming a plasma of a fluorine-containing precursor and a hydrogen-containing precursor to produce fluorine-containing plasma effluents. The methods may include removing the oxidized portion of the transition metal nitride to expose a non-oxidized portion of the transition metal nitride. The methods may include forming a plasma of a chlorine-containing precursor to produce chlorine-containing plasma effluents. The methods may include removing the non-oxidized portion of the transition metal nitride.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: Exemplary etching methods may include flowing an oxygen-containing precursor into a processing region of a semiconductor processing chamber. The methods may include contacting a substrate housed in the processing region with the oxygen-containing precursor. The substrate may include an exposed region of ruthenium, and the contacting may produce ruthenium tetroxide. The methods may include vaporizing the ruthenium tetroxide from a surface of the exposed region of ruthenium. An amount of oxidized ruthenium may remain. The methods may include contacting the oxidized ruthenium with a hydrogen-containing precursor. The methods may include removing the oxidized ruthenium.