Abstract: A thin-film transistor, a display panel, and a display device are provided. The thin-film transistor includes an active layer and a gate disposed on a side of the active layer; a material of the active layer includes an oxide semiconductor material and a first metal element doped in the oxide semiconductor material, and the first metal element includes terbium.

Abstract: The present disclosure provides an array substrate and a display panel. The array substrate includes a base substrate and a first transistor and a second transistor disposed on the base substrate. A mobility of a first active layer of the first transistor is different from a mobility of a second active layer of a second transistor. At most one gate insulating layer is provided between the first active layer and the second active layer, and the first active layer is located in a non-perpendicular direction of the second active layer. One of a first gate, the first active layer, and a first source of the first transistor is disposed in the same layer as a second gate of the second transistor.

Abstract: The application provides a semiconductor device and a display panel. The display panel includes a semiconductor device. The semiconductor device includes an active layer made of a semiconductor material. The semiconductor material is doped with tantalum, and at least one of terbium and praseodymium. The semiconductor material includes a metal oxide semiconductor material.

Abstract: A display panel, a method for manufacturing the display panel, and a display device. The display panel includes a substrate, a buffer layer, an active layer, a gate insulating layer, and a gate layer. At least one of the buffer layer and the gate insulating layer has a laminated structure formed by stacking two layers of the same material, and the hydrogen content in the film layer of the laminated structure adjacent to the active layer is lower than that in the film layer of the laminated structure away from the active layer. The active layer is provided as a laminated structure formed by the first active sublayer and the second active sublayer, and the mobility of the first active sublayer is made greater than that of the second active sublayer.

Abstract: A display panel and a display device are provided. The display panel includes a first thin film transistor located in a display area. The first thin film transistor includes a first gate and a second gate, and the first gate is located on a side of the second gate away from the first electrode. The first gate includes a semiconductor portion and a conductor portion connected to each other, and the conductor portion is located on a side of the semiconductor part close to the second electrode. In a thickness direction, the second gate overlaps the first channel, and the semiconductor portion partially overlaps the first channel and the second gate.

Abstract: A display panel and a method for manufacturing the display panel, and a display device are provided. An interlayer dielectric layer covers a first active portion and a side of a first gate away from a substrate. The interlayer dielectric layer is provided with a first contact hole and a second contact hole. A depth of the first contact hole is less than a depth of the second contact hole. The first contact hole exposes the first active portion. The second contact hole exposes a light shielding portion. The first contact hole includes a first upper hole and a first lower hole. The second contact hole includes a second upper hole and a second lower hole. A depth of the second upper hole is equal to a depth of the first upper hole. A depth of the second lower hole is greater than a depth of the first lower hole.

Abstract: The present disclosure provides a display device including a display panel. The display panel includes driving circuits in a plurality of cascaded stages, each of the driving circuits includes a gate driving signal sub-circuit, an initialization signal sub-circuit, and a reference signal sub-circuit. The gate driving signal sub-circuit, the initialization signal sub-circuit, and the reference signal sub-circuit each includes a plurality of oxide semiconductor transistors. A bottom gate of the oxide semiconductor transistor which is prone to negative bias effect is electrically connected to a potential control signal input terminal.

Abstract: A display panel, a method for preparing a display panel, and a display device are provided. The display panel includes a substrate, a light shielding layer, a second electrode plate, a first source-drain layer and a second source-drain layer, the light shielding layer includes a first electrode plate, the first source-drain layer includes a conductive electrode, the second source-drain layer is disposed on a side of the first source-drain layer away from the substrate, and the second source-drain layer includes a third electrode plate. The third electrode plate is used as a capacitor electrode, the third electrode plate is extended toward a direction of the second electrode plate, and the third electrode plate is electrically connected to the first electrode plate through the conductive electrode, so that the third electrode plate, the second electrode plate and the first electrode plate are overlapped to form a capacitor.

Abstract: A thin film transistor and a display panel are provided. The thin film transistor includes an active layer including a first semiconductor layer, the first semiconductor layer includes a metal oxide conductor material and a metal element M doped in the metal oxide conductor material, and the metal element M is at least one element selected from the group consisting of lanthanide elements and transition elements.

Abstract: The application provides a semiconductor device and a display panel. In an embodiment, the semiconductor device includes an active layer made of a semiconductor material. The semiconductor material is doped with tin, and at least one of terbium and praseodymium. The semiconductor material includes a metal oxide semiconductor material.

Abstract: An array substrate, a method for manufacturing the same, and a display panel are provided. The array substrate includes a pixel arrangement area and a non-pixel arrangement area adjacent to the pixel arrangement area, and further includes a first transistor disposed in the pixel arrangement area and a second transistor disposed in the non-pixel arrangement area, where the first transistor includes a first active portion, the second transistor includes a second active portion, the first active portion includes a first metal oxide material, the second active portion includes a second metal oxide material different from the first metal oxide material, and a mobility of the second active portion is greater than a mobility of the first active portion.

Abstract: A display panel and a display device are provided. The display panel includes a first thin film transistor and a capacitor disposed in a region where a pixel opening is provided, the capacitor includes at least three electrode plates stacked and spaced apart, and a difference between a height of the first thin film transistor and a height of the capacitor is less than 4500 angstroms based on a surface of a substrate close to an anode.

Abstract: The present disclosure provides a display device including a display panel. The display panel includes driving circuits in a plurality of cascaded stages, each of the driving circuits includes a gate driving signal sub-circuit, an initialization signal sub-circuit, and a reference signal sub-circuit. The gate driving signal sub-circuit, the initialization signal sub-circuit, and the reference signal sub-circuit each includes a plurality of oxide semiconductor transistors. A bottom gate of the oxide semiconductor transistor which is prone to negative bias effect is electrically connected to a potential control signal input terminal.

Abstract: A magnetic attraction component is provided. The magnetic attraction component includes a magnet unit. The magnet unit includes a plurality of magnets. Two adjacent magnets, in the plurality of magnets, that repulse each other are welded. This application may be applied to an electronic device such as a mobile phone.

Abstract: A display device is provided and includes: a plurality of display modules disposed on the first bearing surface, each of the display modules including a plurality of display units; a plurality of first functional elements located on the first bearing surface, and each of the first functional elements disposed between any two of the display units; and a plurality of second functional elements located on the second bearing surface; wherein a function of each of the second functional elements is the same as a function of each of the first functional elements, and processing capability of each of the second functional elements is different from processing capability of each of the first functional elements.

Abstract: Disclosed are a quantum dot, a photoelectric device, and an electronic apparatus. In a radial direction, the quantum dot includes a core, a first layer wrapping the core, and a second layer wrapping the first layer disposed sequentially. A band gap of the first layer is less than a band gap of the core, and the band gap of the first layer is less than a band gap of the second layer. The quantum dot has a well structure, thereby being beneficial to improve a fluorescence quantum efficiency of the quantum dot.

Abstract: An electrolyte solution provided in the present application contains sodium salt and lithium salt. A deposition overpotential of lithium metal in the electrolyte solution is higher than a deposition overpotential of sodium metal. The electrolyte solution has film-forming selectivity, which is beneficial to improving the cycling performance of the secondary battery. The secondary battery provided in the present application includes the electrolyte solution and a positive electrode sheet. An active material in the positive electrode sheet includes a sodium-ion positive electrode active material and a lithium-ion positive electrode active material, and a charging plateau voltage of the sodium-ion positive electrode active material in the battery is lower than a charging plateau voltage of the lithium-ion positive electrode active material in the battery.

Abstract: The embodiment of the present application discloses a display device, a display system and a distributed function system. The initial pixel driving data corresponding to the image to be displayed, which is received, is segmented into a plurality of pixel driving data blocks by the management chip. With the display screen comprising a plurality of display modules, and the pixel driving data blocks are written to the driving circuits of the corresponding display modules through the data connection lines based on control signals. The driving circuit is employed to drive pixels in the display module to work according to the pixel driving data block, which is received to meet the display requirements of full HD and resolutions above full HD.

Abstract: Provided in the embodiments of the present application are a quantum dot film, and a quantum dot light-emitting diode and a preparation method therefor. The quantum dot film comprises a first quantum dot, a second quantum dot and a first ligand. By means of the first ligand, first excitons generated by the first quantum dot can be stacked with second excitons generated by the second quantum dot, and the quantum dots of the whole hybrid system have the advantages of quantum dots of two different types by means of the stacking effect between the excitons, such that the light emission performance of the quantum dot light-emitting diode is improved.

Abstract: A micro-sampling mixer and a micro-reaction system are disclosed. The micro-sampling mixer includes a sample injection channel, a diluent injection channel, a mixing channel, and a connecting portion. One end of the sample injection channel is in communication with the mixing channel, and another end thereof is a sample input end. One end of the diluent injection channel is in communication with the mixing channel, and another end thereof is a diluent input end. The connecting portion is arranged on the mixing channel, and the connecting portion is connected to an external light detection device so as to perform light detection on a sample in the mixing channel.