Abstract: In some examples, a semiconductor package comprises an electrically conductive surface and a bond wire coupled to the electrically conductive surface. The bond wire includes a first stitch bond coupled to the electrically conductive surface, and a second stitch bond contiguous with the first stitch bond and coupled to the electrically conductive surface. The second stitch bond is partially, but not completely, overlapping with the first stitch bond.

Abstract: A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

Abstract: A semiconductor package includes a semiconductor die; a die pad having a first surface coupled to the semiconductor die and a second surface opposite the first surface, the die pad including an extension that comprises a first V-shaped groove in the second surface; a first conductive terminal having first and second ends and a third surface facing a same direction as the second surface, the third surface comprising a second V-shaped groove; a second conductive terminal having third and fourth ends and a fourth surface facing the same direction as the second surface, the fourth surface comprising a third V-shaped groove, the extension in between the second and fourth ends; and a mold compound covering the die, the die pad, and the first and second conductive terminals, the mold compound filling the first, second, and third V-shaped grooves, and the first and third ends extending to an exterior of the mold compound.

Abstract: In some examples, a semiconductor package comprises an electrically conductive surface and a bond wire coupled to the electrically conductive surface. The bond wire includes a first stitch bond coupled to the electrically conductive surface, and a second stitch bond contiguous with the first stitch bond and coupled to the electrically conductive surface. The second stitch bond is partially, but not completely, overlapping with the first stitch bond.

Abstract: A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

Abstract: A semiconductor device includes a semiconductor die having a die surface, in which the die surface includes a bond pad. A ball bond has a distal surface and flattened-disk shape extending from the distal surface and terminating in a proximal surface spaced apart from the distal surface. The distal surface is coupled to the bond pad and a channel extends a depth into the proximal surface surrounding a central portion of the proximal surface. A bond wire extending from the central portion of the proximal surface, in which the channel is spaced apart from and surrounds the bond wire.

Abstract: An example semiconductor package comprises a semiconductor die having a top surface, a bond pad formed on the top surface, a bond wire having a first end and a second end, wherein the first end is attached to the bond pad. The semiconductor package having a contact pad, wherein the second end of the wire bond is attached to the contact pad by a stitch bond, the stitch bond having a plateau region formed between a cut end and a ramped portion, wherein a bottom surface of the plateau region forms an attachment to the contact pad.

Abstract: In some examples, a semiconductor package comprises an electrically conductive surface and a bond wire coupled to the electrically conductive surface. The bond wire includes a first stitch bond coupled to the electrically conductive surface, and a second stitch bond contiguous with the first stitch bond and coupled to the electrically conductive surface. The second stitch bond is partially, but not completely, overlapping with the first stitch bond.

Abstract: A semiconductor package includes a leadframe including a die pad and a plurality of leads including a first lead, wherein the first lead includes a first ball bond. A semiconductor die having a plurality of bond pads including a first bond pad is on the die pad including a second ball bond on the first bond pad and a stitch bond on the second ball bond. A first wirebond connection is between the first ball bond and the stitch bond.