Abstract: The present invention relates to the fields of microorgan-isms, feed, food and ecological restoration, in particular to a strain for degrading deoxynivalenol (DON) and the use thereof. The strain has the deposit number CCTCC No. M 2020565. The strain can grow by means of taking the toxic compound DON as a sole carbon source, and convert the DON into chemical components for itself. The reaction process is irreversible, the reaction conditions are moderate, and secondary pollu-tion cannot be caused. The strain provided in the present invention can be used for preparing a biological detoxification preparation for DON. The strain provided in the present invention can be used for degrading DON in feed and food raw materials, primary processing products, deep processing products and related processing byproducts. The strain provided in the present invention can be applied to various ecosystems such as soil or bodies of water polluted by DON to achieve the purposes of DON degradation and ecological restoration.

Abstract: A composition of drug targets and the use the method of using thereof. The composition comprises a vector and a drug using FKBP10 and PCOLCE genes and/or the encoded proteins thereof as drug targets.

Abstract: One example of a nestable-stackable wider-based disposable container is composed of a plastic-coated paper frustoconical tube having its wider end edge connected continuously to the mouth of a plastic bag whose capacity is larger than the tube size. For storage, let the wide end of one container to receive the narrow end of another container. The plastic bag of the former is forced to push up inwardly and to cleave tightly to the paper side wall, allowing the later to be compactly nested into the former. For usage, one stands a container on its non-tipping wider end, places items in via its upper narrower opening, discards it as a whole unit when done. Other examples are described and shown.

Abstract: An image sensor includes: a pixel, which includes a radiation sensing element, and an isolation structure between adjacent pixels configured to converge radiation propagating in the isolation structure to reduce radiation crosstalk between adjacent pixels.

Abstract: A wafer bonding method comprises providing a first wafer and a second wafer, the first wafer having a first metal layer and a first insulating layer at a first surface thereof, the second wafer having a second metal layer and a second insulating layer at a first surface thereof, the first metal layer and the second metal layer comprising a same metal material; pretreating one or both of the first wafer and the second wafer, so that whiskers of the metal material are formed at a surface or surfaces of the one or both of the first metal layer and the second metal layer; and bonding the first metal layer and the second metal layer in a manner that the first metal layer and the second metal layer face each other, to bond the first wafer and the second wafer.

Abstract: A method for manufacturing an image sensor comprises: forming a trench around a photodiode, wherein the photodiode comprises a first doped region with a first conductivity type dopant formed in a semiconductor substrate with a second conductivity type dopant; forming a covering portion in the trench, the covering portion with the second conductivity type dopant covering at least a portion of a sidewall or a bottom wall of the trench, wherein a doping concentration of the covering portion is higher than a doping concentration of the semiconductor substrate; and diffusing the second conductivity type dopant in the covering portion into the semiconductor substrate so as to form a second doped region with the second conductivity type dopant surrounding the at least a portion of the sidewall or the bottom wall of the trench.

Abstract: One example of a nestable-stackable wider-based disposable container is composed of a plastic-coated paper frustoconical tube having its wider end edge connected continuously to the mouth of a plastic bag whose capacity is larger than the tube size. For storage, let the wide end of one container to receive the narrow end of another container. The plastic bag of the former is forced to push up inwardly and to cleave tightly to the paper side wall, allowing the later to be compactly nested into the former. For usage, one stands a container on its non-tipping wider end, places items in via its upper narrower opening, discards it as a whole unit when done. Other examples are described and shown.

Abstract: An image sensor may include a semiconductor substrate in which a photodiode is formed; a metal interconnection layer located above the semiconductor substrate; and an absorption layer located between the semiconductor substrate and the metal interconnection layer, wherein the absorption layer is configured to absorb light travelling through the semiconductor substrate.

Abstract: A stacked semiconductor device including a first substrate, a first insulating layer located on the first substrate, a second insulating layer located on the first insulating layer, a second substrate located on the second insulating layer, an external connection via extending through the second substrate in a first direction perpendicular to an upper surface of the second substrate and exposing an external connection pad, the external connection pad being located in the first insulating layer or the second insulating layer, and a protective ring formed in the second insulating layer and arranged to at least partially surround a sidewall of the external connection via with the first direction as an axial direction, but not to be exposed from the sidewall of the external connection via.

Abstract: An image sensor comprising a semiconductor substrate and a trench isolation structure that is formed in the semiconductor substrate, wherein the trench isolation structure sequentially includes, from an outer portion to an inner portion of the trench isolation structure, a first oxide layer, a nitride layer, a second oxide layer and a semiconductor material layer that respectively extend in a thickness direction of the semiconductor substrate, such that a semiconductor-oxide-nitride-oxide-semiconductor structure is formed from the semiconductor substrate to the inner portion of the trench isolation structure via the outer portion of the trench isolation structure.

Abstract: An image sensor comprises a pixel array, wherein at least one pixel cell in the pixel array comprises an imaging photosensitive element configured to convert a portion of incident light into charges for an image signal, and first and second phase detection photosensitive elements arranged side by side at one side of the imaging photosensitive element opposite to a light incident side and configured to convert light penetrating the imaging photosensitive element into charges for first and second phase detection signals respectively, wherein the first and second phase detection signals are used for focus detection.

Abstract: An example easy change mattress sheet attachment system includes a bed sheet having four sewn-on fabric casings in an arch shape and a cord inserted through the casings forming a set of accessible sections of drawstring at exposed between-casing cord regions at four corners, and a bottom mat having means for trapping drawstrings at four corners. After having installed the bottom mat under the mattress, one can install and remove the top sheet onto and from the mattress without having to lift up the mattress. To install the top sheet, first put the top sheet on the mattress, then execute drawstring-trapping maneuvers at four bed corners. To remove the top sheet, detach the engaged drawstrings at four bed corners.

Abstract: The disclosure discloses a method of forming a double-layer color filter device and the structure of the color filter in an image sensor. The method includes: providing a photosensitive unit on a substrate; forming a first color filter layer on the photosensitive unit; etching the first color filter layer, to form a first filter having a first convex contour; and forming a second color filter layer on the first convex contour of the first filter, and etching the second color filter layer, to form a second filter having a second convex contour.

Abstract: The present disclosure relates to an image sensor and a method of forming the same, and an image forming device. An image sensor includes: a substrate in which a photosensitive element region is formed; and a first light concentrating portion formed in a peripheral region of the photosensitive element region, wherein the first light concentrating portion is formed such that to the light entering the peripheral region of the photosensitive element is refracted toward the photosensitive element region through the light concentrating portion. The image sensor and method for forming an image sensor of the present disclosure allow more light to enter the area of the photosensitive element in the substrate, thereby improving the light sensitivity of the image sensor.

Abstract: A method of manufacturing a semiconductor device comprises: providing a stacked structure comprising a first wafer that includes a first substrate, a first insulating layer and a first electrical connector and a second wafer that includes a second substrate, a second insulating layer and a second electrical connector; forming a first portion of a TSV which overlaps at least part of the first and second electrical connectors and exposes a part of a surface of the first insulating layer; forming an insulating film that at least covers side surfaces and a bottom surface of the first portion; forming a first conductive barrier film retained on the side surfaces of the first portion; forming a second portion of the TSV that exposes the first and second electrical connectors; forming a conductive plug in the first and second portions, to interconnect the first and second electrical connectors.

Abstract: A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprises a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side; and a reflector disposed at the second side of the semiconductor substrate, wherein the reflector is configured to reflect incident light that transmits through the semiconductor substrate back into the semiconductor substrate.

Abstract: The present disclosure relates to an image sensor comprising: a photodiode; a color filter located above the photodiode; and a converging lens located between the photodiode and the color filter, wherein the converging lens is configured to converge light onto the photodiode. The image sensor can make the configuration of the image sensor more compact while preventing crosstalk of light between pixel cells.

Abstract: An image sensor may include a semiconductor substrate in which a photodiode is formed; a metal interconnection layer located above the semiconductor substrate; and an absorption layer located between the semiconductor substrate and the metal interconnection layer, wherein the absorption layer is configured to absorb light travelling through the semiconductor substrate.

Abstract: The present disclosure provides an image sensor, and a forming method and a working method thereof. The image sensor includes: a substrate, provided with a well region part of the well region having a photoelectric doped region, the well region including a second region, a first region and a third region located on two sides of the second region, the first region and the third region being adjacent to the two sides of the second region respectively; a first gate structure, located on a surface of the second region of the well region; a second gate structure, located on a surface of the first region of the well region; and a floating diffusion region, located in the third region of the well region, the floating diffusion region being adjacent to the first gate structure. The image sensor can reduce an image lag while increasing the full well capacity.

Abstract: A semiconductor device comprises an array of photosensitive elements and a grid. The grid is arranged on the array of photosensitive elements, defines an opening for receiving light respectively for each photosensitive element, and optically isolates each photosensitive element from its adjacent photosensitive elements. The grid may comprise an optical isolation portion and a dielectric portion above the optical isolation portion, wherein the dielectric portion defines a sidewall tilted at an angle toward an outer side of the opening. Methods of manufacturing semiconductor devices are also disclosed.