Patents by Inventor Xiaolu Kou

Xiaolu Kou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single-grain near-field transducer and process for forming same
    Patent number: 11935567
    Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.
    Type: Grant
    Filed: July 29, 2022
    Date of Patent: March 19, 2024
    Assignee: Seagate Technology LLC
    Inventors: Michael Christopher Kautzky, Tong Zhao, Li Wan, Xiaolu Kou
  • SINGLE-GRAIN NEAR-FIELD TRANSDUCER AND PROCESS FOR FORMING SAME
    Publication number: 20220366934
    Abstract: A method comprises forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a carrier wafer. The method comprises forming a first bonding layer on the single-crystal-like metal layer. The method also comprises forming a second bonding layer on a dielectric layer of a target substrate, the target substrate comprising one or more recording head subassemblies. The bonding layers may include diffusion layers or dielectric bonding layers. The method further comprises flipping and joining the carrier wafer with the target substrate such that the first and second diffusion layers are bonded and the single-crystal-like metal layer is integrated with the recording head as a near-field transducer.
    Type: Application
    Filed: July 29, 2022
    Publication date: November 17, 2022
    Inventors: Michael Christopher Kautzky, Tong Zhao, Li Wan, Xiaolu Kou
  • Processing for forming single-grain near-field transducer
    Patent number: 11423928
    Abstract: A method includes forming a single-crystal-like metal layer on a metal seed layer, the metal seed layer formed on a sacrificial wafer. An anchor layer is formed on the single-crystal-like metal layer. The single-crystal-like metal layer is separated from the sacrificial wafer via the anchor layer. The single-crystal-like metal layer is transported via the anchor layer to a target substrate having one or more recording head subassemblies. The single-crystal-like metal layer is joined with the recording head, the single-crystal-like metal layer being integrated with the recording head as a near-field transducer.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: August 23, 2022
    Assignee: Seagate Technology LLC
    Inventors: Michael Christopher Kautzky, Tong Zhao, Li Wan, Xiaolu Kou